Hamamatsu G7096-01 Ultrafast msm photodetector Datasheet

ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs)
CONNECTION EXAMPLES
G4176
G4176-01
G7096
G7096-01
PRELIMINARY DATA
ULTRAFAST MSM PHOTODETECTORS
G4176 SERIES (GaAs)
G7096 SERIES (InGaAs)
Output
Optical Input
Electric Output
G4176
(G7096)
Ultrafast response of several tens picosecond
Case Lead
100 Ω
BIAS-TEE
Electric Output
Optical Input
BIAS CASE
Coaxial Connector
G4176-01
(G7096-01)
10 nF
BIAS
10 kΩ
Power Supply
Power Supply
- (or +)
+ (or -)
+ (or -)
- (or +)
FEATURES
Ultrafast response
G4176 : tr , tf = 30 ps (Typ.)
G7096 : tr = 40 ps (Typ.)
Low dark current
G4176 : 100 pA (Ta=25 °C)
Large photosensitive area
200 µm
DIMENSIONAL OUTLINES (Unit : mm)
G4176
G4176-01
G7096
G7096-01
3.6
12 min.
3.0 2.0
9.6
1.2
φ5.4
φ4.7
SENSITIVE
SURFACE
2.3
G4176-01
G7096-01
DESCRIPTION
10
φ8.2
G4176
G7096
Optical high-speed waveform measurements
Optical communications
CHIP
CHIP
SENSITIVE
SURFACE
APPLICATIONS
1/4-36UNS-2B
φ7.9
φ0.45LEAD
CASE
HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses.
The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark
current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps.
Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than
other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM
Photodetectors are suited for measurements of optical high-speed waveform and optical communications.
There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and
the polarity of an output signal depends on its connection.
Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial
metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G417601 & G7096-01 is a TO-18, which is very common.
An optical fiber or connector input types are available as a custom option. Contact your local representative for
more information.
BIAS / OUTPUT*
OUTPUT/BIAS*
OUTPUT / BIAS*
CASE
(BOTTOM VIEW)
(BOTTOM VIEW)
*Both polarities of the bias voltage are available.
http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept.
5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan,
Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: [email protected]
U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: [email protected]
Cat. No. LPRD1022E01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: [email protected]
JAN 2003 IP
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.
ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs)
G4176 SERIES
G7096 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Item
Symbol
Maximum Bias Voltage
Vb
Condition
Value
10
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V)
Unit
Φ
CW to Pulsed Light
Pulse width
Pulse width
Radiant sensitivity
S
mW
Dark Current
Id
NEP*
5
mW
-40 to +85
°C
G4176
-40 to +100
°C
G4176-01
1ns
Operating Temperature Top(a)
Storage Temperature
50
1ns
Tstg
Symbol
Condition
V
Maximum Light Input
Pulsed Light
Item
Value
λ = 850 nm
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Item
Symbol
Maximum Bias Voltage
Vb
Unit
Min.
Typ.
Max.
0.2
0.3
-
A/W
-
100
300
pA
0.2 X 10-15 3 X 10-15
-
0.2 X 10-15 4 X 10-15
-
W/Hz1/2
15
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=10V)
Unit
Φ
Pulsed Light
Pulse width
Tstg
S
mW
Dark Current
Id
NEP*
2
mW
°C
G7096
-40 to +100
°C
G7096-01
Terminal Capacitance
GENERAL CHARACTERISTICS (Ta=25°C)
Item
G4176**
Symbol
Condition
Value
Unit
Spectral Response Range
λ
Vb = 7 V
450 to 870
nm
Peak Response Wavelength
λp
Vb = 7 V
850
nm
Effective Sensitive Area
A
0.2
Chip Size
1
0.2
mm2
1
mm2
Package
G4176
G4176-01
TO-18
-
Ct
-
0.3
0.5
0.4
pF
tr
10 to 90 %
G4176-01
-
30
50
Item
40
ps
80
tf
90 to 10 %
G4176-01
-
30
40
-
50
80
ps
Value
Unit
Spectral Response Range
λ
Vb = 10 V
850 to 1650
nm
Peak Response Wavelength
λp
Vb = 10 V
1500
nm
Effective Sensitive Area
A
0.2
1
0.2
mm2
1
mm2
Package
(Unified with SMA connector)
TO-18
G4176-01
G7096
(Including time response of light source, assembly circuit and oscilloscope)
(Including time response of light source, bias-tee and oscilloscope)
(Vb = 7 V)
G7096
(Vb = 7 V)
A/W
20
µA
0.2 X 10-10 2 X 10-10
-
W/Hz1/2
0.2 X 10-10 3 X 10-10
-
-
0.7
0.8
-
0.9
1.0
-
40
60
-
80
100
-
120
160
-
160
200
pF
10 to 90 %
ps
tf
90 to 10 %
ps
1.1
(Including time response of light source, assembly circuit and oscilloscope)
(Vb = 10 V)
1.1
0.8
0.8
0.6
0.5
0.4
0.7
0.6
0.5
0.4
Output (arb. unit)
0.8
Output (arb. unit)
0.8
Output (arb. unit)
0.9
0.7
0.7
0.6
0.5
0.4
0.7
0.6
0.5
0.4
0.3
0.3
0.3
0.2
0.2
0.2
0.2
0.1
0.1
0.1
0.1
0
0
0
0
0.3
Time (0.1ns/div)
Time (0.1ns/div)
Figure 2: Spectral Response
Time (0.1ns/div)
Time (0.1ns/div)
Figure 4: Spectral Response
(Vb = 7 V)
10-2
900
1000
(Vb = 10 V)
100
Radiant Sensitivity (A/W)
10-1
10-1
10-2
10-3
0.6
(Vb = 10 V)
1.1
1.0
Wa elength (nm)
-
5
G7096-01
0.9
800
0.4
-
*Noise Equivalent Power
**Value on Chip
1.0
700
tr
G7096-01
0.9
600
Ct
G7096-01
1.0
500
0.2
Max.
