To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 250V ¡rDS (ON) (MAX) ............................................................ 0.086Ω ¡ID .......................................................................................... 40A e TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 250 ±30 V V 40 120 275 A A W –55 ~ +150 –55 ~ +150 4.8 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 20A, VGS = 10V ID = 20A, VGS = 10V ID = 20A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 20A, VGS = 10V, RGEN = RGS = 50Ω IS = 20A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 250 ±30 — — — — — — ±10 V V µA — 2 — — — 3 0.066 1.32 1 4 0.086 1.72 mA V Ω V 12.0 — — — 18.0 2850 580 110 — — — — S pF pF pF — — — — 45 125 310 140 — — — — ns ns ns ns — 1.5 2.0 V — — 0.45 °C/W PERFORMANCE CURVES 250 200 150 100 50 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 300 0 50 100 150 200 tw=10µs 102 7 5 3 2 100µs 1ms 101 7 5 3 2 100 7 5 3 10ms 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 50 10V 7V 6V 40 30 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 20 10V PD = 275W 6V 5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) CASE TEMPERATURE TC (°C) PD = 275W TC = 25°C Pulse Test 5V 20 10 0 4V 0 10 20 30 40 100ms DC TC = 25°C Single Pulse 50 DRAIN-SOURCE VOLTAGE VDS (V) 16 TC = 25°C Pulse Test 12 4.5V 8 4 0 4V 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 8 6 ID = 60A 4 40A 2 0 20A 0 4 8 12 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 0.02 102 7 5 8 4 8 12 16 VDS = 10V Pulse Test 3 2 TC = 25°C 75°C 125°C 101 7 5 3 2 100 0 10 20 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 5 Ciss Coss 3 2 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 0.04 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 16 102 7 5 0.06 TRANSFER CHARACTERISTICS (TYPICAL) 24 103 7 5 20V DRAIN CURRENT ID (A) 32 3 2 0.08 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 50V Pulse Test 0 VGS = 10V 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 0 TC = 25°C Pulse Test 0.10 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 10 td(off) 3 2 tf 102 7 5 tr td(on) 3 2 101 100 2 3 Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VDS = 50V 100V 12 200V 8 4 101 7 5 0 40 80 120 160 25°C 30 75°C 20 10 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 40 GATE CHARGE Qg (nC) 3 2 10–1 VGS = 0V Pulse Test TC=125°C 0 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 50 Tch = 25°C ID = 40A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 10–1 7 0.1 5 3 2 PDM tw T 0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999