DSK GI508 Plastic silicon rectifier Datasheet

Diode Semiconductor Korea
GI500---GI510
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
PLASTIC SILICON RECTIFIERS
FEATURES
DO--27
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
GI
500
GI
501
GI
502
GI
504
GI
506
GI
508
GI
510
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
V DC
50
100
200
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
3.0
A
IFSM
100.0
A
VF
1.1
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 9.4 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA =100
IR
5.0
Typical junction capacitance
(Note1)
CJ
35
Typical thermal resistance
(Note2)
RθJA
20
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
A
50.0
pF
/W
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.diode.kr
GI500---GI510
Diode Semiconductor Korea
FIG.2 --MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
5
4
3
S in g le P h a s e
H a lf W a v e 6 0 H
R e s is tiv e o r
In d u c tiv e L o a d
2
Z
1
0
25
50
100
75
125
150
175
PEAK FORWARD CURRENT
AMPERES
6
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT
FIG.1 -- FORWARD DERATING CURVE
80
60
40
TJ =125
8.3ms Single Half
Sine Wave
20
0
2
0
AMBIENT TEMPERATURE,
4
6
10
4 0 60
20
100
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT
MICROAMPERES
100
TJ=25
Pulse Width=300uS
40
20
10
4
AMPERES
INSTANTANEOUS FORWARD CURRENT
CHARACTERISTICS
1
0.4
0.1
0.6 0.8 1.0
1.2 1.4
1.6
1.8 2.0
100
10
TJ= 1 5 0
1
T J= 1 0 0
0.1
T J= 2 5
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
100
60
40
20
10
4
TJ=25
f=1MHz
2
.1
.1
.2
.4
1.0
2
4
10
20 40
REVERSE VOLTAGE,VOLTS
100
TRANSIENT THERMAL IMPEDANCE,
JUNCTION CAPACITANCE,pF
/W
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
100
10
1
0.1
0.01
0.1
1
10
10
PULSE DURATION, SEC
www.diode.kr
Similar pages