Fall Time
0.9
400
Typ.
Rise Time
1.0
10-3
300
λ = 1.3 µm
Unit
Min.
Figure 3: Optical Pulse Response
(Including time response of light source, bias-tee and oscilloscope)
100
λ = 1.3 µm
G7096-01
G7096
TO-5
G7096
G4176
1.1
Output (arb. unit)
Condition
G7096-01
*Noise Equivalent Power
**Value on Chip
G7096**
Symbol
Chip Size
Fall Time
Figure 1: Optical Pulse Response
Radiant Sensitivity (A/W)
GENERAL CHARACTERISTICS (Ta=25°C)
0.6
Rise Time
G4176
TO-5
(Unified with SMA connector)
Value
Condition
Terminal Capacitance
G4176-01
G4176
Symbol
Radiant sensitivity
-40 to +85
1ns
Pulse width
Operating Temperature Top(a)
Storage Temperature
10
1ns
Item
V
Maximum Light Input
CW to Pulsed Light
λ = 850 nm
Value
Condition
0.8
1.0
W
1.2
l
1.4
th (µ )
1.6
1.8
ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs)
G4176 SERIES
G7096 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Item
Symbol
Maximum Bias Voltage
Vb
Condition
Value
10
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V)
Unit
Φ
CW to Pulsed Light
Pulse width
Pulse width
Radiant sensitivity
S
mW
Dark Current
Id
NEP*
5
mW
-40 to +85
°C
G4176
-40 to +100
°C
G4176-01
1ns
Operating Temperature Top(a)
Storage Temperature
50
1ns
Tstg
Symbol
Condition
V
Maximum Light Input
Pulsed Light
Item
Value
λ = 850 nm
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Item
Symbol
Maximum Bias Voltage
Vb
Unit
Min.
Typ.
Max.
0.2
0.3
-
A/W
-
100
300
pA
0.2 X 10-15 3 X 10-15
-
0.2 X 10-15 4 X 10-15
-
W/Hz1/2
15
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=10V)
Unit
Φ
Pulsed Light
Pulse width
Tstg
S
mW
Dark Current
Id
NEP*
2
mW
°C
G7096
-40 to +100
°C
G7096-01
Terminal Capacitance
GENERAL CHARACTERISTICS (Ta=25°C)
Item
G4176**
Symbol
Condition
Value
Unit
Spectral Response Range
λ
Vb = 7 V
450 to 870
nm
Peak Response Wavelength
λp
Vb = 7 V
850
nm
Effective Sensitive Area
A
0.2
Chip Size
1
0.2
mm2
1
mm2
Package
G4176
G4176-01
TO-18
-
Ct
-
0.3
0.5
0.4
pF
tr
10 to 90 %
G4176-01
-
30
50
Item
40
ps
80
tf
90 to 10 %
G4176-01
-
30
40
-
50
80
ps
Value
Unit
Spectral Response Range
λ
Vb = 10 V
850 to 1650
nm
Peak Response Wavelength
λp
Vb = 10 V
1500
nm
Effective Sensitive Area
A
0.2
1
0.2
mm2
1
mm2
Package
(Unified with SMA connector)
TO-18
G4176-01
G7096
(Including time response of light source, assembly circuit and oscilloscope)
(Including time response of light source, bias-tee and oscilloscope)
(Vb = 7 V)
G7096
(Vb = 7 V)
A/W
20
µA
0.2 X 10-10 2 X 10-10
-
W/Hz1/2
0.2 X 10-10 3 X 10-10
-
-
0.7
0.8
-
0.9
1.0
-
40
60
-
80
100
-
120
160
-
160
200
pF
10 to 90 %
ps
tf
90 to 10 %
ps
1.1
(Including time response of light source, assembly circuit and oscilloscope)
(Vb = 10 V)
1.1
0.8
0.8
0.6
0.5
0.4
0.7
0.6
0.5
0.4
Output (arb. unit)
0.8
Output (arb. unit)
0.8
Output (arb. unit)
0.9
0.7
0.7
0.6
0.5
0.4
0.7
0.6
0.5
0.4
0.3
0.3
0.3
0.2
0.2
0.2
0.2
0.1
0.1
0.1
0.1
0
0
0
0
0.3
Time (0.1ns/div)
Time (0.1ns/div)
Figure 2: Spectral Response
Time (0.1ns/div)
Time (0.1ns/div)
Figure 4: Spectral Response
(Vb = 7 V)
10-2
900
1000
(Vb = 10 V)
100
Radiant Sensitivity (A/W)
10-1
10-1
10-2
10-3
0.6
(Vb = 10 V)
1.1
1.0
Wa elength (nm)
-
5
G7096-01
0.9
800
0.4
-
*Noise Equivalent Power
**Value on Chip
1.0
700
