CORPORATION ISSUED DATE :2005/09/28 REVISED DATE :2005/12/09B GL158 Description NPN SILICON PLANAR HIGH CURRENT TRANSISTOR The GL158 is designed for general purpose switching and amplifier applications. Features 6 Amps continuous current, up to 20Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 150 60 6 6 20 3 Unit V V V A A W *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics(Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT GL158 Min. 150 60 6 100 100 75 25 - Typ. 200 130 ,unless otherwise stated) Max. Unit Test Conditions V IC=100uA , IE=0 V IC=10mA, IB=0 V IE=100uA ,IC=0 50 nA VCB=120V, IE=0 50 nA VCES=60V 10 nA VEB=6V, IC=0 50 mV IC=100mA, IB=5mA 100 mV IC=1A, IB=50mA 170 mV IC=2A, IB=50mA 375 mV IC=6A, IB=300mA 1.2 V IC=6A, IB=300mA 1.15 V VCE=1V, IC=6A VCE=1V, IC=10mA 300 VCE=1V, IC=2A VCE=1V, IC=5A VCE=1V, IC=10A MHz VCE=10V, IC=100mA, f=50MHz Page: 1/2 CORPORATION Cob ton toff - 45 45 1100 *Measured under pulse condition. Pulse width - ISSUED DATE :2005/09/28 REVISED DATE :2005/12/09B pF VCB=10V, IE=0, f=1MHz ns VCC=10V, IC=1A, IB1=IB2=100mA 300 s, Duty Cycle 2% Spice parameter data is available upon request for this device. Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GL158 Page: 2/2