Fairchild FS6M12653RTCYDT Fairchild power switch(fps) Datasheet

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FS6M12653RTC
Fairchild Power Switch(FPS)
Features
Description
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The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shut down protection, over
voltage protection, and temperature compensated precision
current sources for loop compensation and fault protection
circuitry. compared to discrete MOSFET and controller or
RCC switching converter solution, a Fairchild Power
Switch(FPS) can reduce total component count, design size,
and weight and at the same time increase efficiency,
productivity, and system reliability. It has a basic platform
well suited for cost effective LCD monitor power supply.
Fixed Frequency
Internal Burst Mode Controller for Stand-by Mode
Pulse By Pulse Over Current Limiting
Over Current Protection(Auto Restart Mode)
Over Voltage Protection (Auto Restart Mode)
Over Load Protection(Auto Restart Mode)
Internal Thermal Shutdown Function(Latch Mode)
Under Voltage Lockout
Internal High Voltage Sense FET
Soft Start
TO-220F-5L
1
1. Drain 2. GND 3. VCC
4. Feedback 5. SoftStart
Internal Block Diagram
Vref
SoftStart
Internal
Bias
OSC
5
Drain
3
1
Vref
Vref
UVLO
Burst mode
controller
Vfb
Vth=1V
VCC
S
Ron
Q
R
Vcc
Vth=11V/12V
Roff
PWM
Feedbock
4
2.5R
R
Ifb
Vref
Vfb Offset
Vcc
Rsenese
Idelay
OCL
OLP
Filter
(130nsec)
Vth=2V
Vth=7.5V
S
Vcc
Vth=33V
OVP
UVLO Reset
(Vcc=9V)
R
Q
Q
S
R
2 GND
TSD
Power-on
Reset
(Vcc=6.5V)
(Tj=160 ℃)
Rev.1.0.3
©2003 Fairchild Semiconductor Corporation
FS6M12653RTC
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
VDGR
650
V
VGS
±30
V
IDM
21.2
ADC
Continuous Drain Current (Tc = 25°C)
ID
5.3
ADC
Continuous Drain Current (TC=100°C)
ID
3.4
ADC
IAS(EAS)
27(960)
A(mJ)
VCC, MAX
35
V
VFB
-0.3 to VCC
V
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(1)
(3)
Single Pulsed Avalanche Current (Energy
Maximum Supply Voltage
Input Voltage Range
(2)
)
VSS
-0.3 to 10
V
PD(Watt H/S)
50
W
Darting
0.4
W/°C
Operating Junction Temperature
Tj
+150
°C
Operating Ambient Temperature
TA
-25 to +85
°C
TSTG
-55 to +150
°C
Total Power Dissipation
Storage Temperature Range
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=81mH, starting Tj=25°C
3. L=13uH, starting Tj=25°C
2
FS6M12653RTC
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
Static Drain-Source On Resistance (1)
Forward Transconductance
(2)
Min.
Typ.
VGS=0V, ID=250µA
650
-
-
V
VDS=650V, VGS=0V
-
-
200
µA
IDSS
VDS=520V
VGS=0V, TC=125°C
-
-
300
µA
RDS(ON)
VGS=10V, ID=1.8A
-
0.73
0.9
Ω
gfs
VDS=50V, ID=1.8A
-
-
-
S
-
1820
-
VGS =0V, VDS=25V,
f = 1MHz
-
185
-
-
32
-
-
38
-
-
120
-
-
200
-
-
100
-
-
60
-
-
10
-
-
30
-
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn On Delay Time
td(on)
Rise Time
Turn Off Delay Time
Fall Time
tr
td(off)
tf
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge
Qgs
Gate-Drain (Miller) Charge
Qgd
Condition
VDD=325V, ID=6.5A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=6.5A,
VDS=520V (MOSFET
Switching time are
Essentially independent of
Operating temperature)
Max.
Unit
pF
nS
nC
Note:
1. Pulse test : Pulse width ≤ 300µS, duty 2%
1
2. S = ---R
3
FS6M12653RTC
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
UVLO SECTION
Start Threshold Voltage
VSTART
VFB = GND
14
15
16
V
Stop Threshold Voltage
VSTOP
VFB = GND
8
9
10
V
63
70
77
kHz
OSCILLATOR SECTION
Initial Frequency
FOSC
Voltage Stability
FSTABLE
12V ≤ VCC ≤ 23V
0
1
3
%
Temperature Stability (2)
∆FOSC
-25°C ≤ Ta ≤ 85°C
0
±5
±10
%
Maximum Duty Cycle
DMAX
-
75
80
85
%
Minimum Duty Cycle
DMIN
-
-
-
0
%
-
FEEDBACK SECTION
Feedback Source Current
IFB
VFB = GND
0.7
0.9
1.1
mA
Shutdown Feedback Voltage
VSD
VFB ≥ 6.9V
6.9
7.5
8.1
V
VFB = 5V
3.2
4.0
4.8
µA
Shutdown Delay Current
IDELAY
SOFTSTART SECTION
Softstart Voltage
VSS
VFB = 2
4.7
5.0
5.3
V
Softstart Current
ISS
VSS = V
0.8
1.0
1.2
mA
Burst Mode Low Threshold Voltage
VBURL
VFB = 0V
10.4
11.0
11.6
V
Burst Mode High Threshold Voltage
VBURH
VFB = 0V
11.4
12.0
12.6
V
VCC = 10.5V
0.7
1.0
1.3
V
IBURPK
VCC = 10.5V, VFB = 0V
0.46
0.6
0.74
A
FBUR
VCC = 10.5V, VFB = 0V
63
70
77
kHz
2.82
3.2
3.58
A
29
33
37
V
BURST MODE SECTION
Burst Mode Enable Feedback Voltage
Burst Mode Peak Current Limit (4)
Burst Mode Frequency
VBEN
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit (4)
IOVER
-
PROTECTION SECTION
VCC ≥ 29V
Over Voltage Protection
VOVP
Over Current Latch Voltage (3)
VOCL
-
1.8
2.0
2.2
V
TSD
-
140
160
-
°C
-
0.1
0.17
mA
-
10
15
mA
Thermal Shutdown Temp (2)
TOTAL DEVICE SECTION
Start Up Current
Operating Supply Current (1)
ISTART
VFB = GND, VCC = 14V
IOP
VFB = GND, VCC = 16V
IOP(MIN)
VFB = GND, VCC = 12V
IOP(MAX)
VFB = GND, VCC = 30V
Notes:
