FSS273 Ordering number : ENA0329 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS273 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID Drain Current (PW≤10s) ID Duty cycle≤1% Drain Current (PW≤10µs) IDP PD Duty cycle≤1% 32 A Mounted on a ceramic board (1200mm2✕0.8mm), PW≤10s 2.4 W Allowable Power Dissipation 8 A 8.5 A Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=45V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A RDS(on)1 RDS(on)2 ID=8A, VGS=10V ID=4A, VGS=4V Input Capacitance Ciss Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time Marking : S273 V(BR)DSS Conditions td(off) tf Ratings min typ Unit max 45 V 1 µA ±10 µA 2.6 V 16 22 mΩ 24 34 mΩ 1.2 6 10 S 2225 pF 260 pF VDS=20V, f=1MHz See specified Test Circuit. 190 pF 27 ns See specified Test Circuit. 55 ns See specified Test Circuit. 150 ns See specified Test Circuit. 80 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 22006PA MS IM TB-00002037 No. A0329-1/4 FSS273 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg nC Qgs VDS=24V, VGS=10V, ID=8A VDS=24V, VGS=10V, ID=8A 40 Gate-to-Source Charge 6 nC Gate-to-Drain “Miller” Charge Qgd VDS=24V, VGS=10V, ID=8A 8 Diode Forward Voltage VSD IS=8A, VGS=0V nC 0.82 Package Dimensions unit : mm 7005-002 1.2 V Switching Time Test Circuit VDD=24V 5 10V 0V 1 4 0.2 1.5 1.8 MAX 0.43 1.27 0.595 ID=8A RL=3.0Ω VOUT D PW=10µs D.C.≤1% G 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain P.G 50‰ FSS273 S 0.1 5.0 VIN VIN 6.0 4.4 0.3 8 SANYO : SOP8 ID -- VDS V 2 4 2 1 --25° C 3 6 Ta=7 5°C 4 8 25° C Drain Current, ID -- A V 4.0 3.5 V VGS=3.0V 3.3 5 ID -- VGS VDS=10V 10 6 10.0V Drain Current, ID -- A 7 12 5.0V 8.0V 6. 0V 8 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 80 0.4 IT10731 3.6 4.0 IT10732 RDS(on) -- Ta 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 60 50 40 ID=4A 30 8A 20 10 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT10733 35 =4A , ID V 4 = V GS 30 25 =8A V, I D =10 VGS 20 15 10 5 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT10734 No. A0329-2/4 FSS273 C 25° 5 °C 3 7 2 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 3 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 2 1000 7 5 3 Coss 2 Crss 5 10 15 20 30 25 35 40 Drain-to-Source Voltage, VDS -- V 100 tf 5 td(on) tr 2 10 7 0.1 2 3 5 7 2 1.0 3 5 7 2 10 Drain Current, ID -- A 3 IT10739 PD -- Ta 3.0 2.5 2.4 1.1 IT10736 6 5 4 3 2 100 7 5 3 2 td(off) 3 1.0 0 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC Drain Current, ID -- A Switching Time, SW Time -- ns 3 7 0.9 7 IT10737 VDD=24V VGS=10V 2 0.8 8 0 45 SW Time -- ID 5 0.7 1 100 0 0.6 VDS=24V ID=8A 9 Ciss 0.5 VGS -- Qg 10 5 0.4 Diode Forward Voltage, VSD -- V f=1MHz 3 0.3 IT10735 7 Allowable Power Dissipation, PD -- W 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 Ciss, Coss, Crss -- VDS 10000 1.0 7 5 3 2 --25 °C Ta= 5 °C --25 10 7 5 3 2 5°C 7 VGS=0V Ta= 7 2 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 10 IS -- VSD 5 3 2 VDS=10V 25 ° C yfs -- ID 5 10 7 5 3 2 1.0 7 5 3 2 40 IT10738 ASO ≤10µs IDP=32A 1m ID=8A s 10 ms 10 0m s DC op Operation in this area is limited by RDS(on). 10 s era tio n 0.1 7 5 Ta=25°C 3 Single pulse 2 2 0.01 Mounted on a ceramic board (1200mm ✕0.8mm) 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT10740 M ou nt ed 2.0 on ac er am ic 1.5 bo ar d( 12 00 m 1.0 m2 ✕0 .8 m m ), 0.5 PW ≤1 0 s 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10741 No. A0329-3/4 FSS273 Note on usage : Since the FSS273 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. PS No. A0329-4/4