ETL GE60N03 N-channel enhancement mode power mosfet Datasheet

Pb Free Plating Product
ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
GE60N03
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
30V
16.5m
55A
Description
The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low
voltage application such as DC/DC converters and high efficiency switching circuit.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25
55
A
Continuous Drain Current, VGS@10V
ID @TC=100
35
A
215
A
62.5
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
0.5
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
W/
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
2.0
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
GE60N03
Page: 1/5
ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.037
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
30
-
S
VDS=10V, ID=28A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
25
uA
VDS=30V, VGS=0
-
-
250
uA
VDS=24V, VGS=0
-
14.5
16.5
-
21.5
25
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=10V, ID=28A
VGS=4.5V, ID=22A
Total Gate Charge2
Qg
-
22.4
-
Gate-Source Charge
Qgs
-
2.7
-
Gate-Drain (“Miller”) Change
Qgd
-
14
-
Td(on)
-
7.4
-
Tr
-
81
-
Td(off)
-
24
-
Tf
-
18
-
Input Capacitance
Ciss
-
950
-
Output Capacitance
Coss
-
440
-
Reverse Transfer Capacitance
Crss
-
145
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.3
V
IS=55A, VGS=0V, Tj=25
IS
-
-
55
A
VD=VG=0V, VS=1.3V
ISM
-
-
215
A
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=28A
VDS=24V
VGS=5V
ns
VDS=15V
ID=28A
VGS=10V
RG=3.3
RD=0.53
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
1
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE60N03
Page: 2/5
ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
GE60N03
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ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GE60N03
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE60N03
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