1. These parameters are the current flowing in the Control IC.
2. These parameters, although guaranteed at the design, are not 100% tested in production.
3. These parameters, although guaranteed, are tested in EDS(wafer test) process.
4. These parameters indicate Inductor current.
4
FS6M12653RTC
Typical Performance Characteristics
Start Up Current vs. Temp
0.150 [mA]
Operating Current vs. Temp
[mA]
11.0
0.125
10.5
0.100
10.0
0.075
9.5
0.050
-25
0
25
50
75
100
125
150
9.0
-25
0
25
Temp
10.0
15.5
9.5
15.0
9.0
14.5
8.5
0
25
50
75
100
125
150
[V]
125
150
8.0
-25
Stop Threshold Voltage vs. Temp
0
25
50
75
100
125
150
Temp
Temp
Figure 4. Stop Threshold Voltage vs. Temp
Figure 3. Start Threshold Voltage vs. Temp
[KHz]
100
Figure 2. Operating Current vs. Temp
Start Threshold Voltage vs. Temp
14.0
-25
75
Temp
Figure 1. Start Up Current vs. Temp
16.0 [V]
50
Initial Freqency vs. Temp
81.0
76
Maximum Duty vs. Temp
[%]
74
80.5
72
80.0
70
68
79.5
66
64
-25
0
25
50
75
100
125
Temp
Figure 5. Initial Freqency vs. Temp
150
79.0
-25
0
25
50
75
100
125
150
Temp
Figure 6. Maximum Duty vs. Temp
5
FS6M12653RTC
Typical Performance Characteristics (Continued)
0.45
[V]
Feedback Offset Voltage vs. Temp
1.1
0.40
[mA] Feedback Source Current vs. Temp
1.0
0.35
0.9
0.30
0.8
0.25
0.20
-25
0
25
50
75
100
125
150
0.7
-25
0
25
[uA] ShutDown Delay Current vs. Temp
7.55
4.0
7.50
3.6
7.45
0
25
50
75
100
125
150
7.40
-25
0
25
Softstart Voltage vs. Temp
34.0
5.01
33.5
5.00
33.0
4.99
32.5
4.98
-25
0
25
50
75
100
125
Temp
Figure 11. Softstart Voltage vs. Temp
6
150
50
75
100
125
150
Figure 10. ShutDown Feedback Voltage vs. Temp
Figure 9. ShutDown Delay Current vs. Temp
[V]
125
Temp
Temp
5.02
100
[V] ShutDown Feedback Voltage vs. Temp
7.60
4.4
3.2
-25
75
Figure 8. Feedback Source Current vs. Temp
Figure 7. Feedback Offset Voltage vs. Temp
4.8
50
Temp
Temp
150
[V]
32.0
-25
0
25
50
75
Temp
100
125
Figure 12. Over Voltage Protection vs. Temp
150
FS6M12653RTC
Typical Performance Characteristics (Continued)
[V]
Burst Mode Low Voltage vs. Temp
[V]
11.2
12.2
11.1
12.1
11.0
12.0
10.9
11.9
10.8
-25
0
25
50
75
100
125
150
11.8
-25
Burst Mode High Voltage vs. Temp
0
25
Temp
0.72
0.66
0.66
0.60
0.60
0.54
0.54
50
75
Temp
125
150
[A] Burst Mode Peak Current vs. Temp
[A] Burst Mode Peak Current vs. Temp
25
100
Figure 14. Burst Mode High Voltage vs. Temp
0.72
0
75
Temp
Figure 13. Burst Mode Low Voltage vs. Temp
0.48
-25
50
100
125
Figure 15. Burst Mode Peak Current vs. Temp
150
0.48
-25
0
25
50
75
Temp
100
125
150
Figure 16. Burst Mode Peak Current vs. Temp
7
FS6M12653RTC
Package Dimensions
TO-220F-5L
8
FS6M12653RTC
Package Dimensions (Continued)
TO-220F-5L(Forming)
9
FS6M12653RTC
Ordering Information
Product Number
FS6M12653RTCTU
FS6M12653RTCYDT
Package
Marking Code
BVdss
Rds(on)
TO-220F-5L
6M12653R
C
650V
0.7
TO-220F-5L(Forming)
TU : Non Forming Type
YDT : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
8/25/03 0.0m 001
Stock#DSxxxxxxxx
 2003 Fairchild Semiconductor Corporation
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