Renesas FY8BCH-02F High-speed switching use Datasheet

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April 1st, 2010
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April 1, 2003
MITSUBISHI
POWER
MOSFET
MITSUBISHI
NchNch
POWER
MOSFET
ARY
N
I
M
I
PREL
FY8BCH-02F
FY8BCH-02F
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ation change.
ecific
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fi
a
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re
is is nic limits a
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Notice parame
Som
HIGH-SPEED
SWITCHING
USE
HIGH-SPEED
SWITCHING
USE
FY8BCH-02F
OUTLINE DRAWING
Dimensions in mm
➄
6.4
4.4
➇
➀
➃
3.0
1.1
0.275
0.65
➁➂
➃
➀
➇
● 2.5V DRIVE
● VDSS .................................................................................. 20V
● rDS (ON) (MAX) .............................................................. 16mΩ
● ID ........................................................................................... 8A
➁ ➂ ➅ ➆ SOURCE
➃ ➄ GATE
➀ ➇ DRAIN
➄
➅➆
TSSOP8
APPLICATION
Li - ion battery protection
MAXIMUM RATINGS
(Tc = 25°C)
Symbol
VDSS
Parameter
Drain-source voltage
VGSS
ID
Gate-source voltage
Drain current
IDM
Drain current (Pulsed)
IDA
IS
Avalanche current (Pulsed)
Source current
ISM
PD
Source current (Pulsed)
Maximum power dissipation
Tch
Tstg
Channel temperature
Storage temperature
—
Weight
Conditions
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Ratings
20
Unit
V
±10
8
V
A
56
A
8
1.5
A
A
6.0
1.6
A
W
–55 ~ +150
–55 ~ +150
°C
°C
0.035
g
Sep. 2000
MITSUBISHI Nch POWER MOSFET
ARY
FY8BCH-02F
IMIN
PREL
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ation
nge.
pecific to cha
final s subject
a
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Notice parame
Som
ELECTRICAL CHARACTERISTICS
Symbol
HIGH-SPEED SWITCHING USE
(Tch = 25°C)
Parameter
V (BR) DSS Drain-source breakdown voltage
V (BR) GSS Gate-source breakdown voltage
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
VGS (th)
Gate-source threshold voltage
rDS (ON)
rDS (ON)
Drain-source on-state resistance
Drain-source on-state resistance
VDS (ON)
yfs 
Drain-source on-state voltage
Forward transfer admittance
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
Rise time
td (off)
tf
Turn-off delay time
Fall time
VSD
Rth (ch-a)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Test conditions
Limits
Unit
Min.
Typ.
Max.
20
±10
—
—
—
—
V
V
—
—
—
—
±10
0.1
µA
mA
0.5
0.9
1.5
V
—
—
13
17
16
22
mΩ
mΩ
ID = 8A, VDS = 10V
—
—
0.104
—
0.128
—
V
S
VDS = 10V, VGS = 0V, f = 1MHz
—
—
1800
—
—
—
pF
pF
—
—
—
—
—
—
pF
ns
—
—
—
ns
—
—
—
—
—
—
ns
ns
—
—
0.85
—
1.1
78.1
V
°C/W
—
50
—
ns
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 4V
ID = 4A, VGS = 2.5V
ID = 8A, VGS = 4V
VDD = 10V, ID = 4A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to ambient
IS = 1.5A, dis/dt = –50A/µs
Sep. 2000
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