MITSUBISHI Nch POWER MOSFET FS5UMH-2 HIGH-SPEED SWITCHING USE FS5UMH-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. D 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. f 3.6 q w e wr ¡2.5V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 0.44Ω ¡ID ............................................................................................ 5A ¡Integrated Fast Recovery Diode (TYP.) ............. 80ns q GATE w DRAIN e SOURCE r DRAIN q e TO-220 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 100 V VGSS ID Gate-source voltage Drain current VDS = 0V ±10 5 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 20 5 A A IS ISM Source current Source current (Pulsed) 5 20 A A PD T ch Maximum power dissipation Channel temperature 20 –55 ~ +150 W °C –55 ~ +150 °C 2.0 g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FS5UMH-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 4V ID = 2A, VGS = 2.5V ID = 2A, VGS = 4V ID = 2A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, ID = 2A, VGS = 4V, RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = –100A/µs Unit Min. Typ. Max. 100 — — — — ±0.1 V µA — 0.6 — 0.9 0.1 1.2 mA V — 0.32 0.44 Ω — — 0.34 0.64 0.47 0.88 Ω V — — 10 540 — — S pF — — 75 20 — — pF pF — — 12 18 — — ns ns — 45 — ns — — 26 1.0 — 1.5 ns V — — — 80 6.25 — °C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 32 24 16 8 0 0 DRAIN CURRENT ID (A) 50 100 150 200 100ms 100 7 5 3 2 10–1 7 5 3 2 1ms 10ms DC TC = 25°C Single Pulse 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) Tc = 25°C Pulse Test 2V 6 4 2 1.5V 1.0 VGS = 5V 4V 3V 2.5V 5.0 Tc = 25°C Pulse Test 2.5V PD = 20W 8 0 tw = 10ms 101 7 5 3 2 CASE TEMPERATURE TC (°C) VGS = 5V 4V 3V 10 0 MAXIMUM SAFE OPERATING AREA 5 3 2 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 40 2V 4.0 3.0 2.0 1.5V 1.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5UMH-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 4.0 ID = 8A 3.0 2.0 5A 1.0 0 2A 0 1.0 2.0 3.0 4V 0.4 0.2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 Tc = 25°C VDS = 10V Pulse Test 4 2 VDS = 5V Pulse Test 3 2 TC = 25°C 75°C 125°C 101 7 5 3 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 5 7 101 5 7 102 2 3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 Ciss 102 Coss Crss 101 7 Tch = 25°C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 103 CAPACITANCE Ciss, Coss, Crss (pF) VGS = 2.5V TRANSFER CHARACTERISTICS (TYPICAL) 6 7 5 3 2 0.6 DRAIN CURRENT ID (A) 8 7 5 3 2 0.8 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 5.0 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 4.0 Tc = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 0 1.0 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 3 2 102 7 5 3 2 td(off) tf tr 101 7 5 3 2 100 -1 10 td(on) Tch = 25°C VDD = 50V VGS = 4V RGEN = RGS = 50Ω 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5UMH-2 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) VDS = 20V 3.0 50V 80V 2.0 1.0 0 2 4 6 8 TC = 125°C 12 75°C 4 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 25°C 8 0 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 16 10 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 Tch = 25°C ID = 5A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 0.5 3 2 0.2 100 7 5 3 2 PDM 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999