DEC FSPD-200-1B 2 amp fast recovery silicon diode Datasheet

DIOTEC ELECTRONICS CORP.
Data Sheet No. FSPD-200-1B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
2 AMP FAST RECOVERY SILICON DIODES
MECHANICAL SPECIFICATION
FEATURES
SERIES RGP200 - RGP210
ACTUAL SIZE OF
DO-41 PACKAGE
R
PROPRIETARY SOFT GLASS JUNCTION
PASSIVATION FOR SUPERIOR RELIABILITY AND
PERFORMANCE
DO - 41
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
LL
BD (Dia)
EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES
LOW FORWARD VOLTAGE DROP
¡
BL
Color Band
Denotes
Cathode
¢
2A at T = 75 C WITH NO THERMAL RUNAWAY
MECHANICAL DATA
LL
‰=Š ‹ŒlŽP‰‘B’S“ ”•—–™˜š ›Œ›Œœ˜UžŸ¡ ¢£š Š–™–Š¤¥ š ¥ ¦ ž§ŠU¦ ¥ ¨©ª/”«“ ¬U­
® Œ¯A–°¥ ¨Šš ‹U±š Š ¦ Œ›Š ¥ ŠšUš ŒŠ›‹
LD (Dia)
²˜š ›Œ¯ ¥ ¨©U±Œ¯´³<µ ¢“ ² ® ·¶U¬U¶³—Œ ¦¸˜›¶U¬U¹<©ºŠ¯ Š¨U¦ ŒŒ›
ANT
±˜š Š¯ ¥ ¦ ž ‰P˜š ˜¯¤Š¨››Œ¨˜¦Œ ‹<»UŠ ¦ ¸˜›Œ
oHS
³—˜º¨U¦ ¥ ¨©°±˜‹¥ ¦¥ ˜¨*¼—¨ ž
LI
MP
O
C
Minimum
In
mm
Sym
R
0.160
BL
½ Œ¥ ©¸U¦$ ¬¾ ¬•’º¨» Œ ‹Ÿ ¬¾ ”¿¯ Š–‹­
4.1
Maximum
In
mm
5.2
0.205
BD
0.103
2.6
0.107
2.7
LL
LD
1.00
0.028
25.4
0.71
0.034
0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
sÙÀKàAÒÃÁ ÄAÂÏ Åà ÕÄÑ ÁÍÅAÎÆlÎAÁÓÁ ÕÂÁ à ÂÆÇ Ã ÛÍAÈ/ÍÚ É ÓÊÑ ÒAÁAÁÁAÑ ÖA×AËÔ(Æ Ì Á Ú Ã Û×Í ÍÍ Ä ÚÏÂAÁ Ü Â Â ÍÝAÍ/ËÞ$ÕAß ÎÐAÚ ÍAÏÏ ÏÏÍ ÁÍAÆ ÂÄÃÐ ÆÂÏ Â ÌÍ/à Ûá Ð ÍlÇ ÄAÒÝ Ñ Í ÏâÆà ÄAØÆ/× ÒÐA ÕÓ ÍAÃ Û Ï ÔlÍ Ã Ñ Æ ÒÍlÁA×ÆAØÎÍÕÃ Ö Ã Í×Ø
PARAMETER (TEST CONDITIONS)
¬~­®A¯ ­°± ²³´)­®
"!$# % &(') *(+,%-# . (+/
žŸ¡ ¢£¢¤$ž¥¦§-¨ © Ÿ)ª«
Š‹Œ ŽŽ‘D‹ ’5“~‘)”•• ‘–D—-“~‘D˜)‘• ™(‘š›œ — ‹)‘
ãBäåæ çèåéêæ ëçæì°íåî/ï ð ñ ð åìòôóææ åõUïöø÷!ùúUûü òþý
ÿåçì åõèï<
ù úUûð õ û
0 1)2354(6-7 827:9<; = 7:>1?@= 7A7 1 BDC E F(G HI<;J1(KL M B(>-N 1<O)2N PL M B)1Q82R)1
L = S)17AM IS(6(L(1)96-B7 2C:1)9N 62)9 T
UVWX YZY[(\-] ^V ]:_` \-a b V)cd5VDbegfhYi jk l
!#" $&%'$)(+*,-*/. 0-*(+*-123,-*/. 4657" $8*:9<;>K =3?'@ ABDC; L =/EFBDC-;G
LL =3?3@ HAIBDJ
m nop qrqtsvu)wx n)yw<zv{}|~wDu)wx )w{@r xAx w €D
s$J|vn w)‚zv{}ƒ „ † ‡(ˆDp €(y‰ †-„  n)yw
-/.01 2 3465782/9 1 :8<;=30 321 9 382 ><?A@B:9 >C/D
ƒl„(†*‡ ˆ a bcde$fgKh*i e$jf klb$dmlnopfKq*qsr t e$ji eu$eKi g$euKv*r k fw*evKx*yuKv6r k g
a zKc{$|$|}K~=fuKfKt r f$*r e€K$v*}Kgshsr k*x f$k v*i ‚
RATINGS
SYMBOL
à DÄ Å
¼ ½¾¿
À ÁDÁÂ
º»
Û ÜÞÝ ß
× ØÚÙ
¸¹¹
µ ¶·
=E F
!
