GSG GLC044 N channel power mosfet for logic driver Datasheet

Gunter Semiconductor GmbH
GLC044
N Channel Power MOSFET FOR LOGIC DRIVER
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dv/dt Rating
* 175℃
℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* RDS(ON) rated at VGS = 5V
* Ease of parallel
Mechanical Data:
D18
Dimension 4.32mm x 5.77mm
400 µm
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
20 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
@Ta=25℃
℃
Symbol
Limit
Unit
Test Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
60
V
VGS=0V, ID=250µΑ
Static Drain-to - Source On-resistance
RDS(ON)
0.028
Ω
VGS=5V, ID=31Α
Continuous Drain current ( in target package)
ID@25℃
50
A
VGS= 5V
Continuous Drain current ( in target package)
ID@100℃
36
A
VGS= 5V
Tj
-55~175
℃
TSTR
-55~175
℃
PD
150
W
Operation Junction Temperature
Storage Temperature
Target Device: IRLZ44
TO-220AB
@Tc=25℃
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