Hamamatsu G8921-01 Gaas pin photodiode array Datasheet

PHOTODIODE
GaAs PIN photodiode array
G8921-01
Photodiode array for data communication
Features
Applications
l Active area: φ0.06 mm
Element pitch: 250 µm
4-element array
l High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4]
at low bias voltage (VR=2 V)
l Low dark current, low capacitance
l Up to 16 elements available as option
■ General ratings
Parameter
Active area
Element pitch
Number of elements
■ Absolute maximum ratings
Parameter
Reverse voltage
Reverse current
Operating temperature
Storage temperature
* In N2 environment or in vacuum
l Optical fiber communications
l High-speed data link
Symbol
Symbol
VR Max.
IR Max.
Topr
Tstg
Value
f0.06
250
4
Remark
Unit
mm
µm
ch
Value
30
0.5
-40 to +85
-55 to +125
*
■ Electrical and optical characteristics (Unless other wise, Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Terminal capacitance
Cut-off frequency
Symbol
l
lp
S
ID
Ct
fc
Condition
l=850 nm
VR=5 V
VR=2 V, f=1 MHz
l=850 nm, VR=2 V,
RL=50 W, -3 dB
Unit
V
mA
°C
°C
Min.
0.45
-
Typ.
470 to 870
850
0.5
2
0.35
Max.
50
0.5
Unit
nm
nm
A/W
pA
pF
2
-
-
GHz
1
GaAs PIN photodiode array
■ Spectral response
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
0.6
(Typ. Ta=25 ˚C)
100 pA
0.5
10 pA
DARK CURRENT
PHOTO SENSITIVITY (A/W)
G8921-01
0.4
0.3
0.2
1 pA
100 fA
0.1
0
300
400
500
600
700
800
900
10 fA
0.01
1000
WAVELENGTH (nm)
0.1
1
10
100
REVERSE VOLTAGE (V)
KGPDB0048EA
KGPDB0049EA
■ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C)
1000
RELATIVE SENSITIVITY (%)
10 pF
TERMINAL CAPACITANCE
■ Cross-talk characteristic
1 pF
100 fF
0.01
0.1
1
10
(Typ. Ta=25 ˚C, λ=830 nm, step: 5 µm, Pin=20 nW, spot light size: 10 µm)
n ch
100
10
n+1 ch
1
0.1
0.01
0.001
100
0
REVERSE VOLTAGE (V)
100
200
300
400
500
POSITION (µm)
KGPDB0050EA
KGPDB0051EA
1.0
0.2 ± 0.05
■ Dimensional outline (unit: mm)
0.15
0.25
ANODE
CATHODE
2.30
6.4
ACTIVE AREA
0.06 × 4 ch
KGPDA0017EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KGPD1009E02
2
Jul. 2002 DN
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