"$#&%('*)
j'k>lnm/o+p
MNN
OFPIQ
wx
t/u+v
RFSR
àâáÊá
åÞæâç
ëâìÊì
}~~
yz
€
{|
‚‚
üÚýÊþ
q'r>s
TFUWV
ãâäÊä
èÊéÊê
ôâõÊõ
ö
g/h+i
XYFZ
ƒ„F„
F†F‡
ˆ‰F‰
UNITS
d/e+f
[\]
íÊîÊî
ïÊðÊñ
òÊóÊó
a/b+c
^I_`
Š‹‹‹
ŒF
ÌÍÎ Ï
Ê÷ ø
ùÊú û
ÿ KI J
L M6NPO QSRUTKV(N
Ð ÑQÒÊÓ Ô
Ž
ÆvÇ5ÈÊÉ Ë
‘F’
“”F”–• —'˜š™ ›œž
Ÿ-
ÕÖ
G H
+, W
XY Z [ \ ] ^ _ ` `
H29
DIOTEC ELECTRONICS CORP.
Data Sheet No. FSPD-200-2B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
2 AMP FAST RECOVERY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES RGP200 - RGP210
†
‡ˆ
‰ Š
‹ Œ
7‘’B‘7“•”–4— ˜™7š
›œ ž Ÿ¡Ÿ@¢ £¤7¥ –
¦@§¥ ¨7Ÿ@¢ £–ª©«§4¬–
Ž

£¥¤§¦/¨ ©'ª«¬©3¤&­-©'® ¯«±°'®<©3²´µ ³
€
‚
FIGURE 1. FORWARD CURRENT DERATING CURVE
ê±ë
ƒ„ „
¶¸·'¹&º-»'¼/½3¾7¿+À3Á' »Ã6ÄÅ#ÆÇ8ÈÊÉ
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
çéè
TJ = 25 oC
f = 1 MHz
VSIG = 50 mV P-P
1.0
ìéí
0.1
- ,.
! !#
/ "
$%'&( )*()+ 0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Ö ×Ø-Ù Ú/×Ù Ú'×-Û-Ü7ÝØÞ-Ü7ß à´Ú'ß<á:â#Ü#ã Ù Ú-ä'Ûå â/Ü7ã Ù Ø3æ
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC
W
ýþ ÿ
1.8
ü
î+ïð-ï'ñ ò3ï ó#ô7õ ö ÷3ø3ï'ùIú ó/ô7õ ö ò3û
FIGURE 4. TYPICAL JUNCTION CAPACITANCE
W
~B
gWh i
eWf e
a bc d
W
]F^R_ `
01243576
8 9 :;< = >@? < AB>BCBDFEFGABH IJ K < ELM ?4< ANLF>FOPHPEPQ >@CR9(S>FTU4VFAWK XFX(LY
8 XF:;< = >@? < AB>BCR9 ZFEFGABH IJ K =FU4M[ Q >B< ANLF>FOPHPEPQ >@C(\PZ@U4VFAR=
j@k4ll m nkop4qk
r s7t(uv w jyx zn
{
|}
FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC
H30
Ë ÌÍ Î Ï Ð Ñ Ò Ó Ô Õ Õ
Similar pages