PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification ■ General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 Dimensional outline/ Window material * ➀/K ➁/K ➂/K ➃/R ➄/R ➅/L ➆/R Package Active area size Effective active area TO-18 TO-5 TO-8 Ceramic Ceramic TO-18 Plastic (mm) 1.3 × 1.3 2.7 × 2.7 5.6 × 5.6 1.3 × 1.3 5.6 × 5.6 1.3 × 1.3 1.3 × 1.3 (mm2) 1.66 7.26 29.3 1.66 29.3 1.66 1.66 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -30 to +80 -40 to +85 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. Spectral Peak response sensitivity range wavelength λ λp (nm) G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 λp GaP LED 560 nm 0.3 0.29 (nm) 300 to 680 640 Terminal Temp. Dark Short circuit Rise time capacitance coefficient current current tr of Ct Isc ID VR=0 V D I R=0 V V Max. RL=1 kΩ He-Ne 100 lx TCID f=10 kHz laser Min. Typ. V4=10 mV V4=1 V 633 nm (µA) (µA) (pA) (pA) (times/°C) (µs) (pF) 1 300 0.12 0.15 1 10 4 1400 0.45 0.6 2.5 25 15 6000 2 2.5 5 50 1 300 0.29 0.12 0.15 1 10 1.07 15 6000 2 2.5 5 50 1 300 0.75 0.95 1 10 1 300 0.15 0.18 1 10 Photo sensitivity S (A/W) * Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating Shunt resistance Rsh VR=10 mV NEP Min. Typ. (GΩ) (GΩ) (W/Hz1/2) 10 80 1.5 × 10-15 4 30 2.5 × 10-15 2 15 3.5 × 10-15 10 80 1.5 × 10-15 2 15 3.5 × 10-15 10 80 1.5 × 10-15 10 80 1.5 × 10-15 GaAsP photodiode ■Spectral response ■Photo sensitivity temperature characteristic (Typ. Ta=25 ˚C) 0.5 (Typ.) TEMPERATURE COEFFICIENT (%/˚C) +1.5 0.4 PHOTO SENSITIVITY (A/W) Diffusion type 0.3 0.2 0.1 0 200 400 600 +1.0 +0.5 0 -0.5 200 800 WAVELENGTH (nm) 400 600 800 WAVELENGTH (nm) KGPDB0019EA ■Rise time vs. load resistance KGPDB0020EA ■Dark current vs. reverse voltage (Typ. Ta=25 ˚C, VR=0 V) 10 ms (Typ. Ta=25 ˚C) 1 nA G1117, G1120 1 ms 100 pA DARK CURRENT RISE TIME G1116 100 µs 10 µs G1115, G1118 G3067, G2711-01 G1117, G1120 10 pA G1116 1 pA 1 µs G1115, G1118 G2711-01, G3067 100 ns 2 10 3 10 10 4 5 10 100 fA 0.001 6 10 0.01 0.1 1 10 REVERSE VOLTAGE (V) LOAD RESISTANCE (Ω) KGPDB0021EA ■Shunt resistance vs. ambient temperature KGPDB0022EA ■Short circuit current linearity (Typ. VR=10 mV) 100 10 TΩ G1115, G1118 G3067, G2711-01 10-2 G1116 OUTPUT CURRENT (A) SHUNT RESISTANCE 1 TΩ 100 GΩ 10 GΩ 1 GΩ G1117, G1120 (Typ. Ta=25 ˚C, A light source fully illuminated) RL=100 Ω -4 10 10-6 10-8 10 -10 10-12 100 MΩ 10-14 10 MΩ -20 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) Refer to NEP value in characteristic table. 10-16 -16 -14 -12 -10 -8 -6 -4 -2 0 10 10 10 10 10 10 10 10 10 INCIDENT LIGHT LEVEL (lx) KGPDB0023EA KGPDB0008EA GaAsP photodiode Diffusion type ■Dimensional outlines (unit: mm) ➀ G1115 9.1 ± 0.2 2.9 20 0.45 LEAD 14 0.45 LEAD 8.1 ± 0.1 PHOTOSENSITIVE SURFACE 2.4 PHOTOSENSITIVE SURFACE WINDOW 5.9 ± 0.1 4.1 ± 0.2 5.4 ± 0.2 4.7 ± 0.1 3.55 ± 0.2 WINDOW 3.0 ± 0.2 ➁ G1116 5.08 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. KGPDA0012EA ➂ G1117 ➃ G1118 13.9 ± 0.2 CATHODE TERMINAL MARK 6.0 ± 0.2 5.0 ± 0.2 12.35 ± 0.1 5.0 ± 0.2 1.5 ± 0.2 PHOTOSENSITIVE SURFACE 0.6 1.9 PHOTOSENSITIVE SURFACE 0.45 LEAD ACTIVE AREA 15 WINDOW 10.5 ± 0.1 KGPDA0013EA 14 7.5 ± 0.2 MARK ( 1.4) 0.45 LEAD 3.0 ± 0.2 CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KGPDA0014EA KGPDA0002EA GaAsP photodiode ➅ G3067 10.1 ± 0.1 5.4 ± 0.2 4.65 ± 0.1 0.3 0.65 4.5 ± 0.2 PHOTOSENSITIVE SURFACE 2.4 2.0 ± 0.1 8.9 ± 0.1 ACTIVE AREA 2.15 ± 0.3 ➄ G1120 Diffusion type 10.5 14 0.45 LEAD 0.5 LEAD 2.54 ± 0.2 9.2 ± 0.3 7.4 ± 0.2 8.0 ± 0.3 ANODE TERMINAL MARK CONNECTED TO CASE Coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KGPDA0008EA KGPDA0009EA ➆ G2711-01 5.5 2.54 3˚ 10˚ 5.6 ± 0.2 (INCLUDING BURR) 5.4 0.7 0.5 4.6 ± 0.2 (INCLUDING BURR) 4.5 0.6 1.0 5.75 ± 0.2 PHOTOSENSITIVE SURFACE 2.0 4.5 ± 0.4 5˚ ANODE CATHODE NC CATHODE 3˚ 0.25 7.5 ± 5˚ KGPDA0003EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1002E01 Apr. 2001 DN