MITSUBISHI Nch POWER MOSFET FS7UM-16A HIGH-SPEED SWITCHING USE FS7UM-16A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 800V ¡rDS (ON) (MAX) .............................................................. 1.64Ω ¡ID ............................................................................................ 7A e TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Conditions Drain-source voltage VGS = 0V Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature VDS = 0V Storage temperature Weight Typical value Ratings Unit 800 ±30 V V 7 21 150 A A W –55 ~ +150 –55 ~ +150 2 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS7UM-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 800V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω IS = 3A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 800 ±30 — — — — — — ±10 V V µA — 2 — — — 3 1.26 3.78 1 4 1.64 4.92 mA V Ω V 4.2 — — — 7.0 1380 140 28 — — — — S pF pF pF — — — — 25 28 185 46 — — — — ns ns ns ns — 1.0 1.5 V — — 0.83 °C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 160 120 80 40 0 0 50 100 150 200 tw = 10ms 101 7 5 3 2 100ms 100 7 5 3 2 10ms 1ms 100ms DC 10–1 7 TC = 25°C 5 Single Pulse 3 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 VGS = 20V 16 5 TC = 25°C Pulse Test 12 5V 8 PD = 150W 4 VGS = 20V 10V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 10V 4.5V 4 TC = 25°C Pulse Test 3 2 4V 1 3.5V 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS7UM-16A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25°C Pulse Test 40 30 ID = 14A 20 7A 10 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 4.0 3.0 VGS = 10V 2.0 20V 1.0 3A 0 4 8 12 DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 101 7 5 TC = 25°C VDS = 50V Pulse Test 16 12 8 4 0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) 20 CAPACITANCE Ciss, Coss, Crss (pF) 16 TC = 25°C 3 125°C 75°C 2 100 7 5 3 2 0 4 8 12 16 10–1 10–1 20 VDS = 10V Pulse Test 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 Ciss 103 7 5 3 2 102 7 5 Tch = 25°C 3 2 f = 1MHZ Coss Crss SWITCHING TIME (ns) 0 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 3 2 td(off) 102 7 5 tf tr 3 td(on) 2 VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) 101 –1 10 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS7UM-16A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 250V 12 8 400V 600V 4 0 20 40 60 80 TC = 125°C 12 75°C 4 0 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 25°C 8 GATE CHARGE Qg (nC) 101 7 5 10–1 VGS = 0V Pulse Test 16 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 Tch = 25°C ID = 7A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D = 1.0 7 0.5 5 3 0.2 2 0.1 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999