Intersil FSPYE234R3 Radiation hardened, segr resistant n-channel power mosfet Datasheet

FSPYE234R, FSPYE234F
TM
Data Sheet
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
FETs combine this electrical capability with total dose
radiation hardness up to 300K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Intersil FS families have always featured.
The Intersil portfolio of Star*Power FETs includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETs are optimized for total dose
and rDS(ON) performance while exhibiting SEE capability at
full rated voltage up to an LET of 37. Star*Power Gold FETs
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
June 2000
File Number
4873
Features
• 9A, 250V, rDS(ON) = 0.215Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 100% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 4.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
S
Packaging
SMD.5
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45216W.
Ordering Information
RAD LEVEL
10K
SCREENING LEVEL PART NUMBER/BRAND
Engineering samples FSPYE234D1
100K
TXV
FSPYE234R3
100K
Space
FSPYE234R4
300K
TXV
FSPYE234F3
300K
Space
FSPYE234F4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
FSPYE234R, FSPYE234F
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
FSPYE234R, FSPYE234F
UNITS
250
250
V
V
9
6
32
±30
A
A
A
V
42
17
0.33
30
9
32
-55 to 150
300
W
W
W/ oC
A
A
A
oC
oC
1.0 (Typical)
g
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
Zero Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
Drain to Source On-State Voltage
Drain to Source On Resistance
VDS(ON)
rDS(ON)12
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
VDS = 200V,
VGS = 0V
VGS = ±30V
Qg(12)
Gate Charge Source
Qgs
Gate Charge Drain
Qgd
UNITS
-
-
V
-
-
5.5
V
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
2.0
-
4.5
V
1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
1.98
V
TC = 25oC
-
0.185
0.215
Ω
TC = 125oC
VDD = 125V, ID = 9A,
RL = 13.9Ω, VGS = 12V,
RGS = 7.5Ω
VGS = 0V to 12V
MAX
250
tf
Total Gate Charge
TYP
TC = -55oC
VGS = 12V, ID = 9A
ID = 6A,
VGS = 12V
MIN
VDD = 125V,
ID = 9A
-
-
0.413
Ω
-
-
20
ns
-
-
25
ns
-
-
30
ns
-
-
15
ns
-
30
33
nC
-
10
12
nC
-
8
10
nC
Gate Charge at 20V
Qg(20)
VGS = 0V to 20V
-
45
-
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
3
-
nC
Plateau Voltage
V(PLATEAU)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
2
RθJC
ID = 9A, VDS = 15V
-
6.5
-
V
VDS = 25V, VGS = 0V,
f = 1MHz
-
1400
-
pF
-
200
-
pF
-
8
-
pF
3.0
oC/W
-
-
FSPYE234R, FSPYE234F
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
TEST CONDITIONS
MIN
MAX
UNITS
ISD = 9A
-
-
1.2
V
ISD = 9A, dISD/dt = 100A/µs
-
-
310
ns
-
1.9
-
µC
QRR
TC = 25oC, Unless Otherwise Specified
Electrical Specifications up to 300K RAD
MIN
PARAMETER
TYP
SYMBOL
TEST CONDITIONS
MAX
MIN
100K RAD
MAX
300K RAD
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
250
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±30V, VDS = 0V
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 200V
-
25
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 9A
-
1.98
-
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 6A
-
0.215
-
0.270
Ω
-
-
2.0
4.5
1.5
-
100
-
V
4.5
V
100
nA
50
µA
2.97
V
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST
SYMBOL
Single Event Effects Safe Operating Area
SEESOA
ION SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS (V)
Br
37
36
-10
250
Br
37
36
-15
200
I
60
32
-2
200
I
60
32
-8
150
Au
82
28
0
150
Au
82
28
-5
100
