ETL GE60L02 N-channel enhancement mode power mosfet Datasheet

Pb Free Plating Product
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/12B
GE60L02
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
25V
13m
50A
Description
The GE60L02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
25
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25
50
A
Continuous Drain Current, VGS@10V
ID @TC=100
32
A
180
A
62.5
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
0.5
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
W/
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-case
2.0
/W
Thermal Resistance Junction-ambient
Max.
Rthj-amb
62
/W
GE60L02
Page: 1/5
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/12B
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
25
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.037
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
30
-
S
VDS=10V, ID=25A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
1
uA
VDS=25V, VGS=0
-
-
25
uA
VDS=20V, VGS=0
-
-
13
-
-
26
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=10V, ID=25A
VGS=4.5V, ID=20A
Total Gate Charge2
Qg
-
21
-
Gate-Source Charge
Qgs
-
2.8
-
Gate-Drain (“Miller”) Change
Qgd
-
16
-
Td(on)
-
8
-
Tr
-
75
-
Td(off)
-
22
-
Tf
-
20
-
Input Capacitance
Ciss
-
605
-
Output Capacitance
Coss
-
415
-
Reverse Transfer Capacitance
Crss
-
195
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.26
V
IS=50A, VGS=0V, Tj=25
IS
-
-
50
A
VD=VG=0V, VS=1.26V
ISM
-
-
180
A
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Single Pulse Avalanche Energy2
EAS
-
-
61
mJ
Avalanche Current
IAR
-
-
35
A
VDD=25V, ID=35A, L=100uH
VGS=10V,
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=25A
VDS=20V
VGS=5V
ns
VDS=15V
ID=20A
VGS=10V
RG=3.3
RD=0.75
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
1
Test Conditions
Drain-Source Avalanche Ratings
Parameter
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE60L02
Page: 2/5
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/12B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
GE60L02
Page: 3/5
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/12B
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GE60L02
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page: 4/5
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/12B
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE60L02
Page: 5/5
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