Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : GI405 BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 32m -18A Description The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The through-hole version (TO-251) is available for low-profile applications and suited for high current load applications. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25 -18 A Continuous Drain Current, VGS@10V ID @TC=100 -14 A -40 A 60 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor Single Pulse Avalanche Energy 0.4 2 Single Pulse Avalanche Current Operating Junction and Storage Temperature Range W/ EAS 61 mJ IAS -35 A Tj, Tstg -55 ~ +175 Symbol Value Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 2.5 /W Thermal Resistance Junction-ambient Max. Rthj-a 50 /W GI405 Page: 1/4 ISSUED DATE :2006/12/06 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -1.2 - -2.4 V VDS=VGS, ID=-250uA gfs - 17 - S VDS=-5V, ID=-18A IGSS - - ±100 nA VGS= ±20V - - -1 uA VDS=-30V, VGS=0 - - -5 uA VDS=-24V, VGS=0 - - 32 - - 60 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance3 IDSS RDS(ON) m Test Conditions VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A Total Gate Charge3 Qg - 18.7 23 Gate-Source Charge Qgs - 2.54 - Gate-Drain (“Miller”) Change Qgd - 5.4 - Td(on) - 9 13 Tr - 25 - Td(off) - 20 - Tf - 12 - Input Capacitance Ciss - 920 1100 Output Capacitance Coss - 190 - Reverse Transfer Capacitance Crss - 122 - Symbol Min. Typ. Max. Unit VSD - - -1.0 V IS=-1A, VGS=0V IS - - -18 A VD= VG=0V, VS=-1.0V Reverse Recovery Time Trr - 21.4 - ns Reverse Recovery Charge Qrr - 13 - nC IS=-18A, VGS=0V dI/dt=100A/ s Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time nC ID=-18A VDS=-15V VGS=-10V ns VDS=-15V VGS=-10V RG=3 RL=0.82 pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage3 Continuous Source Current (Body Diode) 3 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=25V, L=0.1mH, RG=25 . 3. Pulse width 300us, duty cycle 2%. GI405 Page: 2/4 ISSUED DATE :2006/12/06 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 5. On-Resistance v.s. Gate-Source Voltage GI405 Fig 6. Body Diode Characteristics Page: 3/4 ISSUED DATE :2006/12/06 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient Fig 9. Gate Charge Characteristics 0.00001 0.0001 0.001 0.01 Fig 10. Typical Capacitance Characteristics 0.1 1 10 100 1000 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI405 Page: 4/4