Hamamatsu G9230-01 Ingaas pin photodiode Datasheet

PHOTODIODE
InGaAs PIN photodiode
G9230-01
Back-illuminated type, uses package with no wire
Features
Applications
l Back-illuminated type
l Easy to handle since there are no wires on chip
(AnSn eutectic bonding)
Optical fibers can be brought closer to the chip
l Miniature package: 2 × 2 × 1 mm
l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)
l Precise chip position tolerance: ±0.075 mm
l LD monitor
l Optical fiber communication
■ General / Absolute maximum ratings
Parameter
Symbol
Active area
Reverse voltage
VR Max.
Operating temperature *
Topr.
Storage temperature *
Tstg.
* In N2 environment or in vacuum
value
φ0.3
10
-40 to +85
-40 to +85
Unit
mm
V
°C
°C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Photo sensitivity
Dark current
Shunt resistance
Terminal capacitance
Cut-off frequency
Noise equivalent power
Symbol
λ
S
ID
Rsh
Ct
fc
NEP
Condition
λ=1.3 µm
λ=1.55 µm
VR=5 V
VR=10 mV
VR=5 V, f=1 MHz
VR=5 V, RL=50 Ω
λ=λp
Min.
0.85
-
Typ.
0.95 to 1.7
0.85
0.95
0.3
1000
5
400
4 × 10-15
Max.
1.5
-
Unit
µm
A/W
A/W
nA
MΩ
pF
MHz
W/Hz1/2
1
InGaAs PIN photodiode
■ Spectral response
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
1.2
(Typ. Ta=25 ˚C)
10 nA
1.0
1 nA
DARK CURRENT
PHOTO SENSITIVITY (A/W)
G9230-01
0.8
0.6
0.4
100 pA
10 pA
0.2
0
0.8
1
1.4
1.2
1.6
1 pA
0.01
1.8
WAVELENGTH (µm)
0.1
1
10
100
REVERSE VOLTAGE (V)
KIRDB0287EA
KIRDB0288EA
■ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
TERMINAL CAPACITANCE (pF)
100
10
1
0.1
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0289EA
■ Dimensional outline (unit: mm)
ANODE
0.2
(0.5)
(0.6)
(0.5)
(0.2)
1.0
0.2
0.6
2.0
ACTIVE AREA
0.3
2.0
1.0
CATHODE
Tolerance unless otherwise noted: ±0.075
Values in parentheses indicate reference value.
KIRDA0168EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KIRD1055E02
Dec. 2004 DN
Similar pages