To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS7UM-12 HIGH-SPEED SWITCHING USE FS7UM-12 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) ................................................................. 1.3Ω ¡ID ............................................................................................ 7A e TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 600 ±30 V V 7 21 125 A A W –55 ~ +150 –55 ~ +150 2.0 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS7UM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 600 ±30 — — — — — — ±10 V V µA VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V — 2 — — — 3 1.0 3.0 1 4 1.3 3.9 mA V Ω V 3.0 — — — 5.0 1100 125 17 — — — — S pF pF pF — — — — 30 30 100 35 — — — — ns ns ns ns — 1.5 2.0 V — — 1.0 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω IS = 3A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES 160 120 80 40 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 0 50 100 150 100µs 1ms 100 7 5 3 2 10–1 7 5 200 tw=10µs 101 7 5 3 2 10ms TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 16 TC = 25°C Pulse Test 12 6V 8 4 5V OUTPUT CHARACTERISTICS (TYPICAL) 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 125W 8V 20 DC VGS=20V 10V 8V 8 6V PD = 125W 6 4 5V 2 TC = 25°C Pulse Test 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS7UM-12 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25°C Pulse Test 32 24 ID = 14A 16 10A 7A 8 3A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 0.4 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 8 4 4 8 12 16 TC = 25°C VDS = 10V Pulse Test 3 2 75°C 125°C 100 7 5 3 2 10–1 –1 10 20 2 3 5 7 100 5 7 101 2 3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 2 Ciss 3 2 Coss 3 2 Crss 101 Tch = 25°C f = 1MHz 7 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 0.8 TRANSFER CHARACTERISTICS (TYPICAL) 12 102 7 5 1.2 DRAIN CURRENT ID (A) 16 103 7 5 20V 1.6 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 50V Pulse Test 0 VGS = 10V 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 20 0 TC = 25°C Pulse Test Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 3 2 td(off) 102 7 5 tf 3 2 101 10–1 tr td(on) 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS7UM-12 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 200V 12 400V 8 4 101 7 5 20 40 60 80 75°C 12 8 4 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 25°C GATE CHARGE Qg (nC) 3 2 10–1 16 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) SOURCE CURRENT IS (A) VDS = 100V 0 VGS = 0V Pulse Test TC= 125°C 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) 20 Tch = 25°C ID = 7A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 D=1 0.5 0.2 0.1 PDM tw 0.05 0.02 0.01 T D= tw T Single Pulse 10–2 –4 –3 10 2 3 5710 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999