FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS(ON) = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. • Photo Current - 10.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSJ9160D1 10K TXV FSJ9160D3 100K Commercial FSJ9160R1 100K TXV FSJ9160R3 100K Space FSJ9160R4 The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Symbol D G Formerly available as type TA17766. S Package TO-254AA G S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-227 File Number 4465.1 FSJ9160D, FSJ9160R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) FSJ9160D, FSJ9160R -100 -100 UNITS V V 44 28 132 ±20 A A A V 192 77 1.54 132 44 132 -55 to 150 300 W W W/ oC A A A oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current IDSS VDS = -80V, VGS = 0V Gate to Source Leakage Current IGSS VGS = ±20V Drain to Source On-State Voltage VDS(ON) Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge rDS(ON)12 td(ON) tr td(OFF) VGS = -12V, ID = 44A ID = 28A, VGS = -12V tf Qg(TOT) VGS = 0V to -20V Qg(12) VGS = 0V to -12V Threshold Gate Charge Qg(TH) VGS = 0V to -2V Gate Charge Drain TC = 25oC TC = 125oC VDD = -50V, ID = 44A, RL = 1.14Ω, VGS = -12V, RGS = 2.35Ω Gate Charge at 12V Gate Charge Source TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC VDD = -50V, ID = 44A Qgs TYP MAX UNITS - - V - - -7.0 V -2.0 - -6.0 V -1.0 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - - -2.66 V - 0.039 0.055 Ω - - 0.092 Ω - - 40 ns - - 80 ns - - 100 ns - - 45 ns - - 400 nC - 200 230 nC - - 17 nC - 40 55 nC - 74 98 nC V(PLATEAU) ID = 44A, VDS = -15V - -7 - V Input Capacitance CISS 5500 - pF COSS VDS = -25V, VGS = 0V, f = 1MHz - Output Capacitance - 1500 - pF Reverse Transfer Capacitance CRSS - 500 - pF Thermal Resistance Junction to Case RθJC - - 0.65 oC/W Thermal Resistance Junction to Ambient RθJA - - 40 oC/W Plateau Voltage Qgd MIN -100 3-228 FSJ9160D, FSJ9160R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time TEST CONDITIONS ISD = 44A trr MIN TYP MAX UNITS -0.6 - -1.8 V - - 230 ns ISD = 44A, dISD/dt = 100A/µs Electrical Specifications up to 100K RAD PARAMETER TC = 25oC, Unless Otherwise Specified MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) SYMBOL BVDSS VGS = 0, ID = 1mA TEST CONDITIONS -100 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA -2.0 -6.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = -80V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = -12V, ID = 44A - -2.66 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = -12V, ID = 28A - 0.055 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. In Situ Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) (Note 4) ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area SEESOA ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) Ni 26 43 20 -100 Br 37 36 10 -100 Br 37 36 15 -80 Br 37 36 20 -50 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (Typ), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves Unless Otherwise Specified 1E-3 -120 LIMITING INDUCTANCE (HENRY) LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ FLUENCE = 1E5 IONS/cm2 (TYPICAL) -100 VDS (V) -80 -60 -40 -20 TEMP = 25oC 0 0 5 10 15 20 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 1E-7 -10 25 -30 -100 -300 DRAIN SUPPLY (V) VGS (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA 3-229 FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS -1000 FSJ9160D, FSJ9160R Typical Performance Curves Unless Otherwise Specified (Continued) 500 60 TC = 25oC ID , DRAIN CURRENT (A) ID , DRAIN (A) 50 40 30 20 100 100µs 1ms 10 0 -50 0 50 100 TC , CASE TEMPERATURE (oC) 1 -1 150 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10 -10 -100 -200 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, VGS = -12V, ID = 28A NORMALIZED rDS(ON) 2.0 QG -12V QGS QGD VG 1.5 1.0 0.5 0.0 -80 CHARGE -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) BASIC GATE CHARGE WAVEFORM NORMALIZED THERMAL RESPONSE (ZθJC) FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 10 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM 0.01 0.001 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-4 t1 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 3-230 100 t2 101 FSJ9160D, FSJ9160R Typical Performance Curves Unless Otherwise Specified (Continued) IAS , AVALANCHE CURRENT (A) 300 STARTING TJ = 25oC 100 STARTING TJ = 150oC 10 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 10 tAV , TIME IN AVALANCHE (ms) FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDS IAS VDD + 50Ω - tP VDD 50V-150V DUT 50Ω VGS ≤ 20V tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS 0V 10% DUT VGS = -12V 10% 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 3-231 FSJ9160D, FSJ9160R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value On Resistance rDS(ON) TC = 25oC at Rated ID Gate Threshold Voltage VGS(TH) ID = 1.0mA ±25 (Note 7) µA ±20% (Note 8) Ω ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress VGS = -30V, t = 250µs VGS = -30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching SYMBOL SOA IAS TEST CONDITIONS MAX UNITS VDS = -80V, t = 10ms 7.0 A VGS(PEAK) = -15V, L = 0.1mH 132 A Thermal Response ∆VSD tH = 100ms; VH = -25V; IH = 4A 90 mV Thermal Impedance ∆VSD tH = 500ms; VH = -25V; IH = 4A 160 mV 3-232 FSJ9160D, FSJ9160R Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent C. Preconditioning - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data D. Group A - Attributes Data Sheet F. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet G. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet H. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet I. Group D - Attributes Data Sheet 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart 2. Rad Hard TXV Equivalent - Optional Data Package 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data C. Assembly Flow Chart D. SEM Photos and Report D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 3-233 E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FSJ9160D, FSJ9160R TO-254AA 3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE INCHES A ØP E SYMBOL A1 Q H1 D 1 2 NOTES 0.249 0.260 6.33 6.60 - 0.050 1.02 1.27 - Øb 0.035 0.045 0.89 1.14 2, 3 D 0.790 0.800 20.07 20.32 - E 0.535 0.545 13.59 13.84 0.150 TYP 0.300 BSC 0.245 0.265 - 3.81 TYP 4 7.62 BSC 4 6.23 6.73 - J1 0.140 0.160 3.56 4.06 4 L 0.520 0.560 13.21 14.22 - ØP 0.139 0.149 3.54 3.78 - Q 0.110 0.130 2.80 3.30 - NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC outline TO-254AA dated 11-86. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. 3 e MAX 0.040 e1 Øb MILLIMETERS MIN A H1 L MAX A1 e 0.065 R MAX. TYP. MIN J1 e1 WARNING! BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 3-234 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029