tr
G7096-01
0.9
600
Ct
G7096-01
1.0
500
0.2
Max.
Fall Time
0.9
400
Typ.
Rise Time
1.0
10-3
300
λ = 1.3 µm
Unit
Min.
Figure 3: Optical Pulse Response
(Including time response of light source, bias-tee and oscilloscope)
100
λ = 1.3 µm
G7096-01
G7096
TO-5
G7096
G4176
1.1
Output (arb. unit)
Condition
G7096-01
*Noise Equivalent Power
**Value on Chip
G7096**
Symbol
Chip Size
Fall Time
Figure 1: Optical Pulse Response
Radiant Sensitivity (A/W)
GENERAL CHARACTERISTICS (Ta=25°C)
0.6
Rise Time
G4176
TO-5
(Unified with SMA connector)
Value
Condition
Terminal Capacitance
G4176-01
G4176
Symbol
Radiant sensitivity
-40 to +85
1ns
Pulse width
Operating Temperature Top(a)
Storage Temperature
10
1ns
Item
V
Maximum Light Input
CW to Pulsed Light
λ = 850 nm
Value
Condition
0.8
1.0
W
1.2
l
1.4
th (µ )
1.6
1.8
ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs)
CONNECTION EXAMPLES
G4176
G4176-01
G7096
G7096-01
PRELIMINARY DATA
ULTRAFAST MSM PHOTODETECTORS
G4176 SERIES (GaAs)
G7096 SERIES (InGaAs)
Output
Optical Input
Electric Output
G4176
(G7096)
Ultrafast response of several tens picosecond
Case Lead
100 Ω
BIAS-TEE
Electric Output
Optical Input
BIAS CASE
Coaxial Connector
G4176-01
(G7096-01)
10 nF
BIAS
10 kΩ
Power Supply
Power Supply
- (or +)
+ (or -)
+ (or -)
- (or +)
FEATURES
Ultrafast response
G4176 : tr , tf = 30 ps (Typ.)
G7096 : tr = 40 ps (Typ.)
Low dark current
G4176 : 100 pA (Ta=25 °C)
Large photosensitive area
200 µm
DIMENSIONAL OUTLINES (Unit : mm)
G4176
G4176-01
G7096
G7096-01
3.6
12 min.
3.0 2.0
9.6
1.2
φ5.4
φ4.7
SENSITIVE
SURFACE
2.3
G4176-01
G7096-01
DESCRIPTION
10
φ8.2
G4176
G7096
Optical high-speed waveform measurements
Optical communications
CHIP
CHIP
SENSITIVE
SURFACE
APPLICATIONS
1/4-36UNS-2B
φ7.9
φ0.45LEAD
CASE
HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses.
The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark
current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps.
Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than
other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM
Photodetectors are suited for measurements of optical high-speed waveform and optical communications.
There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and
the polarity of an output signal depends on its connection.
Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial
metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G417601 & G7096-01 is a TO-18, which is very common.
An optical fiber or connector input types are available as a custom option. Contact your local representative for
more information.
BIAS / OUTPUT*
OUTPUT/BIAS*
OUTPUT / BIAS*
CASE
(BOTTOM VIEW)
(BOTTOM VIEW)
*Both polarities of the bias voltage are available.
http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept.
5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan,
Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: [email protected]
U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: [email protected]
Cat. No. LPRD1022E01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: [email protected]
JAN 2003 IP
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.
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