STMicroelectronics GF20NB60S N-channel 13a - 600v to-220fp powermesh tm igbt Datasheet

STGF20NB60S
N-CHANNEL 13A - 600V TO-220FP
PowerMESH™ IGBT
Figure 1: Package
Table 1: General Features
TYPE
STGF20NB60S
VCES
VCE(sat) (Max)
@25°C
IC
@100°C
600 V
< 1.7 V
13 A
LOW ON-VOLTAGE DROP (Vcesat)
HIGHT CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
HIGH INPUT IMPEDANCE (VOLTAGE
DRIVEN)
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized to
achieve minimum on-voltage drop for low frequency to applications (<1kHz).
3
1
2
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL
Table 2: Order Code
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGF20NB60S
GF20NB60S
TO-220FP
TUBE
Rev. 3
August 2005
1/11
STGF20NB60S
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC = 25°C (#)
24
A
IC
Collector Current (continuous) at TC = 100°C (#)
13
A
Collector Current (pulsed)
70
A
ICM ()
PTOT
Total Dissipation at TC = 25°C
40
W
Derating Factor
0.32
W/°C
VISO
Insulation withstand voltage AC (t=1sec, Tc=25°C)
2500
V
Tstg
Storage Temperature
–55 to 150
°C
Tj
Operating Junction Temperature range
() Pulse width limited by safe operating area
Table 4: Thermal Data
Min.
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
TL
Maximum Lead Temperature for Soldering Purpose (1.6 mm
from case, for 10 sec.)
Typ.
Max.
3.15
°C/W
62.5
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
ICES
Collector cut-off Current
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
nA
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250 µA
5
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 20 A, Tj= 25°C
VGE = 15V, IC = 20A, Tj=150°C
1.7
V
V
(#) Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = -------------------------------------------------------------------------------------------------C C
R
×V
(T , I )
THJ – C
C ESAT ( MAX ) C C
2/11
Min.
Typ.
Max.
600
Unit
V
2.5
1.25
1.2
STGF20NB60S
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Forward Transconductance
VCE = 10 V , IC = 8 A
Cies
Input Capacitance
VCE = 25 V, f= 1 MHz, VGE = 0
Coes
Min.
Typ.
Max.
Unit
20
S
1820
pF
Output Capacitance
167
pF
Cres
Reverse Transfer
Capacitance
27
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 480 V, IC = 20 A,
VGE = 15 V
(see Figure 19)
ICL
Turn-off SOA minimum
current
Vclamp = 480 V , Tj = 125°C
RG = 100 Ω
83
10
27
115
80
nC
nC
nC
A
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 480 V, IC = 20 A
RG= 100 Ω, VGE= 15V
(see Figure 17)
92
70
340
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Delay Time
VCC = 480 V, IC = 20 A
RG= 100 Ω, VGE= 15V,
Tj= 125°C (see Figure 17)
80
73
320
ns
ns
A/µs
Table 8: Switching Off
Symbol
tc
Parameter
Cross-over Time
tr(Voff)
Off Voltage Rise Time
td(off)
Turn-off Delay Time
tf
Current Fall Time
tc
Cross-over Time
tr(Voff)
Off Voltage Rise Time
td(off)
Turn-off Delay Time
tf
Test Conditions
Min.
Vcc = 480 V, IC = 20 A,
RG = 100 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 17)
Vcc = 480 V, IC = 20 A,
RG = 100 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 17)
Current Fall Time
Typ.
Max.
Unit
1.6
µs
0.78
µs
1.1
µs
0.79
µs
2.4
µs
1.1
µs
2.4
µs
1.2
µs
Table 9: Switching Energy
Symbol
Parameterr
Test Conditions
Min.
Typ.
Max
Unit
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V, IC = 20 A
RG= 100 Ω, VGE= 15V,
(see Figure 18)
0.84
7.4
8.24
mJ
mJ
mJ
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V, IC = 20 A
RG= 100 Ω, VGE=15V,Tj=125°C
(see Figure 18)
0.86
11.5
12.4
mJ
mJ
mJ
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode.
(3) Turn-off losses include also the tail of the collector current.
3/11
STGF20NB60S
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Normalized Collector-Emitter On
Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Gate Threshold vs Temperature
4/11
STGF20NB60S
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Switching Losses vs Gate Charge
Figure 11: Switching Losses vs Temperature
Figure 14: Switching Losses vs Collector Current
5/11
STGF20NB60S
Figure 15: Thermal Impedance
6/11
Figure 16: Collector-Emitter Diode Characteristics
STGF20NB60S
Figure 17: Test Circuit for Inductive Load
Switching
Figure 19: Gate Charge Test Circuit
Figure 18: Switching Waveforms
7/11
STGF20NB60S
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
8/11
STGF20NB60S
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
inch
MAX.
MIN.
A
4.4
TYP
4.6
0.173
TYP.
0.181
MAX.
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
1.126
1.204
L2
16
0.630
L3
28.6
30.6
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
9/11
STGF20NB60S
Table 10: Revision History
Date
Revision
17-Dec-2004
05-Aug-2005
2
3
10/11
Description of Changes
New template, no content change
Some values changed in table 6
STGF20NB60S
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11/11
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