Hamamatsu G5853-103 Long wavelength type(cut-off wavelength: 2.55 to 2.6 ..m) Datasheet

InGaAs PIN photodiodes
G8423/G8373/G5853 series
Long wavelength type
(Cut-off wavelength: 2.55 to 2.6 —m)
Features
Applications
Cut-off wavelength: 2.55 to 2.6 —m
Gas analysis
3-pin TO-18 package: low price
Spectrophotometer
Thermoelectrically cooled TO-8 package: low dark current
NIR (near infrared) photometry
Active area: I0.3 to I3 mm
Accessories (Optional)
Preamp for InGaAs PIN photodiode
C4159-03
Heatsink for one-stage TE-cooled type
A3179
Heatsink for two-stage TE-cooled type
A3179-01
Temperature controller for TE-cooled type C1103-04
Speci¿cations / Absolute maximum ratings
Type No.
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
Dimensional
outline
Package
Cooling

TO-18

TO-5
‘
TO-8
One-stage
TE-cooled
TO-8
Two-stage
TE-cooled
’
Active
area
(mm)
I0.3
I0.5
I1
I3
I0.3
I1
I3
I0.3
I1
I3
Non-cooled
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler
Reverse
Operating
allowable
voltage
temperature
current
VR
Topr
(A)
(V)
(°C)
-
-
Storage
temperature
Tstg
(°C)
-40 to +85
-55 to +125
-40 to +70
-55 to +85
2
1.5
0.2
1.0
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Condition
Type No.
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
Element
temperature
Spectral
response
range
O
Peak
sensitivity
wavelength
Op
Photo
sensitivity
S
O=Op
(°C)
(—m)
(—m)
Min.
Typ.
(A/W) (A/W)
25
1.2 to 2.6
-10
1.2 to 2.57
-20
1.2 to 2.55
2.3
0.9
1.3
Dark current
ID
VR=1 V
Typ.
(—A)
2
5
15
150
0.2
1.5
15
0.1
0.8
7.5
Max.
(—A)
20
50
75
1500
2
7.5
150
1
4
75
Cut-off
frequency
fc
VR=1 V
RL=50 :
-3 dB
(MHz)
60
50
15
1.5
60
15
1.5
60
15
1.5
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
(pF)
40
60
200
1800
40
200
1800
40
200
1800
(k:)
30
15
3
0.3
300
30
3
600
60
6
D
O=Op
NEP
O=Op
(cm·Hz1/2/W)
(W/Hz1/2)
7 × 10-13
1 × 10-12
2 × 10-12
8 × 10-12
3 × 10-13
7 × 10-13
2 × 10-12
2 × 10-13
5 × 10-13
1.8 × 10-12
5 × 1010
1 × 1011
2 × 1011
The G8423/G8373/G5853 series may be damaged by electrostatic discharge, etc. Be carefull when using the G8423/G8373/G5853 series.
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1
InGaAs PIN photodiodes
G8423/G8373/G5853 series
Spectral response
Photo sensitivity temperature characteristic
(Typ.)
1.4
(Typ.)
2
Temperature coefficient (%/°C)
Photo sensitivity (A/W)
1.2
1.0
0.8
T=-20 °C
0.6
T=-10 °C
0.4
0.2
1
0
T=25 °C
0
0.8 1.0
1.2 1.4 1.6
-1
0.8 1.0 1.2
1.8 2.0 2.2 2.4 2.6 2.8
Wavelength (μm)
1.4 1.6 1.8 2.0
2.2 2.4
2.6 2.8
Wavelength (μm)
KIRDB0216EB
KIRDB0206EA
Dark current vs. reverse voltage
Non-cooled type
TE-cooled type
(Typ. Ta=25 °C)
1 mA
G8373-03
G5853-13 (T=-10 °C)
100 μA
10 μA
G8373-01
Dark current
Dark current
(Typ.)
100 μA
G8423-05
10 μA
1 μA
G5853-23 (T=-20 °C)
1 μA
G5853-11 (T=-10 °C)
G5853-21 (T=-20 °C)
100 nA
G8423-03
G5853-103 (T=-10 °C)
G5853-203 (T=-20 °C)
100 nA
0.01
0.1
1
10
Reverse voltage (V)
10 nA
0.01
0.1
1
10
Reverse voltage (V)
KIRDB0238EA
KIRDB0218EA
2
InGaAs PIN photodiodes
G8423/G8373/G5853 series
Terminal capacitance vs. reverse voltage
Shunt resistance vs. element temperature
(Typ. Ta=25 °C, f=1 MHz)
10 nF
(Typ. VR=10 mV)
1 MΩ
G8423-03
G5853-103/-203
G8373-03
G5853-13/-23
100 kΩ
1 nF
Shunt resistance
Terminal capacitance
G8423-05
G8373-01
G5853-11/-21
G8423-05
100 pF
G8373-01
G5853-11/-21
10 kΩ
1 kΩ
100 Ω
G8373-03
G5853-13/-23
G8423-03
G5853-103/-203
10 pF
0.1
1
10 Ω
-40
10
-20
Reverse voltage (V)
0
20
40
60
80
90
Element temperature (°C)
KIRDB0239EA
KIRDB0240EA
Thermistor temperature characteristic
105
104
-30
-20
-10
0
10
20
30
Element temperature (°C)
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
40
Element temperature (°C)
Resistance (Ω)
Cooling characteristics of TE-cooler
(Typ.)
106
103
-40
100
20
One-stage
TE-cooled type
0
-20
Two-stage
TE-cooled type
-40
-60
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Current (A)
KIRDB0116EA
KIRDB0231EA
3
InGaAs PIN photodiodes
G8423/G8373/G5853 series
Current vs. voltage (TE-cooler)
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
1.6
1.4
One-stage
TE-cooled type
Current (A)
1.2
1.0
0.8
0.6
Two-stage
TE-cooled type
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Voltage (V)
KIRDB0115EB
Dimensional outlines (unit: mm)
 G8423-03/-05, G8373-01
 G8373-03
9.2 ± 0.2
5.4 ± 0.2
0.45
lead
4.2 ± 0.2
0.45
lead
2.5 ± 0.2
13 Min.
Photosensitive
surface
18 Min.
0.15 Max.
3.6 ± 0.2
A
Photosensitive
surface
Window
5.9 ± 0.1
0.4 Max.
8.1 ± 0.1
4.7 ± 0.1
Window
3.0 ± 0.1
5.1 ± 0.3
2.5 ± 0.2
1.5 Max.
G8423-03/-05 G8373-01
A
2.6 ± 0.2
Case
2.7 ± 0.2
Case
KIRDA0205EA
KIRDA0151EA
4
InGaAs PIN photodiodes
G8423/G8373/G5853 series
‘ G5853-103/-11/-13
’ G5853-203/-21/-23
15.3 ± 0.2
15.3 ± 0.2
A
Photosensitive
surface
12 Min.
0.45
lead
0.45
lead
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
Window
10 ± 0.2
12 Min.
Photosensitive
surface
6.4 ± 0.2
A
Window
10 ± 0.2
10 ± 0.2
14 ± 0.2
14 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
Detector (anode)
Detector (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
G5853-103 G5853-11/-13
A
4.3 ± 0.2
4.4 ± 0.2
KIRDA0206EA
Detector (anode)
Detector (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
G5853-203 G5853-21/-23
A
6.6 ± 0.2
6.7 ± 0.2
KIRDA0207EA
Information described in this material is current as of June, 2011. Product specifications are subject to change without prior notice due to improvements or
other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1048E07 Jun. 2011 DN
5
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