Z ibo Seno Electronic Engineering Co., Ltd. GBJ6A - GBJ6M 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 170A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 GBJ4 P N A Lead Free Finish/RoHS Complian B _ Mechanical Data · · · · · · · K Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Weight: 6.6 grams (approx) Marking: Type Number L M J E R D Min Max A 24.80 25.20 B 14.70 15.30 C H C Dim G 4.00 Nominal D 17.20 17.80 E 0.90 1.10 G 7.30 7.70 H 3.10 Æ 3.40 Æ J 3.30 3.70 K 1.50 1.90 L L 9.30 9.70 M 2.50 2.90 N 3.40 3.80 P 4.40 4.80 R 0.60 0.80 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC = 110°C Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element @ IF = 3.0A Peak Reverse Current at Rated DC Blocking Voltage @ TC = 25°C @ TC= 125°C I2t Rating for Fusing (t < 8.3ms) (Note 1) Typical Junction Capacitance per Element (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range Notes: Symbol GBJ 6A GBJ 6B GBJ 6D GBJ 6G GBJ 6J GBJ 6K GBJ 6M Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 6.0 A IFSM 170 A VFM 1.0 V IR 5.0 500 µA I2t 120 A2s Cj 55 pF RqJC 1.8 °C/W Tj, TSTG -65 to +150 °C 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink. GBJ6A - GBJ6M 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. GBJ6A - GBJ6M With heatsink 5 4 3 Without heatsink 2 1 Resistive or Inductive load 0 25 50 75 100 125 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 6 150 1.0 0.1 Tj = 25°C Pulse width = 300µs 0.01 0 180 160 Tj = 150°C 120 80 40 1.6 1.8 Tj = 25°C f = 1MHz 1 100 1 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 1.2 10 0 10 0.8 100 Single half-sine-wave (JEDEC method) Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 1 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 1000 100 Tj = 125°C Tj = 100°C 10 1.0 Tj = 50°C Tj = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics GBJ6A - GBJ6M 2 of 2 www.senocn.com Alldatasheet