Hamamatsu G9204-512S Ingaas linear image sensor Datasheet

IMAGE SENSOR
InGaAs linear image sensor
G9201 to G9204 series
Image sensor for DWDM wavelength monitor
G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These
linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,
a CDS circuit, an offset compensation circuit, a shift register and a timing generator. These sensors deliver high sensitivity and stable operation in
the near infrared spectral range. The package is hermetically sealed for high reliability and the window has an anti-reflective coating for efficient
light detection.
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by supplying an external voltage. The
image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.
Features
Applications
l DWDM wavelength monitor
l Optical spectrum analyzer
l Wide dynamic range
l Low noise and low dark current
l Selectable gain
l Anti-saturation circuit
l CDS circuit *1
l Offset compensation circuit
l Simple operation (by built-in timing generator) *2
l High resolution: 25 µm pitch (512 ch)
l Low cross-talk
l 256 ch: 1 video line
Accessories (Optional)
l InGaAs multichannel detector head C8061-01, C8062-01 *3
l Multichannel detector head controller C7557 *3
512 ch: 2 video lines
■ S e le c tio n g u id e
Ty p e N o .
C o o lin g
G 9 2 0 1 -2 5 6 R
G 9 2 0 1 -2 5 6 S
G 9 2 0 2 -5 1 2 R
G 9 2 0 2 -5 1 2 S
G 9 2 0 3 -2 5 6 D * 4
G 9 2 0 3 -2 5 6 R
G 9 2 0 3 -2 5 6 S
G 9 2 0 4 -5 1 2 D * 4
G 9 2 0 4 -5 1 2 R
G 9 2 0 4 -5 1 2 S
N o n -c o o le d
O n e -s ta g e T E -c o o le d
N o n -c o o le d
O n e -s ta g e T E -c o o le d
N o n -c o o le d
Num ber of
p ixe ls
P ix e l p itc h
(µ m )
P ix e l s iz e
[µ m (H ) × µ m (V )]
256
50
50 × 250
512
25
25 × 250
256
50
50 × 500
O n e -s ta g e T E -c o o le d
N o n -c o o le d
S p e c tra l re s p o n s e ra n g e
(µ m )
0 .9 to 1 .7 (2 5 °C )
0 .9 to 1 .6 7 (-1 0 ° C )
0 .9 to 1 .7 (2 5 °C )
0 .9 to 1 .6 7 (-1 0 ° C )
D e fe c tiv e
p ix e l
0 .9 to 1 .7 (2 5 °C )
0
0 .9 to 1 .6 7 (-1 0 ° C )
512
25
0 .9 to 1 .7 (2 5 °C )
25 × 500
O n e -s ta g e T E -c o o le d
■ Spectral response
(Typ.)
1.0
T=25 ˚C
T= -10 ˚C
PHOTO SENSITIVITY (A/W)
*1: CDS (Correlated Double Sampling) circuit
A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS circuit greatly
reduces this reset noise by holding the signal immediately after reset to find the noise differential.
*2: Timing generator
Different signal timings must be properly set in order to operate a
shift register. In conventional image sensor operation, external PLDs
(Programmable Logic Devices) are used to input the required timing
signals. However, G9201 to G9204 series image sensors internally
generate all timing signals on the CMOS chip just by supplying CLK
and RESET pulses. This makes it simple to set the timings.
*3: G9203-256D and G9204-512D are not available for C7557.
*4: For G9203-256D and G9204-512D specifications, see the separate
data sheets available from Hamamatsu.
0 .9 to 1 .6 7 (-1 0 ° C )
0.5
0
0.5
1.0
1.5
WAVELENGTH (µm)
2.0
KMIRB0011EA
1
InGaAs linear image sensor
G9201 to G9204 series
■ Absolute maximum ratings
Parameter
Clock pulse voltage
Operating temperature *1
Storage temperature *1
*1: Non condensation
Symbol
Vφ
Topr
Tstg
Value
5.5
-40 to +70
-40 to +85
Unit
V
°C
°C
■ Electrical characteristics (Ta=25 °C, Vφ=5 V )
Parameter
Symbol
Vdd
Vref
Vss
INP
f
Supply voltage
Ground
Element bias
Clock frequency
Clock pulse voltage
high
low
Vφ
tr φ
tf φ
tpw φ
Clock pulse rise/fall times
Clock pulse width
Reset pulse voltage
high
low
Reset pulse rise/fall times
Reset pulse width
Video output voltage
high
low
Data rate
V (RES)
tr (RES)
tf (RES)
tpw (RES)
VH
VL
fV
Min.
4.9
4.4
0.01
4.5
0
Typ.
5.0
1.26
0
4.5
Vφ
0
Max.
