MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2 20.0 φ 3.2 2 19.5 min 4.4 1.0 2 1 5.45 G 3 5.45 0.6 2.8 4 3 • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........100ns 1 2 3 4 1 GATE DRAIN SOURCE DRAIN 2 4 T0-3P APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS VGSS Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V –150 ±20 V V ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30µH –30 –120 –30 A A A IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature –30 –120 150 –55 ~ +150 –55 ~ +150 A A W °C °C 4.8 g — Parameter Weight Conditions Typical value Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30SMJ-3 P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Typ. Max. ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –150V, VGS = 0V –150 — — — — — — ±0.1 –0.1 V µA mA ID = –1mA, VDS = –10V ID = –15A, VGS = –10V ID = –15A, VGS = –4V ID = –15A, VGS = –10V ID = –15A, VDS = –10V –1.0 — — — –1.5 78 85 –1.17 –2.0 100 111 –1.50 V mΩ mΩ V — — — — 41.3 11430 674 320 — — — — S pF pF pF — — — — 61 99 878 330 — — — — ns ns ns ns — –1.0 –1.5 V — — — 100 0.83 — °C/W ns VDS = –10V, VGS = 0V, f = 1MHz VDD = –80V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = –15A, VGS = 0V Channel to case Thermal resistance Reverse recovery time Unit Min. IS = –30A, dis/dt = 100A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) –102 160 120 80 40 0 0 50 100 150 –3 –2 100µs –101 –7 –5 1ms –3 –2 10ms –100 DC –7 –5 TC = 25°C –3 Single Pulse –2 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2 200 OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) –6V –5V –4V –3.5V –3V –20 PD = 150W –10 –2 –4 –6 –20 TC = 25°C Pulse Test –30 0 tw = 10µs DRAIN-SOURCE VOLTAGE VDS (V) –40 VGS = –10V 0 –7 –5 CASE TEMPERATURE TC (°C) –50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 –8 –10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 VGS = –10V –6V –4V –16 –3V TC = 25°C Pulse Test –12 –2.5V –8 –4 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30SMJ-3 P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 TC = 25°C Pulse Test –8 –6 –4 ID = –45A –30A –2 –15A 0 0 –4 –6 –8 160 120 VGS = –4V 80 –10V 40 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 TC = 25°C VDS = –10V Pulse Test –40 TC = 25°C Pulse Test 0 0 –10 –10 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) –50 –2 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –10 –30 –20 –10 TC = 25°C 75°C 125°C 3 2 101 7 5 3 2 0 0 –2 –4 –6 –8 100 –7 –100 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 105 2 7 TCh = 25°C 5 f = 1MHZ 3 VGS = 0V 2 103 Ciss 104 7 5 3 2 103 7 5 Coss 3 2 Crss 102 0 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) VDS = –10V Pulse Test td(off) 7 5 3 tf 2 102 7 5 3 tr td(on) TCh = 25°C VDD = –80V VGS = –10V RGEN = RGS = 50Ω 2 –7 –100 –2 –3 –5–7 –101 –2 –3 –5–7 –102 –2 –3 –5–7 DRAIN CURRENT ID (A) Jan.1999 MITSUBISHI Pch POWER MOSFET RY A N I . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL FX30SMJ-3 P HIGH-SPEED SWITCHING USE –10 SOURCE CURRENT IS (A) –6 VDS = –50V –80V –100V –4 –2 0 40 80 120 160 –20 –10 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 3 2 100 7 5 3 2 –50 0 50 100 –2.4 –1.6 –0.8 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = –10V ID = –1mA –3.2 CHANNEL TEMPERATURE Tch (°C) 0.4 0 GATE CHARGE Qg (nC) VGS = –10V 7 ID = 1/2ID 5 Pulse Test 1.4 TC = 125°C 75°C 25°C –30 0 101 10–1 VGS = 0V Pulse Test –40 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) –50 TCh = 25°C ID = –30A –8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D = 1.0 7 5 0.5 3 0.2 2 0.1 PDM 10–1 7 5 3 2 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999