GTM GE85T08

Pb Free Plating Product
ISSUED DATE :2005/03/08
REVISED DATE :
GE85T08
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
80V
13m
75A
Description
The GE85T08 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
80
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current, VGS@10V
ID @TC=25
75
A
Continuous Drain Current, VGS@10V
ID @TC=100
48
A
260
A
138
W
Pulsed Drain Current
1
IDM
PD @TC=25
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
1.11
3
Avalanche Current
Operating Junction and Storage Temperature Range
W/
EAS
450
mJ
IAR
30
A
Tj, Tstg
-55 ~ +150
Symbol
Value
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
0.9
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
GE85T08
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ISSUED DATE :2005/03/08
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
80
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.09
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
70
-
S
VDS=10V, ID=45A
IGSS
-
-
100
nA
VGS=
-
-
10
uA
VDS=80V, VGS=0
-
-
100
uA
VDS=64V, VGS=0
-
-
13
-
-
18
Qg
-
63
100
Gate-Source Charge
Qgs
-
23
-
Gate-Drain (“Miller”) Change
Qgd
-
38
-
Td(on)
-
30
-
Tr
-
100
-
Td(off)
-
144
-
Tf
-
173
-
Input Capacitance
Ciss
-
6300
10080
Output Capacitance
Coss
-
670
-
Reverse Transfer Capacitance
Crss
-
350
-
Rg
-
1.1
1.7
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.3
V
IS=45A, VGS=0V
Reverse Recovery Time
Trr
-
47
-
ns
Reverse Recovery Charge
Qrr
-
86
-
nC
IS=20A, VGS=0V
dI/dt=100A/ s
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
2
Static Drain-Source On-Resistance
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=1mA
Reference to 25 , ID=1mA
20V
VGS=10V, ID=45A
VGS=4.5V, ID=25A
nC
ID=45A
VDS=64V
VGS=4.5V
ns
VDS=40V
ID=45A
VGS=10V
RG=10
RD=0.89
pF
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
2
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
3. Staring Tj=25 , VDD=30V, L=1mH, RG=25 , IAS=30A.
GE85T08
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ISSUED DATE :2005/03/08
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GE85T08
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/03/08
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE85T08
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