GTM GD411SD Surface mount schottky barrier diode Datasheet

CORPORATION
G D 4 11 S D
Description
ISSUED DATE :2005/12/20
REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 5 A
The GD411SD is designed for low power rectification.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Absolute Maximum Ratings at TA = 25
Parameter
Symbol
Ratings
Tj
+125
Storage Temperature
Tstg
-40 ~ +125
Maximum Recurrent Peak Reverse Voltage
VRRM
40
V
Maximum RMS Voltage
VRMS
28
V
Maximum DC Blocking Voltage
VDC
20
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
3.0
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
20
pF
Junction Temperature
Unit
Maximum Average Forward Rectified Current
Io
0.5
A
Total Power Dissipation
PD
225
mW
Electrical Characteristics (at TA = 25
Parameter
Reverse Breakdown Voltage
unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
V(BR)R
40
-
-
V
Maximum Instantaneous Forward Voltage
VF
Maximum Average Reverse Current
IR
-
-
300
-
-
500
-
-
30
mV
uA
Test Conditions
IR=100 A
IF1=10mA
IF2=500mA
VR=10V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
GD411SD
Page: 1/2
CORPORATION
ISSUED DATE :2005/12/20
REVISED DATE :
Characteristics Curve
Important Notice:
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GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
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GD411SD
Page: 2/2
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