Hamamatsu G5851-203 Ingaas pin photodiode Datasheet

PHOTODIODE
InGaAs PIN photodiode
G8421/G8371/G5851 series
Long wavelength type
Features
Applications
l Long cut-off wavelength: 1.9 µm
l Optical power meter
l 3-pin TO-18 package: low price
l Gas analyzer
l Thermoelectrically cooled TO-18 package: low dark current l NIR (near infrared) photometry
l Active area: φ0.3 to φ3 mm
■ Specifications / Absolute maximum ratings
Type No.
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23
Dimensional
outline/
Package
Window
material
➀
TO-18
➁
TO-5
➂
TO-8
➃
TO-8
Active
area
Cooling
(mm)
f0.3
f0.5
f1
f3
f0.3
f1
f3
f0.3
f1
f3
Non-cooled
One-stage
TE-cooled
Two-stage
TE-cooled
Absolute maximum ratings
Thermistor TE-cooler Reverse Operating
Storage
power
allowable voltage temperature temperature
dissipation
Topr
current
Tstg
VR
(mW)
(A)
(V)
(°C)
(°C)
-
Type No.
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23
(°C)
(µm)
25
0.9 to 1.9
-10
0.9 to 1.87
-20
0.9 to 1.85
(µm)
(A/W)
0.2
1.75
1.1
-55 to +125
-40 to +70
-55 to +85
1.0
Cut-off
frequency
fc
VR=1 V
RL=50 W
-3 dB
Max.
(MHz)
(nA)
300
100
500
80
1000
40
20000
3
30
100
100
40
2000
3
15
100
50
40
1000
3
Dark current
ID
VR=1 V
Typ.
(nA)
30
50
100
2000
3
10
200
1.5
5
100
-40 to +85
2
1.5
■ Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Spectral
Peak
Photo
Condition
response sensitivity sensitivity
range
S
wavelength
Element
l
lp
l=lp
temperature
-
Terminal
Shunt
capacitance
resistance
Ct
Rsh
VR=1 V
V4=10 mV
f=1 MHz
(pF)
8
20
80
800
8
80
800
8
80
800
(MW)
1.5
1
0.5
0.05
15
5
0.5
35
10
1
D*
l=lp
NEP
l=lp
(cm·Hz1/2/W) (W/Hz1/2)
9 × 10-14
1.5 × 10-13
5 × 1011
2 × 10-13
8 × 10-13
3 × 10-14
12
1.5 × 10 6 × 10-14
2 × 10-13
2 × 10-14
12
2.5 × 10 4 × 10-14
1.5 × 10-13
1
InGaAs PIN photodiode
■ Spectral response
G8421/G8371/G5851 series
■ Photo sensitivity temperature characteristic
(Typ.)
(Typ.)
1.4
TEMPERATURE COEFFICIENT (%/˚C)
2
PHOTO SENSITIVITY (A/W)
1.2
T=25 ˚C
1.0
0.8
0.6
T= -10 ˚C
0.4
0.2
0
0.8
T= -20 ˚C
1.0
1.2
1.4
1.6
1.8
2.0
1
0
-1
0.8
2.2
1
1.2
1.4
WAVELENGTH (µm)
1.6
1.8
2
2.2 2.4
2.6
WAVELENGTH (µm)
KIRDB0221EA
KIRDB0208EA
■ Dark current vs. reverse voltage
Non-cooled type
TE-cooled type
(Typ. Ta=25 ˚C)
10 µA
(Typ.)
1 µA
G5851-13 (T= -10 ˚C)
G5851-23 (T= -20 ˚C)
G8371-03
100 nA
DARK CURRENT
DARK CURRENT
1 µA
G8371-01
100 nA
10 nA
G8421-03
G8421-05
G5851-21
(T= -20 ˚C) G5851-11 (T= -10 ˚C)
10 nA
1 nA
G5851-103 (T= -10 ˚C)
G5851-203 (T= -20 ˚C)
1 nA
0.01
0.1
1
100 pA
0.01
10
0.1
REVERSE VOLTAGE (V)
1
10
REVERSE VOLTAGE (V)
KIRDB0232EB
■ Terminal capacitance vs. reverse voltage
KIRDB0223EA
■ Shunt resistance vs. element temperature
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
(Typ. VR=10 mV)
10 MΩ
G8421-03
G5851-103/-203
1 MΩ
1 nF
SHUNT RESISTANCE
TERMINAL CAPACITANCE
G8371-03
G5851-13/-23
G8371-01
G5851-11/-21
100 pF
10 pF
G8421-05
1
10
G8371-01
G5851-11/-21
10 kΩ
G8371-03
G5851-13/-23
100 Ω
-40
-20
0
20
40
60
80
90
100
ELEMENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KIRDB0233EA
2
100 kΩ
1 kΩ
G8421-03
G5851-103/-203
1 pF
0.1
G8421-05
KIRDB0234EA
InGaAs PIN photodiode
■ Thermistor temperature characteristic
■ Cooling characteristics of TE-cooler
(Typ.)
6
40
ELEMENT TEMPERATURE (˚C)
RESISTANCE (Ω)
10
105
104
10
G8421/G8371/G5851 series
3
20
ONE-STAGE
TE-COOLED TYPE
0
-20
TWO-STAGE
-40 TE-COOLED TYPE
-60
-40
-20
0
20
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
0
0.4
0.8
1.2
1.6
CURRENT (A)
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
KIRDB0231EA
■ Current vs. voltage characteristics of TE-cooler
1.6
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.4
CURRENT (A)
1.2
ONE-STAGE
TE-COOLED TYPE
1.0
0.8
0.6
TWO-STAGE
TE-COOLED TYPE
0.4
0.2
0
0
0.5
1.0
1.5
VOLTAGE (V)
KIRDB0115EA
3
InGaAs PIN photodiode
G8421/G8371/G5851 series
■ Dimensional outlines (unit: mm)
➀ G8421-03/-05, G8371-01
➁ G8371-03
9.2 ± 0.2
5.4 ± 0.2
2.5 ± 0.2
4.2 ± 0.2
18 MIN.
0.15 MAX.
0.45
LEAD
0.4 MAX.
0.45
LEAD
8.1 ± 0.1
WINDOW
5.9 ± 0.1
PHOTOSENSITIVE
SURFACE
13 MIN.
PHOTOSENSITIVE
SURFACE
3.6 ± 0.2
WINDOW
3.0 ± 0.1
2.7 ± 0.2
4.7 ± 0.1
5.1 ± 0.3
2.5 ± 0.2
1.5 MAX.
CASE
CASE
KIRDA0150EA
➂ G5851-103/-11/-13
KIRDA0151EA
➃ G5851-203/-21/-23
12 MIN.
0.45
LEAD
PHOTOSENSITIVE
SURFACE
10 ± 0.2
12 MIN.
PHOTOSENSITIVE
SURFACE
6.4 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
4.4 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
6.7 ± 0.2
15.3 ± 0.2
15.3 ± 0.2
0.45
LEAD
5.1 ± 0.2
10.2 ± 0.2
10.2 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
5.1 ± 0.2
KIRDA0029EB
KIRDA0031EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KIRD1046E02
Jan.2003 DN
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