DEC FSDP-103-1B 1 amp fast recovery silicon diode Datasheet

DIOTEC ELECTRONICS CORP.
Data Sheet No. FSDP-103-1B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
1 AMP FAST RECOVERY SILICON DIODES
MECHANICAL SPECIFICATION
FEATURES
SERIES RP100 - RP110
ACTUAL SIZE OF
DO-41 PACKAGE
Low cost
Low leakage
DO - 41
Low forward voltage drop
LL
BD (Dia)
High current capacity
Fast switching for high efficiency
BL
Color Band
Denotes
Cathode
RoHS COMPLIANT
MECHANICAL DATA
LL
Case: JEDEC DO-41, molded epoxy (U/L Flammability Rating 94V-0)
Terminals: Plated axial leads
LD (Dia)
Soldering: Per MIL-STD 202 Method 208 guaranteed
Minimum
In
mm
4.1
Maximum
In
mm
5.2
0.205
0.103
2.6
0.107
2.7
1.00
0.028
25.4
0.71
0.034
0.86
Sym
Polarity: Color band denotes cathode
0.160
BL
Mounting Position: Any
BD
Weight: 0.012 Ounces (0.34 Grams)
LL
LD
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
!
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PARAMETER (TEST CONDITIONS)
RATINGS
SYMBOL
È¡É0Ê#ËQË
Series Number
V FDG
Maximum DC Blocking Voltage
Maximum RMS Voltage
V @$AB
Maximum Peak Recurrent Reverse Voltage
V CDC$E
1
2
Average Forward Rectified Current @ T = 75 C
(Lead length = 0.375 in. (9.5 mm))
Peak Forward Surge Current ( 8.3 mSec single half sine wave
superimposed on rated load)
Æ
ÇDÇ
Operating and Storage Temperature Range
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O&PQP
R&SQS
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õQö
TU&V
WQXQY
û&ü&ý
^Q_Q`
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÷øQø
Z&[Q[
c&dQd
þQÿ&ÿ
aQbQb
Â
Ã
@ T = 25 C
Ä
Å
@ T = 100 C
T 5$5
I 3$4
R6 7,8
CN
9:<; =#>
T T
¼ ½0¾&¿™À$Á ‡ !ˆ ‰‹ŠQŒŽ ‹‘,Ž !’#“ ’!” •–,z— ˜™•–!” “ š™•‹” š›œ™“ ,•”#žŸ“ ” Œ‹Q“ š#™¡š™˜™•” ,šQ•›¢Q£z¤ š#Ž •¥‘ ,!¥‘ •¦#” Œ’‹§‹¨,© ª,«,¬‹“ •#©!‡ ­© ¬‹›‰
‡ ®‰›¯,!’˜™Ž ,› ” ˆ,¯Ÿ° ±0²³´™´#‘ “ ,›Ž !µ,Ž ’,Ÿµš™‘ ” !¦™¡š¶™·ŸµšQ‘ ” ’
‡ ª‰‹ª,¨,¨•¸¹!µ“ ‘ œ#‘ ‹º–,šQ•,’#˜#‘ ”™¶ ,–!” š™Ž »
VOLTS
e
AMPS
fQg
I KLM
=0.25A)
Typical Thermal Resistance, Junction to Ambient (Note 1)
Typical Junction Capacitance (Note 2)
íQî
ïQð
hQi j
V I#J
Ç
Maximum Reverse Recovery Time (I =0.5A, I =1A, I
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
̟ÍÎÏ$ÎÑПÒÓÔ&Õ×Ö¡ØÙڙÛÝÜ¡ÞßàQáãâ¡äåæQçéè¡ê0ë#ëì
I?
Maximum Forward Voltage at 1 Amp DC
UNITS
k#lQm
VOLTS
n
oQp
qr
s tQuwv xzyD{|&u
nS
H
A
°C/W
pF
°C
} ~ €   ‚ ƒ „ †
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DIOTEC ELECTRONICS CORP.
Data Sheet No. FSDP-103-2B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
1 AMP FAST RECOVERY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES RP100 - RP110
%$&
Peak Forward Surge Current
(Amperes)
Average Forward Current, Io
(Amperes)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
'(
)$*
+$,
-#.
/
150
nporqsoptvuZw#x yVzV{
|} ~OO€‚$ƒ „€r †VwZ‡ˆ‚#‰w
ŠM
 ‹Œ#Ž$‘ t
Ambient Temperature, C
!#"$"
Number of Cycles at 60 Hz
FIGURE 1. FORWARD CURRENT DERATING CURVE
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
I#J$J
Capacitance, pF
Instantaneous Forward Current
(Amperes)
< =
1.0
0.1
> ?
KM
LON$PRk Q
jl
STVU WXZY[ \$] ^OLO_$`$`b
m a
c#dfeT] ghQgiU X
FG H
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
D#E
Reverse Voltage, (Volts)
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC
W
@
AB C
1.8
FIGURE 4. TYPICAL JUNCTION CAPACITANCE
W
T ÍsÍ
0.5
(+)
D.U.T.
(-)
(-)
(+)
0.0
-0.5
W
’“”#•#–p—
˜ ™ š#›pœ Ÿžr œ ¡sž¢s£ ¤ ¥Z¡¦ § ¨ © œ ¤#ª «Ÿ¬œ ¡ª ž ­Ÿ¦#¤Ÿ® žr¢™¯žŸ°#±#² ³
¡ © ´ ´sª#µ
˜ ´ š#›pœ Ÿžr œ ¡sž¢™ ¶ŸŸ¤ ¥¡¦ § ¨ © Ÿ±¬« · ® žsœ ¡ª ž ­Ÿ¦#¤Ÿ® žr¢¸Ÿ¶±#² ¡s
-1.0 ¹º¬»p» ¼ ½¾ºh¿VÀ¬Áº
 ÃpÄrÅ#ÆÇ ¹È ɽ
Ê
ËÌ
FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC
H26
0 12 3 4 5 6 7 8 9 : ;
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