Hamamatsu G8373-01 Ingaas pin photodiode Datasheet

PHOTODIODE
InGaAs PIN photodiode
G8423/G8373/G5853 series
Long wavelength type (up to 2.6 µm)
Features
Applications
l Long cut-off wavelength: 2.6 µm
l Gas analysis
l 3-pin TO-18 package: low price
l Spectrophotometer
l Thermoelectrically cooled TO-8 package: low dark current l NIR (near infrared) photometry
l Active area: φ0.3 to φ3 mm
Accessories (Optional)
l Heatsink for one-stage TE-cooled type A3179
l Heatsink for two-stage TE-cooled type A3179-01
l Temperature controller for TE-cooled type C1103-04
■ Specifications / Absolute maximum ratings
Type No.
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
Di mensional
Package
outline
Cooling
➀
TO-18
➁
TO-5
➂
TO-8
One-stage
TE-cooled
TO-8
Two-stage
TE-cooled
➃
Non-cooled
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
Thermistor
power
dissipation
(mW)
-
Absolute maximum ratings
TE-cooler Reverse Operating
Storage
allowable voltage temperature temperature
current
VR
Topr
Tstg
(A)
(V)
(°C)
(°C)
-
-40 to +85
-55 to +125
-40 to +70
-55 to +85
2
1.5
0.2
1.0
■ Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
M easure ment
Spectral
Peak
Photo
condition
response sensitivity sensitivity
wavelength
S
range
Element
temperature
λp
λ=λp
λ
(°C)
(µm)
25
1.2 to 2.6
-10
1.2 to 2.57
-20
1.2 to 2.55
(µm)
2.3
Min. Typ.
(A/W) (A/W)
0.9
1.3
Dark current
ID
VR=1 V
Typ.
(µA)
2
5
15
150
0.2
1.5
15
0.1
0.8
7.5
Max.
(µA)
20
50
75
1500
2
7.5
150
1
4
75
Cut-off
frequency
fc
VR=1 V
RL=50 Ω
-3 dB
(MHz)
60
50
15
1.5
60
15
1.5
60
15
1.5
Terminal
capacitance Shunt
resistance
Ct
Rsh
VR=1 V V R = 10 m V
f=1 MHz
(pF)
40
60
200
1800
40
200
1800
40
200
1800
(kΩ)
30
15
3
0.3
300
30
3
600
60
6
D∗
λ=λp
NEP
λ=λp
(c m· Hz 1/2 / W) (W/Hz1/2)
7 × 10-13
1 × 10-12
5 × 1010
2 × 10-12
8 × 10-12
3 × 10-13
11
1 × 10
7 × 10-13
2 × 10-12
2 × 10-13
11
2 × 10
5 × 10-13
1.8 × 10-12
G8423/G8373/G5853 series may be damaged by Electro Static Discharge, etc. Be carefull when using
G8423/G8373/G5853 series.
1
InGaAs PIN photodiode
■ Spectral response
G8423/G8373/G5853 series
■ Photo sensitivity temperature characteristic
(Typ.)
(Typ.)
1.4
TEMPERATURE COEFFICIENT (%/˚C)
2
PHOTO SENSITIVITY (A/W)
1.2
1.0
0.8
T= -20 ˚C
0.6
T= -10 ˚C
0.4
0.2
T=25 ˚C
0
0.8 1.0
1.2 1.4 1.6
1
0
-1
0.8
1.8 2.0 2.2 2.4 2.6 2.8
1
1.2
WAVELENGTH (µm)
1.4
1.6
1.8
2
2.2 2.4
2.6
WAVELENGTH (µm)
KIRDB0216EB
KIRDB0206EA
■ Dark current vs. reverse voltage
Non-cooled type
TE-cooled type
(Typ. Ta=25 ˚C)
1 mA
(Typ.)
100 µA
G8373-03
G5853-13 (T= -10 ˚C)
10 µA
DARK CURRENT
DARK CURRENT
100 µA
G8373-01
G8423-05
10 µA
1 µA
G5853-23 (T= -20 ˚C)
1 µA
G5853-11 (T= -10 ˚C)
G5853-21 (T= -20 ˚C)
100 nA
G8423-03
G5853-103 (T= -10 ˚C)
G5853-203 (T= -20 ˚C)
100 nA
0.01
0.1
1
10 nA
0.01
10
0.1
REVERSE VOLTAGE (V)
1
10
REVERSE VOLTAGE (V)
KIRDB0238EA
■ Terminal capacitance vs. reverse voltage
KIRDB0218EA
■ Shunt resistance vs. element temperature
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
(Typ. VR=10 mV)
1 MΩ
G8423-03
G5853-103/-203
100 kΩ
1 nF
SHUNT RESISTANCE
TERMINAL CAPACITANCE
G8373-03
G5853-13/-23
G8373-01
G5853-11/-21
G8423-05
100 pF
G8423-05
G8373-01
G5853-11/-21
10 kΩ
1 kΩ
100 Ω
G8373-03
G5853-13/-23
G8423-03
G5853-103/-203
10 pF
0.1
1
10
REVERSE VOLTAGE (V)
-20
0
20
40
60
80
90
100
ELEMENT TEMPERATURE (˚C)
KIRDB0239EA
2
10 Ω
-40
KIRDB0240EA
InGaAs PIN photodiode
■ Thermistor temperature characteristic
40
ELEMENT TEMPERATURE (˚C)
RESISTANCE (Ω)
■ Cooling characteristics of TE-cooler
(Typ.)
106
105
4
10
3
10
G8423/G8373/G5853 series
20
ONE-STAGE
TE-COOLED TYPE
0
-20
TWO-STAGE
-40 TE-COOLED TYPE
-60
-40
-20
0
20
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
0
0.4
0.8
1.2
1.6
CURRENT (A)
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
KIRDB0231EA
■ Current vs. voltage characteristics of TE-cooler
1.6
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.4
ONE-STAGE
TE-COOLED TYPE
CURRENT (A)
1.2
1.0
0.8
0.6
TWO-STAGE
TE-COOLED TYPE
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VOLTAGE (V)
KIRDB0115EB
3
InGaAs PIN photodiode
G8423/G8373/G5853 series
■ Dimensional outlines (unit: mm)
2.7 ± 0.2
3.6 ± 0.2
PHOTOSENSITIVE
SURFACE
13 MIN.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
0.45
LEAD
4.2 ± 0.2
8.1 ± 0.1
WINDOW
5.9 ± 0.1
WINDOW
3.0 ± 0.1
2.5 ± 0.2
9.2 ± 0.2
4.7 ± 0.1
0.15 MAX.
5.4 ± 0.2
18 MIN.
➁ G8373-03
0.4 MAX.
➀ G8423-03/-05, G8373-01
5.1 ± 0.3
2.5 ± 0.2
1.5 MAX.
CASE
CASE
KIRDA0150EA
➂ G5853-103/-11/-13
KIRDA0151EA
➃ G5853-203
15.3 ± 0.2
15.3 ± 0.2
14 ± 0.2
PHOTOSENSITIVE
SURFACE
10 ± 0.2
12 MIN.
0.45
LEAD
6.7 ± 0.2
6.4 ± 0.2
WINDOW
10 ± 0.2
12 MIN.
PHOTOSENSITIVE
SURFACE
14 ± 0.2
4.4 ± 0.2
WINDOW
10 ± 0.2
0.45
LEAD
5.1 ± 0.2
10.2 ± 0.2
10.2 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
5.1 ± 0.2
KIRDA0029EB
KIRDA0031EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
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Cat. No. KIRD1048E04
May 2006 DN
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