FTD1028 Ordering number : EN8741 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FTD1028 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V --3 A Drain Current (DC) ID Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% --15 A Mounted on a ceramic board (1000mm2✕0.8mm) 1unit 0.8 W PT Tch Mounted on a ceramic board (1000mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Power Dissipation 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V --20 IDSS IGSS VGS(off) yfs VDS=--10V, ID=--1mA VDS=--10V, ID=--2A --0.4 RDS(on)1 RDS(on)2 ID=--2A, VGS=--4V ID=--1A, VGS=--2.5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz Turn-ON Delay Time td(on) tr td(off) tf Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time Marking : D1028 V(BR)DSS Conditions 3.8 Unit max V --1 µA ±10 µA --1.4 6.3 V S 55 77 mΩ 81 113 mΩ 900 pF 125 pF 115 pF See specified Test Circuit. 16 ns See specified Test Circuit. 54 ns See specified Test Circuit. 107 ns See specified Test Circuit. 82 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92706PE MS IM TC-00000216 No.8741-1/4 FTD1028 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--3A 9.3 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--3A 2.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--3A 1.9 Diode Forward Voltage VSD IS=--3A, VGS=0V Package Dimensions --0.84 nC --1.2 V Electrical Connection unit : mm (typ) 7006A-002 0.95 8 3.0 7 6 5 0.125 5 1 4 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 0.05 6.4 4.5 0.5 8 SANYO : TSSOP8 0.95 0.25 0.425 0.65 1 2 3 4 Top view Switching Time Test Circuit VDD= --10V VIN 0V --4V ID= --2A RL=5Ω VIN D VOUT PW=10µs D.C.≤1% G FTD1028 P.G 50Ω S No.8741-2/4 FTD1028 ID -- VDS --1.5 --1.0 --0.5 --2.0 --1.5 --1.0 --0.5 VGS= --1.0V 0 C --25°C --1.5V --2.5 25° --2.0 --3.0 Ta=7 5°C --2.5 VDS= --10V 0V . --2 Drain Current, ID -- A Drain Current, ID -- A --3.0 ID -- VGS --3.5 --4.0 V --3.0 V --2. 5V --8.0 --10.0V V --6.0V --3.5 0 0 --0.2 --0.1 --0.3 --0.4 --0.5 --0.6 Drain-to-Source Voltage, VDS -- V 0 --0.7 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 140 --0.5 IT08665 IT08666 RDS(on) -- Ta 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 ID= --1A --2A 80 60 40 20 0 --4 --6 --8 --10 10 7 5 yfs -- ID 25 1.0 7 5 = Ta --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C °C °C 75 0.1 7 5 140 160 IT08668 IS -- VSD VGS=0V 3 2 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 2 0.01 --0.001 2 3 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 Drain Current, ID -- A 5 7 --10 --0.001 --0.3 5 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 IT08670 Ciss, Coss, Crss -- VDS 5 VDD= --10V VGS= --4V 7 --0.4 IT08669 SW Time -- ID 1000 f=1MHz 3 2 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 20 7 5 °C 25 -- 40 IT08667 VDS= --10V 3 2 V = --4.0 2A, V GS -= ID V = --4.5 2A, V GS -= ID 60 0 --60 --12 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V 80 --25° C --2 , --1A I D= 25° C 0 .5V = --2 VGS 100 5°C 100 120 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C td(off) 100 tf 7 5 3 tr td(on) 2 7 5 3 2 Coss 100 Crss 7 10 7 5 --0.01 Ciss 1000 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT08671 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT08672 No.8741-3/4 FTD1028 VGS -- Qg 3 2 VDS= --10V ID= --3.5A --3.5 --10 7 5 --3.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.0 --2.5 --2.0 --1.5 --1.0 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT08673 PD -- Ta 1.2 PW≤10µs 1m 10 0µ s ID= --3A DC --1.0 7 5 s 10 ms 10 0m s op era tio n( Ta = 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 3 2 --0.5 0 Allowable Power Dissipation, PD -- W 3 2 ASO IDP= --15A 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (1000mm2✕0.8mm) 1unt --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT11555 Drain-to-Source Voltage, VDS -- V Mounted on a ceramic board (1000mm2✕0.8mm) 1.0 0.8 To t al Di ss 0.6 ati on 1u 0.4 ip nit 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11556 Note on usage : Since the FTD1028 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No.8741-4/4