Fairchild FS6S1265REYDTU Fairchild power switch(fps) Datasheet

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FS6S1265RE
Fairchild Power Switch(FPS)
Features
Description
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The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, optimized gate turn on/turn off driver,
thermal shut down protection, over voltage protection, and
temperature compensated precision current sources for loop
compensation and fault protection circuitry. compared to
discrete MOSFET and controller or RCC switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, and weight and at the same
time increase efficiency, productivity, and system reliability.
It has a basic platform well suited for cost effective monitor
power supply.
Wide Operating Frequency Range Up to 150kHz
Lowest Cost SMPS Solution
Lowest External Components
Low Start up Current (Max:170uA)
Low Operating Current (Max:15mA)
Internal High Voltage SenseFET
Built-in Auto Restart Circuit
Over Voltage Protection (Auto Restart Mode)
Over Load Protection (Auto Restart Mode)
Over Current Protection (Auto Restart Mode)
Internal Thermal Protection (Auto Restart Mode)
Pulse By Pulse Over Current Limiting
Internal Burst Mode Controller for Stand-by Mode
Under Voltage Lockout With Hysteresis
External Sync. Terminal
TO-3P-5L
1
1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync.
Internal Block Diagram
Vref
SoftStart
& Sync
Vcc
Drain
3
1
Vpp=5.8/7.2V
Internal
Bias
OSC
5
Vref
Vref
UVLO
Burst mode
controller
Vfb
Vth=1V
S
Ron
Q
R
Vcc
Vth=11V/12V
Roff
PWM
Feedback
4
2.5R
R
Ifb
Vref
Vfb Offset
Vcc
Rsenese
Idelay
OCL
OLP
Vth=7.5V
S
Vcc
Vth=30V
OVP
UVLO Reset
(Vcc=9V)
Q
Filter
(130nsec)
Vth=1V
2
GND
TS
D
(Tj=160℃)
R
Rev.1.0.1
©2003 Fairchild Semiconductor Corporation
FS6S1265RE
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Drain-Gate Voltage(RGS=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Symbol
Value
Unit
VDGR
650
V
VGS
±30
V
IDM
48
ADC
Continuous Drain Current (Tc = 25°C)
ID
12
ADC
Continuous Drain Current (Tc = 100°C)
ID
8.4
ADC
Single Pulsed Avalanche Current(3) (Energy (2))
IAS(EAS)
30(950)
A(mJ)
Maximum Supply Voltage
VCC,MAX
35
V
VFB
-0.3 to VCC
V
Input Voltage Range
VSS
-0.3 to 10
V
PD (Watt H/S)
240
W
Darting
1.92
W/°C
Operating Junction Temperature.
TJ
+150
°C
Operating Ambient Temperature.
TA
-25 to +85
°C
TSTG
-55 to +150
°C
Total Power Dissipation
Storage Temperature Range.
Note:
1. Repetitive rating: pulse width limited by maximum junction temperature
2. L = 10mH, starting Tj = 25°C
3. L = 13uH, starting Tj = 25°C
2
FS6S1265RE
Electrical Characteristics (SFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (1)
Transconductance(2)
Forward
Input Capacitance
Min.
Typ.
Max.
