Hamamatsu G9208 Near infrared image sensors (0.9 to 1.67 î¼m / 2.55 î¼m) Datasheet

InGaAs linear image sensors
G9211 to G9214 series
G9205 to G9208 series
Near infrared image sensors (0.9 to 1.67 μm /
2.55 μm)
The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel
spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS
transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration
mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for
high reliability.
Signal processing circuits on the CMOS chip can be selected from two conversion efficiencies (CE) by external voltage. The image
sensor operates over a wide dynamic range when CE=16 nV/e- and delivers high gain when CE=320 nV/e-.
Features
Applications
Wide dynamic range
Near infrared multichannel spectrophotometry
Low noise and low dark current
Radiation thermometry
Two selectable conversion efficiencies
Non-destructive inspection
Anti-saturation circuit
Related products
CDS circuit *1
InGaAs multichannel detector head C8061-01, C8062-01
Offset compensation circuit
Simple operation (by built-in timing generator)
*2
Multichannel detector head controller C7557
High resolution: 25 μm pitch (512 ch)
Low cross-talk
256 ch: 1 video line
512 ch: 2 video lines
*1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS (correlated
double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential.
*2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs
(programmable logic device) are used to input the required timing signals. However, the G9211 to G9214/G9205 to G9208 series image
sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the
timings.
www.hamamatsu.com
1
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Selection guide
Type No.
Cooling
Number of pixels
G9211-256S
G9212-512S
One-stage
TE-cooled
G9213-256S
G9214-512S
G9205-256W
G9206-256W
Two-stage
TE-cooled
G9207-256W
G9208-256W
*3: If your application requires sensors with no
Pixel pitch
(μm)
Pixel size
[μm (H) × μm (V)]
256
512
256
512
50
25
50
25
50
25
50
25
×
×
×
×
250
250
500
500
256
50
50 × 250
Spectral
response range
(μm)
Defective pixel
0.9 to 1.67 (-10 °C)
1 % Max. *3
0.9
0.9
0.9
0.9
to
to
to
to
1.85
2.05
2.25
2.55
(-20
(-20
(-20
(-20
°C)
°C)
°C)
°C)
5 % Max.
defective pixels, please select G9201 series.
Absolute maximum ratings
Parameter
Clock pulse voltage
Operating temperature *4
Storage temperature *4
*4: Non condensation
Symbol
Vφ
Topr
Tstg
Value
5.5
-40 to +70
-40 to +85
Unit
V
°C
°C
Electrical characteristics (Ta=25 °C, Vφ=5 V )
Parameter
Symbol
Vdd
Vref
256 ch
I(Vdd)
512 ch
I(Vref)
Vss
INP
I(INP)
f
Supply voltage
Supply current
Ground
Element bias
Element bias current
Clock frequency
High
Low
Clock pulse voltage
Vφ
Clock pulse rise time
Clock pulse fall time
Clock pulse width
trφ
tfφ
tpwφ
High
Low
Reset pulse voltage
V(RES)
Reset pulse rise time
Reset pulse fall time
Reset pulse width
tr(RES)
tf(RES)
tpw(RES)
VH
VL
fv
High
Low
Video output voltage
Video data rate
Min.
4.9
3.5
0.1
Vφ - 0.5
0
Typ.
5.0
1.26
45
90
0
4.5
Vφ
0
Max.
5.1
50
100
1
4.6
1
4
Vφ + 0.5
0.4
Unit
mA
V
V
mA
MHz
V
V
0
20
100
ns
100
Vφ - 0.5
0
Vφ
0
Vφ + 0.5
0.4
ns
V
V
0
20
100
ns
6000
0
-
4.5
1.26
f/8
-
ns
V
mA
V
Hz
Spectral response
(Typ.)
1.5
PHOTO SENSITIVITY (A/W)
T=25 °C
T= -10 °C
T= -20 °C
G9201 TO
G9204 SERIES
G9211 TO
1.0 G9214 SERIES
G9414 SERIES
G9207-256W
G9208-256W
G9206-256W
G9205-256W
0.5
0
0.5
1.0
1.5
2.0
WAVELENGTH (µm)
2.5
3.0
KMIRB0033EC
2
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Electrical and optical characteristics (G9211 to G9214 series: T=25 °C, G9205 to G9208 series: T=-20 °C)
Parameter
G9211 to G9214 series
Min.
Typ.
Max.
Symbol
Peak sensitivity wavelength
Saturation charge *5
RMS noise voltage
(Readout noise)
Photo response non-uniformity
*5: Vφ=5 V, CE=16 nV/e-
G9205
G9206
G9207
G9208
G9205 to G9208 series
Min.
Typ.
1.75
1.95
2.05
2.3
30
Max.
-
Unit
λp
-
1.55
-
μm
Qsat
-
30
-
N
-
180
300
-
180
300
μV rms
PRNU
-
-
±5 *6
-
-
±10 *7
%
pC
*6: 50 % of saturation, integration time: 10 ms, after dark output subtraction, excluding first and last pixels
*7: 50 % of saturation, integration time: 3 ms, after dark output subtraction, excluding first and last pixels
Dark current characteristics (T=25 °C)
Parameter
G9211-256S
G9212-512S
G9213-256S
G9214-512S
G9205-256W
G9206-256W
G9207-256W
G9208-256W
Symbol
Min.
-
ID
*5
*5
*5
*5
Typ.
2
1
4
1
15
30
200
500
Max.
