Renesas FS50ASJ-03 High-speed switching use Datasheet

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April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS50ASJ-03
HIGH-SPEED SWITCHING USE
FS50ASJ-03
OUTLINE DRAWING
Dimensions in mm
0.5 ± 0.1
1.5 ± 0.2
6.5
5.0 ± 0.2
2.3
2.3
10MAX.
2.3MIN.
1.0
A
0.5 ± 0.2
0.8
2.3
0.9MAX.
1.0MAX.
5.5 ± 0.2
r
q
w
e
wr
¡4V DRIVE
¡VDSS ................................................................................. 30V
¡rDS (ON) (MAX) ............................................................. 19mΩ
¡ID ........................................................................................ 50A
¡Integrated Fast Recovery Diode (TYP.) ............ 60ns
q GATE
w DRAIN
e SOURCE
r DRAIN
q
e
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
30
V
VGSS
ID
Gate-source voltage
Drain current
VDS = 0V
±20
50
V
A
IDM
IDA
Drain current (Pulsed)
Avalanche drain current (Pulsed)
200
50
A
A
IS
ISM
Source current
Source current (Pulsed)
50
200
A
A
PD
Tch
Maximum power dissipation
Channel temperature
35
–55 ~ +150
W
°C
–55 ~ +150
°C
0.26
g
Tstg
—
Parameter
Conditions
L = 30µH
Storage temperature
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
rDS (ON)
VDS (ON)
Drain-source on-state resistance
Drain-source on-state voltage
y fs
Ciss
Forward transfer admittance
Input capacitance
Coss
Crss
Output capacitance
Reverse transfer capacitance
td (on)
tr
Turn-on delay time
Rise time
td (off)
Turn-off delay time
tf
VSD
Fall time
Source-drain voltage
Rth (ch-c)
trr
Thermal resistance
Reverse recovery time
Limits
Test conditions
Unit
Min.
Typ.
Max.
30
—
—
—
—
±0.1
V
µA
—
1.0
—
1.5
0.1
2.0
mA
V
—
15
19
mΩ
—
—
21
0.375
35
0.475
mΩ
V
—
—
28
1600
—
—
S
pF
—
—
500
260
—
—
pF
pF
—
—
17
90
—
—
ns
ns
—
130
—
ns
—
—
125
1.0
—
1.5
ns
V
—
—
—
60
3.57
—
°C/W
ns
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 4V
ID = 25A, VGS = 10V
ID = 25A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, I D = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V
Channel to case
IS = 25A, dis/dt = –50A/µs
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
40
30
20
10
0
0
100
50
100
150
200
102
7
5
3
2
tw = 10ms
100ms
101
1ms
7
5
3
2
100
7
5
3
10ms
TC = 25°C
Single Pulse
DC
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
PD = 35W
VGS = 10V
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
3
2
50
TC = 25°C
Pulse Test
80
5V
60
4V
40
3V
20
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
TC = 25°C
Pulse Test
40
5V
4V
VGS = 10V
6V
30
3V
20
PD = 35W
10
2V
2V
0
0
1.0
2.0
3.0
4.0
5.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50ASJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
TC = 25°C
Pulse Test
4.0
3.0
2.0
ID = 80A
1.0
50A
50
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
5.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
TC = 25°C
Pulse Test
40
VGS = 4V
30
20
10V
10
30A
0
2
4
6
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
TC = 25°C
VDS = 10V
Pulse Test
80
60
40
20
0
0
2
4
6
102
7
5
3
2
VDS = 10V
Pulse Test
TC = 25°C
2
75°C
125°C
101
7
5
4
3
8
100 0
10
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
Tch = 25°C
f = 1MHZ
VGS = 0V
104
103
7
5
3
2
102
7
5
4
3
2
2
7
5
3
2
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
10
GATE-SOURCE VOLTAGE VGS (V)
100
CAPACITANCE
Ciss, Coss, Crss (pF)
8
Ciss
Coss
Crss
SWITCHING TIME (ns)
0
103
7
5
4
3
2
102
7
5
4
3
2
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
Tch = 25°C
VDD = 15V
VGS = 10V
RGEN = RGS = 50Ω
101 0
10
td(off)
tf
tr
td(on)
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50ASJ-03
HIGH-SPEED SWITCHING USE
10
SOURCE CURRENT IS (A)
6
VDS = 10V
20V
4
25V
2
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
2
100
7
5
4
3
2
–50
0
50
100
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
TC = 125°C
75°C
25°C
25
0
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
75
50
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
100
Tch = 25°C
ID = 50A
8
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= tw
T
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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