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm2, RANGE = 28µ
LET = 37 BROMINE
280
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
280
240
TEMP = 25oC
240
200
VDS (V)
VDS (V)
200
160
160
120
120
80
80
LET = 82 GOLD
40
40
0
0
0
-4
-8
-12
VGS (V)
-16
-20
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
3
LET = 60 IODINE
0
-5
-10
-15
-20
-25
VGS (V)
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
-30
FSPYE234R, FSPYE234F
Performance Curves
Unless Otherwise Specified
(Continued)
10
1E-4
ILM = 10A
8
ID , DRAIN (A)
LIMITING INDUCTANCE (HENRY)
1E-3
30A
1E-5
100A
300A
6
4
1E-6
2
1E-7
30
10
100
300
0
-50
1000
0
50
150
100
TC , CASE TEMPERATURE (oC)
DRAIN SUPPLY (V)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO IAS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
100
ID , DRAIN CURRENT (A)
TC = 25oC
12V
QG
10
100µs
1
QGS
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
QGD
VG
10ms
0.1
1
10
100
1000
CHARGE
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
40
2.5
ID , DRAIN TO SOURCE CURRENT (A)
NORMALIZED rDS(ON)
PULSE DURATION = 250ms, VGS = 12V, ID = 6A
2.0
1.5
1.0
0.5
0.0
-80
DESCENDING ORDER
VGS = 14V
VGS = 12V
VGS = 10V
VGS = 8V
30
20
VGS = 6 V
10
0
0
-40
0
40
80
120
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
4
2
4
6
8
160
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
10
FSPYE234R, FSPYE234F
NORMALIZED THERMAL RESPONSE (ZθJC)
Performance Curves
Unless Otherwise Specified
(Continued)
10
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
100
101
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
IAS , AVALANCHE CURRENT (A)
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
tP
DUT
tP
VDD
+
50Ω
VGS ≤ 20V
0V
VDS
IAS
VDD
50V-150V
50Ω
tAV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
5
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
FSPYE234R, FSPYE234F
Test Circuits and Waveforms
(Continued)
tON
VDD
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
VDS
VGS = 12V
10%
DUT
10%
0V
90%
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±30V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 7)
µA
Drain to Source On Resistance
rDS(ON)
TC = 25oC at Rated ID
±20% (Note 8)
Ω
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Unclamped Inductive Switching
VGS(PEAK) = 20V, L = 0.1mH; Limit = 30A
VGS(PEAK) = 20V, L = 0.1mH; Limit = 30A
Thermal Response
tH = 10ms; VH = 25V; IH = 1A; LIMIT = 74mV
tH = 10ms; VH = 25V; IH = 1A; LIMIT = 74mV
Gate Stress
VGS = 45V, t = 250µs
VGS = 45V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
VDS = 200V, t = 10ms
0.30
A
Thermal Impedance
∆VSD
tH = 100ms; VH = 25V; IH = 1A
165
mV
6
FSPYE234R, FSPYE234F
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
F. Group A
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
7
- Attributes Data Sheet
- Attributes Data Sheet
- Pre and Post Radiation Data
FSPYE234R, FSPYE234F
SMD.5
3 PAD CERAMIC LEADLESS CHIP CARRIER
INCHES
E
SYMBOL
D
MIN
MAX
MILLIMETERS
MIN
MAX
NOTES
A
0.112
0.124
2.84
3.15
3
b
0.090
0.100
2.28
2.54
-
D
0.291
0.301
7.39
7.64
-
D1
0.281
0.291
7.13
7.39
-
D2
0.070
0.080
1.78
2.03
-
E
0.395
0.405
10.03
10.28
-
E1
0.220
0.230
5.58
5.84
-
E2
0.115
0.125
2.92
3.17
-
NOTES:
1. No current JEDEC outline for this package.
A
2. Controlling dimension: Inch.
3. Measurement prior to pre-solder coating the mounting pads.
4. Revision 4dated 5-00.
E1
E2
2
D2
3
D1
1
b
1 - GATE
2 - SOURCE
3 - DRAIN
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8
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