NIEC GCH10A10 Schottky barrier diode Datasheet

SBD
T y p e : GCH10
CH10A
10A10
OUTLINE DRAWING
FEATURES
*Similar to TO-220AB Case
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
Maximum Ratings
Rating
Approx Net Weight: 1.9g
Symbol
Repetitive Peak Reverse Voltage
GCH10A10
VRRM
Average Rectified Output Current
IO
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Tjw
Tstg
Ftor
10
120
Unit
100
50 Hz Full Sine Wave
Tc=121°C
Resistive Load
11.1
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
V
A
A
A
°C
°C
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
Tj= 25°C, VRM= VRRM
per arm
Tj= 25°C, IFM= 5 A
VFM
per arm
Rth(j-c) Junction to Case
IRM
Min.
Typ. Max.
Unit
-
-
1
mA
-
-
0.85
V
-
-
3
°C /W
GCH_A_ OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
GCH10A10 (per Arm)
INSTANTANEOUS FORWARD CURRENT (A)
20
10
5
2
Tj=25°C
Tj=150°C
1
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
θ
180°
AVERAGE FORWARD POWER DISSIPATION
CONDUCTION ANGLE
AVERAGE FORWARD POWER DISSIPATION (W)
GCH10A10 (Total)
RECT 180°
SINE WAVE
8
6
4
2
0
0
2
4
6
8
AVERAGE FORWARD CURRENT (A)
10
12
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C
GCH10A10 (per Arm)
PEAK REVERSE CURRENT (mA)
20
10
5
2
0
20
40
60
80
100
120
PEAK REVERSE VOLTAGE (V)
AVERAGE REVERSE POWER DISSIPATION
GCH10A10 (Total)
AVERAGE REVERSE POWER DISSIPATION (W)
2.0
RECT 180°
1.6
1.2
SINE WAVE
0.8
0.4
0
0
20
40
60
REVERSE VOLTAGE (V)
80
100
120
0°
θ
180°
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
CONDUCTION ANGLE
V R M= 100V
GCH10A10 (Total)
12
AVERAGE FORWARD CURRENT (A)
RECT 180°
SINE WAVE
10
8
6
4
2
0
0
25
50
75
100
125
150
CASE TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load
GCH10A10
140
SURGE FORWARD CURRENT (A)
120
100
80
60
40
I FSM
20
0.02s
0
0.02
0.05
0.1
0.2
TIME (s)
0.5
1
2
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue
GCH10A10 (per Arm)
JUNCTION CAPACITANCE (pF)
500
200
100
50
20
0.5
1
2
5
10
20
REVERSE VOLTAGE (V)
50
100
200
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