MITSUBISHI Nch POWER MOSFET FS3SM-14A HIGH-SPEED SWITCHING USE FS3SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 700V ¡rDS (ON) (MAX) .............................................................. 4.75Ω ¡ID ............................................................................................ 3A e TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Conditions Drain-source voltage VGS = 0V Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature VDS = 0V Storage temperature Weight Typical value Ratings Unit 700 ±30 V V 3 9 85 A A W –55 ~ +150 –55 ~ +150 4.8 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS3SM-14A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50Ω IS = 1.5A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 700 ±30 — — — — — — ±10 V V µA — 2 — — — 3 3.65 5.48 1 4 4.75 7.13 mA V Ω V 1.4 — — — 2.4 460 50 9 — — — — S pF pF pF — — — — 12 15 52 22 — — — — ns ns ns ns — 1.0 1.5 V — — 1.47 °C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 80 60 40 20 0 0 50 100 150 101 7 5 3 2 tw = 10ms 100ms 100 7 5 3 2 1ms DC 10–1 7 5 3 2 10ms 100ms TC = 25°C Single Pulse 10–2 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 2.0 TC = 25°C Pulse Test 8 VGS = 20V 6 10V 4 5V PD = 85W 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 TC = 25°C Pulse Test VGS = 20V 10V 5V 1.6 4.5V 1.2 0.8 4V 0.4 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3SM-14A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 10 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 ID = 6A 30 20 3A 10 TC = 25°C Pulse Test 8 VGS = 10V 6 20V 4 2 1A 0 4 8 12 DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 101 7 5 TC = 25°C VDS = 50V Pulse Test 8 6 4 2 0 VDS = 10V Pulse Test TC = 25°C 3 75°C 2 125°C 100 7 5 3 2 0 4 8 12 16 10–1 –1 10 20 2 3 5 7 100 5 7 101 2 3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 103 7 5 Ciss 102 7 5 3 2 Coss 101 7 5 3 Tch = 25°C 2 f = 1MHZ 100 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) 10 CAPACITANCE Ciss, Coss, Crss (pF) 16 Crss VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 0 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 3 2 102 7 5 td(off) 3 tf 2 101 10–1 tr td(on) 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3SM-14A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 250V 12 400V 600V 8 4 0 4 8 12 16 75°C 4 25°C 2 0 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C 6 GATE CHARGE Qg (nC) 101 7 5 10–1 VGS = 0V Pulse Test 8 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 10 Tch = 25°C ID = 3A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 100 0.5 7 5 0.2 3 0.1 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999