GTM GBC557 Pnp silicon transistor Datasheet

ISSUED DATE :2005/10/21
REVISED DATE :
GBC557
PNP SILICON TRANSISTOR
Description
The GBC557 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA
Complementary to GBC547
Package Dimensions
D
TO-92
E
A
S1
b1
REF.
L
S E A T IN G
PLANE
e1
e
b
A
S1
b
b1
C
C
Millimeter
Min.
Max.
4.45
4.7
1.02
0.36
0.51
0.36
0.76
0.36
0.51
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
1.150
1.390
2.42
2.66
REF.
D
E
L
e1
e
Absolute Maximum Ratings (TA=25 )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (continuous)
Total Device Dissipation @ TA =25
Derate above 25
Total Device Dissipation @ TC =25
Derate above 25
Symbol
VCBO
VCEO
VEBO
IC
Operating and Storage Junction Temperature
TJ, Tstg
R JA
R JC
PD
PD
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Electrical Characteristics (TA = 25
Symbol
BVCBO
BVCEO
BVEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*VBE(on)1
*VBE(on)2
*hFE
fT
Cob
Min.
-50
-45
-5
-0.55
120
-
Classification Of hFE
Rank
Range
GBC557
A
120 ~ 220
Ratings
-50
-45
-5
-100
625
5.0
1.5
12
-55 ~ +150
200
83.3
Typ.
-0.075
-0.25
-0.7
-1.0
-0.62
-0.7
320
3.0
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
unless otherwise noted)
Max.
-100
-0.3
-0.65
-0.7
-0.82
800
6.0
Unit
V
V
V
nA
V
V
V
V
V
V
MHz
pF
Test Conditions
IC=-100uA, IE=0
IC=-2mA, IB=0
IE=-100uA, IC=0
VCE=-20V, VBE=0
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IC=0, f=1MHz
*Pulse Test: Pulse Width
B
180 ~ 460
380 s, Duty Cycle 2%
C
420 ~ 800
Page: 1/2
ISSUED DATE :2005/10/21
REVISED DATE :
Characteristics Curve
Fig 1. DC Current Gain
Fig 2. Collector Saturation Region
Fig 3. “Saturation” & “On” Voltages
Fig 4. Temperature Coefficients
Fig 5. Capacitances
Fig 6. Bandwidth Product
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBC557
Page: 2/2
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