Pb Free Plating Product ISSUED DATE :2006/09/05 REVISED DATE : GE75NF75 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 75V 11m 80A Description The GE75NF75 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *High Density Cell Design for Ultra Low On-Resistance *High power and Current handing capability Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±25 V Continuous Drain Current ID @TC=25 80 A Continuous Drain Current ID @TC=100 56 A 200 A 268 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor Single Pulse Avalanche Energy 1.78 2 Single Pulse Avalanche Current Operating Junction and Storage Temperature Range W/ EAS 350 mJ IAS 38 A Tj, Tstg -55 ~ +175 Symbol Value Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-case 0.56 /W Thermal Resistance Junction-ambient Max. Rthj-amb 60 /W GE75NF75 Page: 1/4 ISSUED DATE :2006/09/05 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 75 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA gfs - 34 - S VDS=15V, ID=40A IGSS - - ±100 nA VGS= ±25V - - 1 uA VDS=75, VGS=0 - - 5 uA VDS=60V, VGS=0 RDS(ON) - - 11 m VGS=10V, ID=37.5A Total Gate Charge3 Qg - 114 - Gate-Source Charge Qgs - 33 - nC Gate-Drain (“Miller”) Change Qgd - 18 - ID=30A VDS=30V VGS=10V Td(on) - 21 - Tr - 39 - Td(off) - 70 - ns Tf - 24 - VDS=30V VGS=10V RG=3 RL=1 Ciss - 7000 - Output Capacitance Coss - 400 - pF Reverse Transfer Capacitance Crss - 87 - VGS=0V VDS=30V f=1.0MHz Symbol Min. Typ. Max. Unit VSD - - 1.5 V IS=75A, VGS=0V, Tj=25 Reverse Recovery Time Trr - 53 - ns Reverse Recovery Charge Qrr - 143 - nC IS=30A, VGS=0V dI/dt=100A/ s Continuous Source Current (Body Diode) IS - - 80 A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) 3 Static Drain-Source On-Resistance 3 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance IDSS Test Conditions Source-Drain Diode Parameter 3 Forward On Voltage 3 Test Conditions VD= VG=0V, VS=1.5V Notes: 1. Pulse width limited by safe operating area. 2. Starting Tj=25 , VDD=20V, L=0.1mH, RG=25 , IAS=20A. 3. Pulse width 300us, duty cycle 2%. GE75NF75 Page: 2/4 ISSUED DATE :2006/09/05 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature 100 10 1 0.1 0.01 0.001 0.0001 Fig 5. On-Resistance v.s. Gate-Source Voltage GE75NF75 Fig 6. Body Diode Characteristics Page: 3/4 ISSUED DATE :2006/09/05 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics 0.56 Fig 8. Single Pulse Avalanche Capability Fig 10. Typical Capacitance Characteristics /W Fig 11. Normalized Maximum Transient Thermal Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GE75NF75 Page: 4/4