PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG ■ General ratings Parameter Active area Pixel pitch Number of elements ■ Absolute maximum ratings Parameter Reverse voltage Allowable input power Operating temperature Storage temperature * In N environment or in vacuum Value f0.08 250 40 Symbol VR Max. Pin Max. Topr Tstg Remark Parameter Spectral response range Photo sensitivity Photo response non-uniformity Dark current Shunt resistance Terminal capacitance Cross-talk Symbol l S PRNU ID Rsh Ct - Value 6 10 -40 to +85 -40 to +85 * ■ Electrical and optical characteristics (Ta=25 °C, per 1 element) Condition l=1.31 µm l=1.55 µm VR=5 V VR=10 mV VR=5 V, f=1 MHz VR=0.1 V Unit mm µm ch Min. 0.8 0.85 - Typ. 0.9 to 1.7 0.9 0.95 0.02 8 1.4 -33 Unit V mV °C °C Max. ±5 0.2 - Unit µm A/W % nA GW pF dB PRELIMINARY DATA Apr. 2002 1 G8909-01 InGaAs PIN photodiode array ■ Spectral response ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 0.5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 (Typ. Ta=25 ˚C) 1 nA DARK CURRENT PHOTO SENSITIVITY (A/W) 1 100 pA 10 pA 1 pA 0.01 2.0 0.1 1 10 100 REVERSE VOLTAGE (V) WAVELENGTH (µm) KIRDB0002EB ■ Terminal capacitance vs. reverse voltage DARK CURRENT TERMINAL CAPACITANCE (Typ. VR=5 V) 100 nA 10 nA 1 pF 1 nA 100 pA 100 fF 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) ■ Cross-talk characteristic 100 (Typ. Ta=25 ˚C, λ=1.55 µm, SPOT= 20 µm, Pin=5 nW, VR=0.1 V) 250 µm 10 1 0.1 0.01 -250 -200 -150 -100 -50 10 pA 20 30 40 50 60 70 80 TEMPERATURE (˚C) KIRDB0267EA RELATIVE SENSITIVITY (%) ■ Dark current vs. temperature (Typ. Ta=25 ˚C, f=1 MHz) 10 pF 0 POSITION X (µm) KIRDB0269EA 2 KIRDB0266EA KIRDB0268EA InGaAs PIN photodiode array G8909-01 ■ Dimensional outline (unit: mm) ANODE PAD (PITCH: 400 µm, 40 ch, 150 × 150 µm BOND PADS) 22.0 0.4 (0.1) 0.5 CATHODE PAD 0.8 2.5 2.1 DETAIL a (0.15) 10.5 0.70 ± 0.05 * 2.0 0.80 a * The center of the active area to the bottom of the substrate KIRDA0158EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1053E02 Feb. 2003 DN 3