MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 (1.5) FS70VSH-03 1 B 5 0.5 q w e wr ¡2.5V DRIVE ¡VDSS .................................................................................. 30V ¡rDS (ON) (MAX) .............................................................. 14mΩ ¡ID ......................................................................................... 70A ¡Integrated Fast Recovery Diode (TYP.) ............. 70ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 30 V VGSS ID Gate-source voltage Drain current VDS = 0V ±10 70 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 280 70 A A IS ISM Source current Source current (Pulsed) 70 280 A A PD T ch Maximum power dissipation Channel temperature 70 –55 ~ +150 W °C –55 ~ +150 °C 1.2 g T stg — Parameter Conditions L = 30µH Storage temperature Weight Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 30 — — — — ±0.1 V µA — 0.6 — 0.9 0.1 1.2 mA V — 10 14 mΩ — — 13 0.35 20 0.49 mΩ V — — 60 4000 — — S pF — — 800 420 — — pF pF — — 50 250 — — ns ns — 350 — ns — — 350 1.0 — 1.5 ns V — — — 70 1.79 — °C/W ns ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 2.5V ID = 35A, VGS = 4V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 35A, VGS = 4V, RGEN = RGS = 50Ω IS = 35A, VGS = 0V Channel to case IS = 35A, dis/dt = –50A/µs PERFORMANCE CURVES 80 60 40 20 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 0 50 100 150 200 102 7 5 3 2 tw = 10ms 101 7 5 3 2 1ms 100 7 5 3 100ms 10ms DC TC = 25°C Single Pulse 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 100 50 4V VGS = 5V VGS = 5V 80 2.5V 60 PD = 70W 2V 40 1.5V 20 2.5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3V 40 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 2V 4V 3V 30 1.5V 20 10 TC = 25°C Pulse Test 0 100ms 0 TC = 25°C Pulse Test 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.2 ID = 100A 0.8 70A 0.4 30A 0 2.0 3.0 4.0 7 5 3 2 103 7 5 3 2 102 7 5 3 2 4 2 3 4 5 7 101 2 3 4 5 7 102 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 20 104 4V 8 TRANSFER CHARACTERISTICS (TYPICAL) 40 2 VGS = 2.5V 12 DRAIN CURRENT ID (A) 60 0 16 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 10V Pulse Test 80 TC = 25°C Pulse Test 0 0 10 5.0 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 100 1.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) 1.6 0 CAPACITANCE Ciss, Coss, Crss (pF) 20 TC = 25°C Pulse Test 102 VDS = 10V 7 Pulse Test 5 4 3 TC = 25°C 2 75°C 101 7 5 4 3 125°C 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C f = 1MHZ VGS = 0V Ciss Coss Crss SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 td(off) tf 2 tr 102 7 5 4 3 td(on) Tch = 25°C VDD = 15V VGS = 4V RGEN = RGS = 50Ω 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE 5 SOURCE CURRENT IS (A) VDS = 15V 3 20V 25V 2 1 0 20 40 60 80 TC = 125°C 75°C 25 25°C 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 50 GATE CHARGE Qg (nC) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 75 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 100 Tch = 25°C ID = 70A 4 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10–1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999