Hamamatsu G8376-02 Ingaas pin photodiode Datasheet

PHOTODIODE
InGaAs PIN photodiode
G8376 series
Standard type
InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are
provided to meet wide applications.
Features
Applications
l Low noise, low dark current
l Low terminal capacitance
l 3-pin TO-18 package
l NIR (near infrared) photometry
l Optical communication
■ Specifications / Absolute maximum ratings
Type No.
G8376-01
G8376-02
G8376-03
G8376-05
Window material
Package
B orosilicate glass
with anti-reflective
coating (optimized
for 1.55 µ m peak)
TO-18
Active area
(mm)
φ0.04
φ0.08
φ0.3
φ0.5
Reverse
voltage
VR
(V)
Absolute maximum ratings
Operating
Storage
temperature
temperature
Topr
Tstg
(°C)
(°C)
20
-40 to +85
-55 to +125
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
G8376-01
G8376-02
G8376-03
G8376-05
* VR=5 V
Spectral
response
range
Peak
sensitivity
wavelength
λp
(µm)
(µm)
0.9 to 1.7
1.55
T er minal
Cut-off
Shunt
frequency capacitance
NEP
resistance
D∗
fc
Ct
Rsh
λ=λp
λ=λp
VR=2 V
VR=5 V
VR=10 mV
f=1 MHz
RL=50 Ω
-3 dB
1.3 µm λ=λp Typ. Max.
(c m· Hz 1/2 / W) (W/Hz1/2)
(MHz)
(pF)
(A/W) (A/W) (nA) (nA)
(MΩ)
0.06 0.3
3000
0.5
10000
2 × 10-15
0.08 0.4
2000
1
8000
2 × 10-15
0.9
0.95
5 × 1012
400 *
5
1000
0.3 1.5
4 × 10-15
200
*
12
300
0.5 2.5
8 × 10-15
Photo
sensitivity
S
Dark
current
ID
VR=5 V
1
InGaAs PIN photodiode
■ Spectral response
(Typ. Ta=25 ˚C)
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1 nA
1
0
-1
0.8
1.0
WAVELENGTH (µm)
1.2
1.4
1.6
1.8
WAVELENGTH (µm)
G8376-02
100 pA
G8376-01
1 pA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
KIRDB0002EB
KIRDB0042EA
KIRDB0249EA
■ Shunt resistance vs. ambient
temperature
(Typ. Ta=25 ˚C, f=1 MHz)
1 nF
G8376-05
G8376-03
10 pA
2.0
■ Terminal capacitance vs.
reverse voltage
(Typ. Ta=25 ˚C)
10 nA
DARK CURRENT
0.5
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
2
TEMPERATURE COEFFICIENT (%/˚C)
1
PHOTO SENSITIVITY (A/W)
■ Photo sensitivity temperature
characteristic
G8376 series
(Typ. VR=10 mV)
100 GΩ
G8376-01
SHUNT RESISTANCE
TERMINAL CAPACITANCE
G8376-02
10 GΩ
100 pF
G8376-05
G8376-03
10 pF
1 GΩ
G8376-03
100 MΩ
G8376-02
1 pF
G8376-05
10 MΩ
G8376-01
100 fF
0.01
0.1
1
10
1 MΩ
-40
100
-20
0
20
40
60
80
100
AMBIENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KIRDB0250EA
KIRDB0251EA
■ Dimensional outline (unit: mm)
5.4 ± 0.2
2.6 ± 0.2
13 MIN.
PHOTOSENSITIVE
SURFACE
3.7 ± 0.2
4.7 ± 0.1
WINDOW
3.0 ± 0.1
0.45
LEAD
2.5 ± 0.2
CASE
KIRDA0150EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KIRD1051E03
Feb. 2002 DN
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