10
5
20
5
60
120
800
2000
Unit
pA
*5: TD=-20 °C
Equivalent circuit
1 pixel
High gain
Low gain
Shift register
Offset
compensation
CDS
VIDEO
Photodiode
AD-TRIG
Timing generator
Vdd
INP Vss
CLK
RESET
Vref
External input
KMIRC0010EC
3
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Timing chart
CLK
(INPUT)
RESET
(INPUT)
Integration
time
8 × N clocks (Readout time)
2 clocks
8 clocks
8 clocks
10 clocks Min.
TRIGGER
(OUTPUT)
VIDEO
(OUTPUT)
1 ch
(n-1) ch
2 ch
n ch
KMIRC0016EA
Connection example
InGaAs linear image sensor
CLK
RESET
Buffer
Vref
VIDEO
Vdd
Cf SELECT
INP
AD-TRIG
Buffer
Vss
KMIRC0012EA
Dimensional outline (unit: mm)
63.5 ± 0.15
53.3 ± 0.15
38.1 ± 0.15
35.6 ± 0.15
15
3.0 ± 0.15
27.2 ± 0.15
20.3 ± 0.15
10.2 ± 0.15
22.9 ± 0.15
25.4 ± 0.15
28
1 2
14
A
6.4 ± 1
1.0 ± 0.2
B
A
Index mark
B
One-stage TE-cooled
6.15 3.6
Two-stage TE-cooled
7.25
4.5
(28 ×) 2.54
(28 ×)
0.46
KMIRA0011EA
4
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Pin connection (top view)
256 PIXELS
512 PIXELS
Cf SELECT
RESET
TE -
TE +
AD-TRIG-ODD
Vdd
Vss
INP
CLK-ODD
AD-TRIG-EVEN
THERM
THERM
CASE
CLK-EVEN
AD-TRIG
Vdd
Vss
INP
CLK
THERM
THERM
CASE
Cf SELECT
RESET-ODD
TE -
RESET-EVEN
TE +
Vref
Vref
VIDEO
VIDEO-ODD
VIDEO-EVEN
KMIRC0013EA
Terminal name
CLK
Input/Output
Input (CMOS logic compatible)
RESET
Input (CMOS logic compatible)
Vdd
Vss
INP
Input
Input
Input
Cf SELECT
Input
CASE
THERM
Output
TE+, TE-
Input
AD-TRIG
VIDEO
Vref
Output
Output
Input
Function and recommended connection
Clock pulse for operating the CMOS shift register
Reset pulse for initializing the feedback capacitance in the charge amplifier formed
in the CMOS chip. The width of the reset pulse is integration time.
Supply voltage for operating the signal processing circuit in the CMOS chip
Ground for the signal processing circuit in the CMOS chip
Reset voltage for the charge amplifier array in the CMOS chip
Voltage that determines the conversion efficiency in the CMOS chip. Low gain
(CE=16 nV/e-) at 0 V, and high gain (CE=320 nV/e-) at 5 V.
This terminal is electrically connected to the package.
Thermistor for monitoring temperature inside the package
Power supply terminal for the thermoelectric cooler that cools the photodiode
array. No connection for room temperature operation type.
Digital signal for AD conversion; positive polarity
Analog video signal; positive polarity
Reset voltage for the offset compensation circuit in the CMOS chip
Specifications of TE-cooler (Ta=25 °C, Vdd=5 V, INP=4.5 V)
Parameter
TE-cooler allowable current
TE-cooler allowable voltage
Temperature difference *6
Thermistor resistance
Thermistor power dissipation
Condition
*7
Symbol
Ic Max.
Vc Max.
Δt
Rth
Pth
One-stage TE-cooler
Min.
Typ.
Max.
1.8
5.0
40
4.85
5.00
5.15
0.2
Two-stage TE-cooler
Min.
Typ.
Max.
2.8
4.0
50
4.85
5.00
5.15
0.2
Unit
A
V
°C
kΩ
mW
*6: This is a temperature difference between the surface of active area and the heat radiating portion of package.
*7: One-stage thermoelectrically cooled type: Ic=1.4 A, two-stage thermoelectrically cooled type: Ic=2.6 A.
5
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
TE-cooler temperature characteristics
One-stgae TE-cooler
Two-stgae TE-cooler
(Typ. Ta=25 °C, Heatsink 0.5 °C/W)
(Typ. Ta=25 °C, Heatsink 0.4 °C/W)
6
60
50
4
40
3
30
2
20
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.8
1.6
Allowable voltage (V)
5
0
5
50
4
40
3
30
2
20
1
10
0
0
0
1
2
3
Allowable current (A)
Allowable current (A)
KMIRB0031EA
Thermistor temperature characteristic
KMIRB0032EA
Connection of related products
Shutter *1
timing pulse
105
THERMISTOR RESISTANCE (Ω)
60
Allowable voltage
Temperature difference
Temperature difference (°C)
Allowable voltage (V)
Allowable voltage
Temperature difference
Temperature difference (°C)
6
Trig.
POWER
Dedicated cable
(Included with the C7557)
SIGNAL I/O
SCSI *2
cable
TE CONTROL I/O
104
A relation between the thermistor
resistance and absolute temperature
is expressed by the following equation.
InGaAs linear
image sensor
+
Multichannel
detector head
C8061-01 (One-stage TE-cooled type)
C8062-01 (Two-stage TE-cooled type)
R1=R2 × exp B (1/T1-1/T2)
R1: Resistance at T1 (K)
R2: Resistance at T2 (K)
B : B constant (B=3200 K ± 2 %)
5 kΩ ± 3 % at 298 K
103
240
250
260
270
280
C7557
PC (Windows98/ME)
(Integrated SCSI board)
*1: Shutter, etc. are not available.
*2: SCSI cable and SCSI board (card) are not supplied with the C7557.
KACCC0401EA
290
300
TEMPERATURE (K)
KMIRB0041EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMIR1011E06 May 2008 DN
6
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