Infineon GMRB6 Giant magneto resistive position sensor Datasheet

Giant Magneto Resistive Position Sensor
GMR B6
Version 2.0
This angle sensor is based on the Giant Magneto Resistive (GMR) technology.
It is outstanding for the huge tolerances it offers to the user in assembly.
2.9 ±0.1
1.1 max
0.6 +0.1
-0.05
5
4
1
2
3
0.35 ±0.15
0.2
0.1 max
+0.1
0.3 -0.05
0.25
M
B
1.2
3
3
4
R1
supply
5 (= 2)
ground
1, 4
GMR bridge access
GPW06957
Dimensions in mm
OHS00429
6, 3
Type
Marking
Ordering Code
GMR B6
B
Q62705-K5004
Data Sheet
A
Directions of internal
magnetization
0.5
0.45
R3
2/5
M
0.9
R4
1
0.20
Reflow soldering
0.8
0.3
Pin Configuration
R2
10˚ max
6
0.08 ... 0.15
2.6 max
10˚ max
A
Applications
• Rotation and linear sensing
with large airgaps
• Angle encoders
• Contactless potentiometers
• Incremental encoders
6
2˚ ... 30˚
1.9
1.3 ±0.1
B
0.1 ±0.3
Features
• GMR sensor in SMD package
• Sensitive to the direction,
not to the intensity of the
magnetic field
• Constant TC of basic
resistance R and magneto
resistance ∆R
1
2000-07-01
GMR B6
The GMR B6 is an angle sensor based on sputtered metallic multilayer technology.
4 resistors are monolithically integrated on 1 chip. They can be used as a fullbridge or,
if 2 external resistors are added, as 2 halfbridges. The outstanding feature of this
magnetic sensor is the fact, that it is sensitive to the orientation of the magnetic field and
not to its intensity as long as the field is in a range between 5 … 15 kA/m. This means,
the signal output of this sensor is independent of the sensor position relative to the
magnet in lateral, axial or rotational direction in the range of several millimeters.
Optimum results are achieved by using magnetic targets like permanent magnets or
magnetic pole-wheels. There is no need for a biasing magnet! Due to the linear change
of both, basic and field dependent part of the resistance vs. temperature, simple and
efficient electronic compensation of TC (R, ∆R) is possible.
AED02956
1
∆R )/2]
RO
N
GMR B6
Bridge Voltage [(VO ∗
S
0.5
V4
0
V1
-0.5
V1- V4
-1
0
90
180
270
Angle
Deg
360
Figure 1
Output Voltage of Half Bridges (V1, V4) and Full Bridge (V4 - V1) as a Function of
the Magnetic Field Orientation
Data Sheet
2
2000-07-01
GMR B6
Maximum Ratings
Parameter
Symbol
Value
Unit
Operating temperature
TA
Tstg
V1
GthC A
Hrot
– 40 … + 150
°C
– 50 … + 150
°C
7
V
>4
mW/K
< 15
kA/m
Storage temperature
Supply voltage
Thermal conductivity
Magnetic field1)
1)
larger fields may reduce the magnetoresistive effect irreversibly
Characteristics (TA = 25 °C)
Parameter
Symbol
Value
Unit
Nominal supply voltage
V1N
R0
∆R/R0
5
V
> 700
Ω
>4
%
Basic resistance
Magnetoresistive effect
Hrot = 5 ... 15 kA/m
Output signal fullbridge
@ V1N = 5 V VOUT
> 200
mV
Offset voltage
@ V1N = 5 V |V0|
<8
mV
Temperature coefficient of
basic resistance
TCR0
+ 0.09 … + 0.12
%/K
Temperature coefficient of
magnetoresistance
TC∆R
– 0.12 … – 0.09
%/K
Temperature coefficient of
magnetoresistive effect
TC∆R/R0
– 0.27 … – 0.23
%/K
Application Hints
The application mode of the GMR position sensor is preferably as a bridge or halfbridge
circuit. In every case this type of circuit compensates for the TC of the resistance value
R0. To compensate for the TC of the GMR effect ∆R/R0, if there is the necessity, is left to
the application circuit and can be done for example with a NIC circuit. When operated
over a complete 360° turn, a total signal of ≈ 20 mV/V is achieved at 25 °C with a
halfbridge. The output signal is doubled to of ≈ 40 mV/V when a fullbridge circuit is used.
In the case of linear position sensing, the electrical circuit remains unchanged.
Data Sheet
3
2000-07-01
GMR B6
Output Voltage Degradation (typical) at
high Temperature Operation
100
%
Magnetoresistive Effect (typical) versus
Temperature ∆R/R0 = f(TA)
AED02953
TA = 105 ˚C
TA = 125 ˚C
%
110
Magnetoresistive Effect (normalized)
99
Output Voltage (normalized)
AED02959
120
98
97
96
100
90
80
70
TA = 150 ˚C
95 2
10
103
Operation Time
60
-50
h 104
-10
30
70
110 ˚C 150
T
Basic Resistance (typical) versus
Temperature R0 = f(TA)
120
AED02954
Resistance (normalized)
%
110
100
90
80
-40 -20 0 20 40 60 80 100 ˚C 150
T
Data Sheet
4
2000-07-01
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