1/2 GBC847 NP N E PITAX I AL P L ANAR T RANS ISTO R Description The GBC847 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 6 V Collector Current IC 100 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 50 - - V IC=100uA BVCEO 45 - - V IC=1mA BVEBO 6 - - V IE=10uA ICBO - - 15 nA VCB=30V VCE(sat)1 - 90 250 mV IC=10mA, IB=0.5mA VCE(sat)2 - 200 600 mV IC=100mA, IB=5mA VBE(sat)1 - 700 - mV IC=10mA, IB=0.5mA VBE(sat)2 - 900 - mV IC=100mA, IB=5mA VBE(on)1 580 - 700 mV VCE=5V, IC=2mA VBE(on)2 - - 770 mV VCE=5V, IC=10mA hFE 110 - 800 fT - 300 - MHz Cob - 3.5 6 pF Test Conditions VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, f=1MHz, IE=0A 2/2 Classification Of hFE Rank A B C hFE 110-220 200-450 450-800 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165