Unit
650
-
-
V
VDS=Max, Rating, VGS = 0V
-
-
200
µA
VDS= 0.8Max, Rating,
VGS = 0V, TC = 125°C
-
-
300
µA
RDS(on)
VGS = 10V, ID = 4.5A
-
0.7
0.9
Ω
gfs
VDS = 50V, ID = 4.5A
-
-
-
S
-
1820
-
-
185
-
-
32
-
-
38
-
-
120
-
-
200
-
-
100
-
-
60
-
-
10
-
-
30
-
Coss
Reverse Transfer Capacitance
Crss
Turn on Delay Time
td(on)
Turn Off Delay Time
Fall Time
VGS = 0V, ID = 50µA
Ciss
Output Capacitance
Rise Time
Conditions
tr
td(off)
tf
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge
Qgs
Gate-Drain (Miller) Charge
Qgd
VGS = 0V, VDS = 25V,
f = 1MHz
VDD = 0.5BVDSS, ID = 12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS = 10V, ID = 12.0A,
VDS = 0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
pF
nS
nC
Note:
1. Pulse test: pulse width ≤ 300us, duty 2%
12. S = --R
3
FS6S1265RE
Electrical Characteristics (Control Part) (Continued)
(VCC=16V, Tamb = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
UVLO SECTION
Start Threshold Voltage
VSTART
VFB=GND
14
15
16
V
Stop Threshold Voltage
VSTOP
VFB=GND
8
9
10
V
22
25
28
kHz
OSCILLATOR SECTION
Initial Frequency
FOSC
Voltage Stability
-
FSTABLE
12V ≤ VCC ≤ 23V
0
1
3
%
Temperature Stability (Note2)
∆FOSC
-25°C ≤ Τa ≤ 85°C
0
±5
±10
%
Maximum Duty Cycle
DMAX
-
92
95
98
%
Minimum Duty Cycle
DMIN
-
-
-
0
%
FEEDBACK SECTION
Feedback Source Current
IFB
VFB=GND
0.7
0.9
1.1
mA
Shutdown Feedback Voltage
VSD
VFB ≥ 6.9V
6.9
7.5
8.1
V
IDELAY
VFB=5V
1.6
2.0
2.4
µA
VSS
VFB=2V
4.7
5.0
5.3
V
ISS
VSS=0V
Shutdown Delay Current
SYNC. & SOFTSTART SECTION
Softstart Voltage
0.8
1.0
1.2
mA
Sync High Threshold Voltage(Note3)
VSYNCH
VCC=16V , VFB=5V
-
7.2
-
V
Sync Low Threshold Voltage(Note3)
VSYNCL
VCC=16V , VFB=5V
-
5.8
-
V
Burst Mode Low Threshold Voltage
VBURL
VFB=0V
10.4
11.0
11.6
V
Burst Mode High Threshold Voltage
VBURH
VFB=0V
11.4
12.0
12.6
V
VCC=10.5V
0.7
1.0
1.3
V
0.45
0.6
0.75
A
40
50
60
kHz
7.04
8.0
8.96
A
27
30
33
V
Softstart Current
BURST MODE SECTION
Burst Mode Enable Feedback Voltage
VBEN
Burst Mode Peak Current Limit(Note4)
IBURPK
Burst Mode Freqency
FBUR
VCC=10.5V , VFB=0V
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit (Note4)
IOVER
-
PROTECTION SECTION
VCC ≥ 27V
Over Voltage Protection
VOVP
Over Current Latch voltage(Note3)
VOCL
-
0.9
1.0
1.1
V
TSD
-
140
160
-
°C
-
0.1
0.17
mA
-
10
15
mA
Thermal Shutdown Tempature(Note2)
TOTAL DEVICE SECTION
Start-Up Current
Operating Supply Current(Note1)
ISTART
VFB = GND, VCC = 14V
IOP
VFB = GND, VCC = 16V
IOP(MIN)
VFB = GND, VCC = 12V
IOP(MAX)
VFB = GND, VCC = 30V
Notes:
1. These parameters are the Current Flowing in the Control IC.
2. These parameters, although guaranteed, are not 100% tested in production
3. These parameters, although guaranteed, are tested in EDS(wafer test) process
4. These parameters are indicated Inductor Current.
4
FS6S1265RE
Typical Performance Characteristics
Start Up Current vs. Temp
0.150 [mA]
0.125
10.5
0.100
10.0
0.075
9.5
0.050
-25
0
25
50
75
100 125 150
Figure 1. Start Up Current vs. Temp.
9.0
-25
16.0 [V]
Operating Current vs. Temp
[mA]
11.0
10.0
15.5
9.5
15.0
9.0
14.5
8.5
0
25
50
75
100
125
150
Figure 3. Start Threshold Voltage vs. Temp.
