MITSUBISHI Nch POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE FY6ACJ-03A OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm 1.8 MAX. 5.0 ➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN 0.4 1.27 ➆➇ ➃ ➁ ● 4V DRIVE ● VDSS .................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 23mΩ ● ID ........................................................................................... 6A ➄➅ ➀ ➂ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Ratings Unit VGS = 0V VDS = 0V Conditions 30 ±20 V V L = 10µH 6 42 6 A A A 1.7 6.8 1.8 –55 ~ +150 –55 ~ +150 A A W °C °C 0.07 g Typical value Sep.1998 MITSUBISHI Nch POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Limits Test conditions Turn-off delay time Fall time Source-drain voltage ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 3A, VGS = 4V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω IS = 1.7A, VGS = 0V Channel to ambient Thermal resistance Reverse recovery time IS = 1.7A, dis/dt = –50A/µs Unit Min. 30 — — Typ. — — — Max. — ±0.1 0.1 1.0 — — — 1.5 17 26 102 2.0 23 40 138 V mΩ mΩ mV — — — — 12 1000 350 160 — — — — S pF pF pF — — — — 15 25 75 55 — — — — ns ns ns ns — 0.75 1.10 V — — — 35 69.4 — °C/W ns V µA mA PERFORMANCE CURVES DRAIN CURRENT ID (A) 102 1.6 1.2 0.8 0.4 0 0 50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 2 50 100 150 200 tw = 100µs 101 7 5 3 2 1ms 10ms 100 7 5 3 2 100ms 10–1 DC TC = 25°C Single Pulse 2 3 57100 2 3 57101 2 3 57102 2 3 57103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 10V 8V 6V 5V 40 7 5 3 2 7 5 3 2 20 TC = 25°C Pulse Test 4V 30 20 3V 10 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.0 TC = 25°C Pulse Test VGS = 10V 8V 6V 5V 4V 16 12 3V 8 4 PD = 1.8W PD = 1.8W 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 0.8 0.6 ID = 24A 0.4 12A 0.2 6A 0 3A 0 50 2 4 6 8 VGS = 4V 32 24 10V 16 8 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 TC = 25°C VDS = 10V Pulse Test 40 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 40 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 30 20 10 VDS = 10V 7 Pulse Test 5 4 TC = 25°C 3 75°C 125°C 2 101 7 5 4 3 2 0 0 2 4 6 8 100 0 10 10 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 102 3 2 Ciss 103 7 5 Coss 3 2 Crss 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V 101 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 7 5 CAPACITANCE Ciss, Coss, Crss (pF) 2 td(off) 7 5 4 3 tf tr 2 td(on) 101 7 5 4 3 TCh = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) VDS = 15V 20V 25V 6 4 2 0 4 8 12 16 30 10 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 3 2 100 7 5 3 2 –50 0 50 100 2.4 1.6 0.8 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 3.2 CHANNEL TEMPERATURE Tch (°C) 0.4 0 GATE CHARGE Qg (nC) VGS = 10V 7 ID = 6A 5 Pulse Test 1.4 TC = 125°C 75°C 25°C 20 0 101 10–1 VGS = 0V Pulse Test 40 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 50 TCh = 25°C ID = 6A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 101 0.2 7 5 0.1 3 2 PDM 100 7 5 3 2 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998