5.1
4.6
4
5.5
0.4
Unit
V
V
MHz
V
V
0
20
100
ns
200
4.5
0
Vφ
0
5.5
0.4
ns
V
V
0
20
100
ns
6000
-
4.4
1.26
f/8
INP
-
ns
V
V
Hz
■ Electrical and optical characteristics
General ratings (T=25 °C)
Parameter
Peak sensitivity wavelength
Saturation charge *2
RMS noise voltage (readout noise)
Photo response non-uniformity *3
Symbol
λp
Qsat
N
PRNU
Condition
Vp=5 V
Standard deviation
Number of
integration: 50
Integration time:
10 msec
Min.
-
Typ.
1.55
30
Max.
-
Unit
µm
pC
-
180
300
µVrms
-
-
±5
%
-
V
Saturation voltage
Vsat
3.0
3.2
*2: Vφ=5 V, Cf=10 pF
*3: 50 % of saturation, 10 ms integration time, after dark output subtraction, excluding first and last pixels.
Dark current characteristics (T=25 °C)
Parameter
G9201 series
G9202 series
G9203 series
G9204 series
2
Symbol
ID
Min.
-
Typ.
2
1
4
1
Max.
10
5
20
5
Unit
pA
InGaAs linear image sensor
G9201 to G9204 series
■ Equivalent circuit
q
(
)
1 PIXEL
Cf=10 pF
Cf=0.5 pF
SHIFT REGISTER
OFFSET
COMPENSATION
CDS
VIDEO
PHOTODIODE
AD-TRIG
TIMING GENERATOR
Vdd
INP Vss
CLK
RESET
Vref
EXTERNAL INPUT
KMIRC0010EB
■ Timing chart
CLK
(INPUT)
RESET
(INPUT)
INTEGRATION 2 CLOCKS
TIME
8 CLOCKS 8 CLOCKS
8 × N CLOCKS (READOUT TIME)
10 CLOCKS MIN.
TRIGGER
(OUTPUT)
VIDEO
(OUTPUT)
1 ch
(n-1) ch
2 ch
■ Basic circuit connection
n ch
KMIRC0016EB
CLK
RESET
BUFFER
Vref
VIDEO
Vdd
Cf SELECT
INP
AD-TRIG
Vss
BUFFER
KMIRC0012EA
3
InGaAs linear image sensor
G9201 to G9204 series
■ Dimensional outline (unit: mm)
63.5 ± 0.15
53.3 ± 0.15
38.1 ± 0.15
35.6 ± 0.15
15
3.0 ± 0.15
27.2 ± 0.15
20.3 ± 0.15
10.2 ± 0.15
22.9 ± 0.15
25.4 ± 0.15
28
1 2
14
A
NON-COOLED
6.4 ± 1
1.0 ± 0.2
B
A
INDEX MARK
B
4.35 1.8
ONE-STAGE TE-COOLED 6.15 3.6
(28 ×) 2.54
(28 ×)
0.46
KMIRA0010EA
■ Pin connection (top view)
256 PIXELS
TE +
THERM
THERM
CASE
512 PIXELS
Cf SELECT
RESET
TE AD-TRIG
Vdd
Vss
INP
CLK
RESET-EVEN
TE +
AD-TRIG-EVEN
THERM
THERM
CASE
CLK-EVEN
Vref
VIDEO
Cf SELECT
RESET-ODD
TE AD-TRIG-ODD
Vdd
Vss
INP
CLK-ODD
Vref
VIDEO-EVEN
VIDEO-ODD
KMIRC0013EA
Terminal name
CLK
RESET
Input/Output
Function and recommended connection
Input
Clock pulse for operating the CMOS shift register
(CMOS logic compatible)
Input
Reset pulse for initializing the feedback capacitance in the charge amplifier
(CMOS logic compatible) formed on the CMOS chip. The width of the reset pulse is integration time.
Vdd
Input
Vss
-
Supply voltage for operating the signal processing circuit on the CMOS chip.
INP
Input
Cf SELECT
Input
CASE
-
THERM
-
TE+, TE-
-
AD-TRIG
Output
Reset voltage for the charge amplifier array on the CMOS chip.
Voltage that determines the feedback capacitance (Cf) on the CMOS chip.
Cf=10 pF at 0 V, and Cf=0.5 pF at 5 V.
This terminal is electrically connected to the package.
Thermistor for monitoring temperature inside the package. No connection for
room temperature operation type.
Power supply terminal for the thermoelectric cooler that cools the photodiode array.
No connection for room temperature operation type.
Digital signal for AD conversion; positive polarity
VIDEO
Output
Analog video signal; positive polarity
Vref
Input
Ground for the signal processing circuit on the CMOS chip.
Reset voltage for the offset compensation circuit on the CMOS chip
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KMIR1012E02
May 2003 DN
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