[KHz]
[V]
8.0
-25
50
75
100
125
150
Stop Threshold Voltage vs. Temp
0
25
50
75
100
125
150
Figure 4. Stop Threshold Voltage vs. Temp.
Initial Freqency vs. Temp
96.0
28
25
Figure 2. Operating Current vs. Temp.
Start Threshold Voltage vs. Temp
14.0
-25
0
Maximum Duty vs. Temp
[%]
27
95.5
26
95.0
25
24
94.5
23
22
-25
0
25
50
75
100
125
Figure 5. Initial Frequency vs. Temp.
150
94.0
-25
0
25
50
75
100
125
150
Figure 6. Maximum Duty vs. Temp.
5
FS6S1265RE
Typical Performance Characteristics (Continued)
0.45
[V]
Feedback Offset Voltage vs. Temp
1.1
0.40
[mA] Feedback Source Current vs. Temp
1.0
0.35
0.9
0.30
0.8
0.25
0.20
-25
0
25
50
75
100
125
150
Figure 7. Feedback Offset Voltage vs. Temp.
2.4
[uA]
ShutDown Delay Current vs. Temp
2.0
7.50
1.8
7.45
25
50
75
100
125
150
Figure 9. Shutdown Delay Current vs. Temp.
5.02
7.40
-25
75
100
125
150
0
25
50
75
100
125
150
[V]
OverVoltage Protection vs. Temp
31.0
5.01
30.5
5.00
30.0
4.99
29.5
4.98
-25
50
Figure 10. Shutdown Feedback Voltage vs. Temp.
Softstart Voltage vs. Temp
[V]
25
[V] ShutDown Feedback Voltage vs. Temp
7.60
7.55
0
0
Figure 8. Feedback Source Current vs. Temp.
2.2
1.6
-25
0
25
50
75
100
125
Figure 11. Softstart Voltage vs. Temp.
6
0.7
-25
150
29.0
-25
0
25
50
75
100
125
150
Figure 12. Over Voltage Protection vs. Temp.
FS6S1265RE
Typical Performance Characteristics (Continued)
Burst Mode Low Voltage vs. Temp
[V]
[V]
11.2
12.2
11.1
12.1
11.0
12.0
10.9
11.9
10.8
-25
0
25
50
75
100
125
150
Figure 13. Burst Mode Low Voltage vs. Temp.
Burst Mode Freqency vs. Temp
[KHz]
54
11.8
-25
Burst Mode High Voltage vs. Temp
0
25
50
75
100
125
150
Figure 14. Burst Mode High Voltage vs. Temp.
1.3
[V] Burst ModeEnable Voltage vs. Temp
1.2
52
1.1
1.0
50
0.9
48
0.8
46
-25
0
25
50
75
100
125
150
Figure 15. Burst Mode Frequency vs. Temp.
0.75
[A]
0.7
-25
0
25
50
75
100
125
150
T
Figure 16. Burst Mode Enable
Voltage vs. Temp.
Burst Mode Peak Current vs.Temp
Over Current Limit vs. Temp
[A]
8.2
0.70
8.1
0.65
0.60
8.0
0.55
7.9
0.50
0.45
-25
0
25
50
75
100
125
150
Figure 17. Burst ModeTPeak Current vs. Temp.
7.8
-25
0
25
50
75
100
125
150
Figure 18. Peak Current Limit vs. Temp.
7
FS6S1265RE
Package Dimensions
TO-3P-5L
8
FS6S1265RE
Package Dimensions (Continued)
TO-3P-5L (Forming)
9
FS6S1265RE
Ordering Information
Product Number
FS6S1265RETU
FS6S1265REYDTU
Package
Marking Code
BVdss
Rds(on)
TO-3P-5L
6S1265R
E
650V
0.7Ω
TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
8/25/03 0.0m 001
Stock#DSxxxxxxxx
 2003 Fairchild Semiconductor Corporation
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