Renesas FS5AS-2 High-speed switching use nch power mos fet Datasheet

FS5AS-2
High-Speed Switching Use
Nch Power MOS FET
REJ03G0243-0200
Rev.2.00
Nov 21, 2006
Features
•
•
•
•
•
Drive voltage : 10 V
VDSS : 100 V
rDS(ON) (max) : 0.47 Ω
ID : 5 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
2, 4
4
1.
2.
3.
4.
1
12
3
Gate
Drain
Source
Drain
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Symbol
VDSS
VGSS
ID
IDM
IDA
Ratings
100
±20
5
20
5
Unit
V
V
A
A
A
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
IS
ISM
PD
Tch
Tstg
—
5
20
20
– 55 to +150
– 55 to +150
0.32
A
A
W
°C
°C
g
Rev.2.00
Nov 21, 2006
page 1 of 6
Conditions
VGS = 0 V
VDS = 0 V
L = 100 µH
Typical value
FS5AS-2
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Rev.2.00
Nov 21, 2006
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
page 2 of 6
Min.
100
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
3.0
0.33
0.66
4.0
280
75
18
15
8
17
7
1.0
—
80
Max.
—
±0.1
0.1
4.0
0.47
0.94
—
—
—
—
—
—
—
—
1.5
6.25
—
Unit
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test conditions
ID = 1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V
ID = 2 A, VGS = 10 V
ID = 2 A, VDS = 5 V
VDS = 10 V, VGS = 0 V,
f = 1MHz
VDD = 50 V, ID = 2 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 2 A, VGS = 0 V
Channel to case
IS = 5 A, dis/dt = –100 A/µs
FS5AS-2
Performance Curves
Maximum Safe Operating Area
40
3
2
Drain Current ID (A)
32
24
16
8
0
0
Drain Current ID (A)
10
50
100
150
101
7
5
3
2
tw = 10µs
100µs
100
7
5
3
2
1ms
10ms
DC
10–1
7 Tc = 25°C
5 Single Pulse
3
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
200
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Output Characteristics (Typical)
5.0
PD = 20W VGS = 20V
10V
Tc = 25°C
Pulse Test
8V
6V
8
6
4
5V
2
Drain Current ID (A)
Drain Power Dissipation PD (W)
Drain Power Dissipation Derating Curve
4.0
VGS = 20V
10V
6V
8V
3.0
5V
2.0
1.0
Tc = 25°C
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
0.8
1.2
1.6
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
Tc = 25°C
Pulse Test
4.0
ID = 8A
3.0
2.0
5A
1.0
2A
0
0.4
Drain-Source Voltage VDS (V)
5.0
0
0
Drain-Source Voltage VDS (V)
4
8
12
16
Gate-Source Voltage VGS (V)
Rev.2.00
4V
0
Nov 21, 2006
page 3 of 6
20
Drain-Source On-State Resistance rDS(ON) (Ω)
Drain-Source On-State Voltage VDS(ON) (V)
0
2.0
0.5
Tc = 25°C
Pulse Test
0.4
VGS = 10V
0.3
20V
0.2
0.1
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Drain Current ID (A)
FS5AS-2
Forward Transfer Admittance vs.
Drain Current (Typical)
8
6
4
2
0
Capacitance (pF)
Tc = 25°C
VDS = 10V
Pulse Test
0
4
8
12
16
20
75°C
100
7
5
4
3
125°C
2
VDS = 5V
Pulse Test
10–1 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Capacitance vs.
Drain-Source Voltage (Typical)
Switching Characteristics (Typical)
103
7
5
3
2
2
Ciss
102
7
5
3
2
Coss
101
Crss
7
5
3 Tch = 25°C
2 f = 1MHz
VGS = 0V
100
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
102
7
5
Tch = 25°C
VDD = 50V
VGS = 10V
RGDN = RGS = 50Ω
tf
td(off)
3
2
td(on)
101
7
5
tr
3
2
10–1
2 3 4 5 7 100
2 3 4 5 7 101
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
20
Tch = 25°C
ID = 5A
VGS = 0V
Pulse Test
Source Current IS (A)
Gate-Source Voltage VGS (V)
Tc = 25°C
2
Drain Current ID (A)
20
16
VDS = 20V
12
50V
80V
8
4
0
0
4
8
12
16
Gate Charge Qg (nC)
Rev.2.00
101
7
5
4
3
Gate-Source Voltage VGS (V)
Switching Time (ns)
Drain Current ID (A)
10
Forward Transfer Admittance | yfs | (S)
Transfer Characteristics (Typical)
Nov 21, 2006
page 4 of 6
20
16
12
Tc = 125°C
8
75°C
25°C
4
0
0
0.4
0.8
1.2
1.6
Source-Drain Voltage VSD (V)
2.0
Gate-Source Threshold Voltage VGS(th) (V)
101
7 VGS = 10V
I = 1/2 ID
5 D
4 Pulse Test
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
100
150
Breakdown Voltage vs.
Channel Temperature (Typical)
Transient Thermal Impedance Characteristics
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
102
7
5
3
2
101
7 D = 1.0
5 0.5
3 0.2
2
PDM
100
7
5
3
2
0.1
0.05
0.02
0.01
Single Pulse
tw
D=
T
tw
T
10–1 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RGEN
RL
Vin
Vout
10%
10%
10%
VDD
RGS
90%
td(on)
Rev.2.00
50
Channel Temperature Tch (°C)
1.4
0.4
Threshold Voltage vs.
Channel Temperature (Typical)
Channel Temperature Tch (°C)
Transient Thermal Impedance Zth(ch–c) (°C/W)
Drain-Source On-State Resistance rDS(ON) (25°C)
On-State Resistance vs.
Channel Temperature (Typical)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
FS5AS-2
Nov 21, 2006
page 5 of 6
tr
90%
td(off)
tf
FS5AS-2
Package Dimensions
Previous Code

0.76 ± 0.2
Unit: mm
2.3
0.5 ± 0.2
0.1 ± 0.1
2.5Min
1Max
6.1 ± 0.2
6.6
5.3 ± 0.2
MASS[Typ.]
0.32g
1.4 ± 0.2
RENESAS Code
PRSS0004ZA-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.76
0.5 ± 0.2
1
2.3
2.3 ± 0.2
Order Code
Lead form
Surface-mounted type
Surface-mounted type
Standard packing
Taping
Quantity
3000
Standard order code
Type name – T +Direction (1 or 2) +3
75 Type name
Plastic Magazine
(Tube)
Note : Please confirm the specification about the shipping in detail.
Rev.2.00
Nov 21, 2006
page 6 of 6
Standard order
code example
FS5AS-2-T13
FS5AS-2
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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