Pb Free Plating Product ISSUED DATE :2006/06/06 REVISED DATE : GE75N07 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 75V 11m 80A Description The GE75N07 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *Low Gate Charge *Simple Drive Requirement *Fast Switching Characteristics *RoHS Compliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25 80 A Continuous Drain Current, VGS@10V ID @TC=100 56 A 300 A 156 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor Single Pulse Avalanche Energy 0.125 3 Operating Junction and Storage Temperature Range EAS 450 Tj, Tstg -55 ~ +150 Symbol Value W/ mJ Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-case 0.8 /W Thermal Resistance Junction-ambient Max. Rthj-amb 62 /W GE75N07 Page: 1/4 ISSUED DATE :2006/06/06 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 75 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.08 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 40 - S VDS=10V, ID=40A IGSS - - ±100 nA VGS= ±20V - - 10 uA VDS=60, VGS=0 - - 100 uA VDS=75V, VGS=0 RDS(ON) - - 11 m VGS=10V, ID=40A Total Gate Charge Qg - 83 130 Gate-Source Charge Qgs - 10 - nC Gate-Drain (“Miller”) Change Qgd - 51 - ID=40A VDS=60V VGS=4.5V Td(on) - 15 - Tr - 73 - Td(off) - 340 - ns Tf - 200 - VDS=40V ID=30A VGS=10V RG=10 RD=1.33 Ciss - 4270 6830 Output Capacitance Coss - 690 - pF Reverse Transfer Capacitance Crss - 320 - VGS=0V VDS=25V f=1.0MHz Rg - 1.8 2.7 Symbol Min. Typ. Max. Unit VSD - - 1.5 V IS=40A, VGS=0V, Tj=25 Reverse Recovery Time Trr - 90 - ns Reverse Recovery Charge Qrr - 235 - nC IS=40A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance 2 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Gate Resistance IDSS V/ Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. 3. Starting Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=30A. GE75N07 Page: 2/4 ISSUED DATE :2006/06/06 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GE75N07 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. On-Resistance v.s. Drain Current Page: 3/4 ISSUED DATE :2006/06/06 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GE75N07 Page: 4/4