Powerex Power FS5SM-18A Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS5SM-18A
HIGH-SPEED SWITCHING USE
FS5SM-18A
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
5.0
r
4
2
20.0
φ 3.2
2
19.5MIN.
4.4
1.0
q
w
5.45
e
5.45
0.6
2.8
4
wr
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 900V
¡rDS (ON) (MAX) ................................................................ 2.8Ω
¡ID ............................................................................................ 5A
e
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
(Tc = 25°C)
Parameter
Conditions
Drain-source voltage
VGS = 0V
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
VDS = 0V
Storage temperature
Weight
Typical value
Ratings
Unit
900
±30
V
V
5
15
125
A
A
W
–55 ~ +150
–55 ~ +150
4.8
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5SM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
Gate-source threshold voltage
Drain-source on-state resistance
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 10V
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 2A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 2A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
Typ.
Max.
900
±30
—
—
—
—
—
—
±10
V
V
µA
—
2
—
—
—
3
2.15
4.30
1
4
2.80
5.60
mA
V
Ω
V
3.0
—
—
—
5.0
1050
100
20
—
—
—
—
S
pF
pF
pF
—
—
—
—
20
18
110
35
—
—
—
—
ns
ns
ns
ns
—
1.0
1.5
V
—
—
1.0
°C/W
PERFORMANCE CURVES
160
120
80
40
0
MAXIMUM SAFE OPERATING AREA
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
200
0
50
100
150
200
101
7
5
3
2
tw = 10ms
100
7
5
3
2
1ms
10–1
7
5
3
100ms
10ms
3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
5
VGS = 20V 10V
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
TC = 25°C
Pulse Test
16
PD = 125W
VGS = 20V
12
10V
8
5V
4
0
10
20
30
40
5V
4
TC = 25°C
Pulse Test
3
2
4.5V
1
4V
4V
0
100ms
DC
TC = 25°C
Single Pulse
50
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5SM-18A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5
TC = 25°C
Pulse Test
40
ID = 10A
30
20
5A
10
2A
0
0
4
8
12
3
2
1
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
5
TC = 25°C
VDS = 50V
Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)
8
4
TC = 25°C
75°C
3
2
125°C
100
7
5
VDS = 10V
Pulse Test
3
2
0
4
8
12
16
10–1 –1
10
20
2 3
5 7 100
2 3
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
3
2
7
5
3
2
102
7
5
3
2
Coss
Tch = 25°C
Crss
7 f = 1MHZ
5 VGS = 0V
3
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
Ciss
103
CAPACITANCE
Ciss, Coss, Crss (pF)
20V
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
12
101
VGS = 10V
4
DRAIN CURRENT ID (A)
16
0
TC = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
DRAIN CURRENT ID (A)
16
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
50
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
3
2
102
7
5
td(off)
tf
3
tr
td(on)
2
101 –1
10
2 3
5 7 100
2 3
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5SM-18A
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
VDS = 250V
400V
600V
12
8
4
0
10
20
30
40
12
8
4
0
0
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
–50
0
50
100
3.0
2.0
1.0
0
150
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VDS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
CHANNEL TEMPERATURE Tch (°C)
0.4
TC = 125°C
75°C
25°C
GATE CHARGE Qg (nC)
101
7
5
10–1
VGS = 0V
Pulse Test
16
50
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
20
Tch = 25°C
ID = 7A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
D = 1.0
100
7 0.5
5
3 0.2
2 0.1
10–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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