Transistors SMD Type PNP Transistors FZT1149A (KZT1149A) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 ■ Features 7.0±0.3 ● Collector Emitter Voltage VCEO=-25V 3.50±0.2 4 ● Collector Current Capability IC=-4A ● Low Saturation voltage 1 2 3 0.250 2.30 (typ) 1.80 (max) Gauge Plane 0.02 ~ 0.1 1.Base 2.Collector 0.70±0.1 4.60 (typ) 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -30 Collector - Emitter Voltage VCEO -25 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -4 Collector Current - Pulse ICP -10 Unit V A Base Current IB -500 mA Collector Power Dissipation PC 2.5 W Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors FZT1149A (KZT1149A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector- base breakdown voltage Test Conditions VCBO Ic= -100 μA， IE=0 Min Typ Max -30 Collector- emitter breakdown voltage VCES Ic= -100 uA， IB=0 -25 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -25 Collector- emitter breakdown voltage VCEV IC=-100 uA, VEB=1V -25 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -24 V , IE=0 -100 Collector-emitter cut-off current ICES VCE= -20 V , IB=0 -100 Emitter cut-off current IEBO IC=-1 A, IB= -7mA (Note.1) -80 (Note.1) -170 (Note.1) -240 IC=-2 A, IB= -30mA (Note.1) -260 IC=-4 A, IB=-140mA (Note.1) -350 (Note.1) -1.05 Base - emitter saturation voltage VBE(sat) IC=-4 A, IB=-140mA Base-Emitter Turn-On Voltage VBE(on) VCE= -4V, IC= -2A hFE(1) VCE= -2V, IC= -10mA 270 DC current gain (Note.1) (Note.1) -1 hFE(2) VCE= -2V, IC= -500mA 250 hFE(3) VCE= -2V, IC= -2 A 195 hFE(4) VCE= -2V, IC= -5 A 115 Collector output capacitance Transition frequency mV V 800 VCE= -2V, IC= -10 A 50 ton IC=-4A, IB= -40mA,VCC=-10V 150 toff IC=-4A, IB=±40mA,VCC=-10V 270 Cob VCB= -10V, f=1MHz 50 pF VCE= -10V, IC= -50mA,f=50MHz 135 MHz hFE(5) Switching Times nA -100 IC=-0.5 A, IB=-3mA VCE(sat) V VEB= -4V , IC=0 IC=-100mA, IB=-10mA Collector-emitter saturation voltage Unit fT ns Note.1: Pulse width=300us. Duty cycle ≤ 2% ■ Typical Characterisitics 50 D=t1 tP t1 40 tP 30 20 D=0.5 D=0.2 D=0.1 10 D=0.05 Single Pulse 0 100µs 1ms 10ms 100ms 1s Pulse Width 10s 100s Transient Thermal Resistance 2 www.kexin.com.cn Max Power Dissipation - (Watts) Thermal Resistance (°C/W) 4 D = 1 3 2 1 0 0 20 40 60 80 100 120 140 T - Ambient Temperature (°C) Derating curve 160 Transistors SMD Type PNP Transistors FZT1149A (KZT1149A) ■ Typical Characterisitics 1.0 1.0 +25°C IC/IB=100 0.8 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.6 VCE(sat) - (V) VCE(sat) - (V) 0.8 0.4 0.4 0.2 0.2 0 -55°C +25°C +100°C 0.6 1m 10m 100m 1 10 0 100 1m IC - Collector Current (A) V CE(sat) v I C +100°C +25°C -55°C 500 100 1.2 VBE(sat) - (V) h FE - Typical Gain 10 IC/IB=100 250 1m 10m 100m 1 10 0.8 -55°C +25°C +100°C 0.4 0 100 1m IC - Collector Current (A) h FE v I C 1.2 100m 1 10 100 10 IC - Collector Current (A) VCE=2V 0.4 -55°C +25°C +100°C 1m 10m IC - Collector Current (A) V BE(sat) v I C 0.8 VBE(on) - (V) 1 1.6 VCE=2V 0 100m IC - Collector Current (A) V CE(sat) v I C 750 0 10m 10m 100m 1 10 IC - Collector Current (A) V BE(on) v I C 100 1 DC 1s 100ms 10ms 1ms 100us 100m 10m 100m 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area www.kexin.com.cn 3