ETL GE60T03 N-channel enhancement mode power mosfet Datasheet

Pb Free Plating Product
ISSUED DATE :2005/11/22
REVISED DATE :
GE60T03
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
30V
12m
45A
Description
The GE60T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25
45
A
Continuous Drain Current, VGS@10V
ID @TC=100
32
A
120
A
44
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
0.352
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +175
Symbol
Value
W/
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
3.4
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
GE60T03
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ISSUED DATE :2005/11/22
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.03
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
25
-
S
VDS=10V, ID=10A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
1
uA
VDS=30V, VGS=0
-
-
250
uA
VDS=24V, VGS=0
-
-
12
-
-
25
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=175 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=10V, ID=20A
VGS=4.5V, ID=15A
Total Gate Charge2
Qg
-
11.6
19
Gate-Source Charge
Qgs
-
3.9
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
Td(on)
-
8.8
-
Tr
-
57.5
-
Td(off)
-
18.5
-
Tf
-
6.4
-
Input Capacitance
Ciss
-
1135
1816
Output Capacitance
Coss
-
200
-
Reverse Transfer Capacitance
Crss
-
135
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.3
V
IS=45A, VGS=0V
Reverse Recovery Time
Trr
-
23.3
-
ns
Reverse Recovery Charge
Qrr
-
16
-
nC
IS=20A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=20A
VDS=24V
VGS=4.5V
ns
VDS=15V
ID=20A
VGS=10V
RG=3.3
RD=0.75
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE60T03
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ISSUED DATE :2005/11/22
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GE60T03
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ISSUED DATE :2005/11/22
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE60T03
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