Hamamatsu G1962 Gap photodiode Datasheet

PHOTODIODE
GaP photodiode
G1961, G1962, G1963
Schottky type
Features
Applications
l Low dark current
l High UV sensitivity
l Analytical instruments
l UV detection
■ General ratings / Absolute maximum ratings
Type No.
G1961
G1962
G1963
Dimensional
outline/
Window
material
➀/Q *
➁/Q
➂/Q
Package
Active area
size
Effective
active
area
TO-18
TO-5
TO-8
(mm)
1.1 × 1.1
2.3 × 2.3
4.6 × 4.6
(mm2)
1.0
5.2
21
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
VR Max.
(V)
(°C)
(°C)
5
-10 to +60
-20 to +70
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral Peak
response sensitivity
range wavelength
λ
λp
(nm)
(nm)
G1961
G1962
190 to 550 440
G1963
* Window material Q: quartz glass
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
lx
Hg
line 400 nm
Min.
254 nm
(µA)
0.04
0.12 0.03
0.1 0.23
0.75
λp
Dark
current
ID
Max.
Typ. V4=10 mV
(µA) (pA)
0.05 2.5
0.3
5
0.9 10
Terminal
Temp.
Rise time
Shunt
capacitance
coefficient
tr
resistance
Ct
of
VR=0 V
Rsh
VR=0 V
ID
VR=10 mV
RL=1 kΩ
TCID
f=10 kHz
V4=1 V
(pA) (times/°C)
25
50
1.11
100
(µs)
5
10
30
NEP
Min. Typ.
(pF) (GΩ) (GΩ) (W/Hz1/2)
400
4
40 5.4 × 10-15
1500
2
20 7.6 × 10-15
5000
1
1 1.1 × 10-14
G1961, G1962, G1963
GaP photodiode
■Spectral response
■Photo sensitivity temperature characteristic
(Typ. Ta=25 ˚C)
(Typ.)
+1.5
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
0.2
0.15
0.1
0.05
0
190
400
600
+1.0
+0.5
0
-0.5
190
800
WAVELENGTH (nm)
400
600
800
WAVELENGTH (nm)
KGPDB0014EA
■Rise time vs. load resistance
KGPDB0017EB
■Dark current vs. reverse voltage
(Typ. Ta=25 ˚C, VR=0 V)
10 ms
(Typ. Ta=25 ˚C)
1 nA
G1963
1 ms
100 pA
DARK CURRENT
RISE TIME
G1962
100 µs
G1961
10 µs
10 pA
G1962
1 pA
1 µs
100 ns 2
10
G1963
G1961
3
10
4
10
5
10
6
10
LOAD RESISTANCE (Ω)
100 fA
0.001
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KGPDB0015EA
KGPDB0016EA
GaP photodiode
G1961, G1962, G1963
■Short circuit current linearity
■Shunt resistance vs. ambient temperature
(Typ. VR=10 mV)
100
10 TΩ
(Typ. Ta=25 ˚C, A light source fully illuminated)
10-2
RL=100 Ω
OUTPUT CURRENT (A)
SHUNT RESISTANCE
1 TΩ
G1961
100 GΩ
G1962
10 GΩ
G1963
1 GΩ
10
-4
10
-6
10
-8
10
-10
10
-12
10
-14
100 MΩ
10 MΩ
-20
0
+40
+20
+60
+80
DEPENDENT ON NEP
10-16 -16
-14
10
10
10-12 10-10 10-8 10-6
AMBIENT TEMPERATURE (˚C)
10-4
10-2
100
INCIDENT LIGHT LEVEL (lx)
KGPDB0018EA
KGPDB0008EA
■Dimensional outlines (unit: mm)
➀ G1961
➁ G1962
4.1 ± 0.2
2.9
3.55 ± 0.2
8.1 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
20
0.45
LEAD
4.7 ± 0.1
WINDOW
5.9 ± 0.1
2.4
PHOTOSENSITIVE
SURFACE
9.1 ± 0.2
5.4 ± 0.2
14
WINDOW
3.0 ± 0.2
5.08 ± 0.2
2.54 ± 0.2
CONNECTED
TO CASE
CONNECTED
TO CASE
KGPDA0005EA
KGPDA0006EA
GaP photodiode
G1961, G1962, G1963
➂ G1963
13.9 ± 0.2
5.0 ± 0.2
12.35 ± 0.1
1.9
PHOTOSENSITIVE
SURFACE
0.45
LEAD
15
WINDOW
10.5 ± 0.1
7.5 ± 0.2
INDEX MARK ( 1.4)
CONNECTED
TO CASE
KGPDA0007EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KGPD1007E01
Apr. 2001 DN
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